Infineon Technologies IRF6713STRPBF
- Part Number:
- IRF6713STRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071080-IRF6713STRPBF
- Description:
- MOSFET N-CH 25V 22A DIRECTFET-SQ
- Datasheet:
- IRF6713STRPBF
Infineon Technologies IRF6713STRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6713STRPBF.
- Factory Lead Time15 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseDirectFET™ Isometric SQ
- Number of Pins5
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2008
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- JESD-30 CodeR-XBCC-N2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.2W Ta 42W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation42W
- Case ConnectionDRAIN
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3m Ω @ 22A, 10V
- Vgs(th) (Max) @ Id2.4V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds2880pF @ 13V
- Current - Continuous Drain (Id) @ 25°C22A Ta 95A Tc
- Gate Charge (Qg) (Max) @ Vgs32nC @ 4.5V
- Rise Time13ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)6 ns
- Turn-Off Delay Time9.2 ns
- Continuous Drain Current (ID)22A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.003Ohm
- Drain to Source Breakdown Voltage25V
- Avalanche Energy Rating (Eas)34 mJ
- Height506μm
- Length4.826mm
- Width3.95mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRF6713STRPBF Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 34 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2880pF @ 13V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=25V. And this device has 25V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 9.2 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IRF6713STRPBF Features
the avalanche energy rating (Eas) is 34 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 9.2 ns
IRF6713STRPBF Applications
There are a lot of Infineon Technologies
IRF6713STRPBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 34 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2880pF @ 13V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=25V. And this device has 25V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 9.2 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IRF6713STRPBF Features
the avalanche energy rating (Eas) is 34 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 9.2 ns
IRF6713STRPBF Applications
There are a lot of Infineon Technologies
IRF6713STRPBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRF6713STRPBF More Descriptions
Trans MOSFET N-CH 25V 22A 6-Pin Direct-FET SQ T/R - Tape and Reel
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 22 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
N Channel, MOSFET, 25V, 22A, DirectFET SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 22 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
N Channel, MOSFET, 25V, 22A, DirectFET SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance
The three parts on the right have similar specifications to IRF6713STRPBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningRoHS StatusDrain to Source Voltage (Vdss)Supplier Device PackageInput CapacitanceRds On MaxWeightMax Operating TemperatureMin Operating TemperatureNumber of ChannelsElement ConfigurationDrain to Source ResistanceView Compare
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IRF6713STRPBF15 WeeksCopper, Silver, TinSurface MountSurface MountDirectFET™ Isometric SQ5SILICON-40°C~150°C TJTape & Reel (TR)HEXFET®2008Obsolete1 (Unlimited)2EAR99FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMR-XBCC-N21SINGLE WITH BUILT-IN DIODE2.2W Ta 42W TcENHANCEMENT MODE42WDRAIN12 nsN-ChannelSWITCHING3m Ω @ 22A, 10V2.4V @ 50μA2880pF @ 13V22A Ta 95A Tc32nC @ 4.5V13ns4.5V 10V±20V6 ns9.2 ns22A20V0.003Ohm25V34 mJ506μm4.826mm3.95mmNoRoHS Compliant-----------
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---Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---TubeHEXFET®1998Obsolete1 (Unlimited)---MOSFET (Metal Oxide)----3.8W Ta 110W Tc----P-Channel-290m Ω @ 6.6A, 10V4V @ 250μA860pF @ 25V13A Tc66nC @ 10V-10V±20V-----------Non-RoHS Compliant150V---------
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--Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3--55°C~150°C TJTube-2016Obsolete1 (Unlimited)---MOSFET (Metal Oxide)----3.1W Ta 130W Tc----N-Channel-180mOhm @ 11A, 10V4V @ 250μA1300pF @ 25V18A Tc70nC @ 10V-10V±20V--18A--------Non-RoHS Compliant200VI2PAK1.3nF180 mΩ------
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--Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTube-2009Obsolete1 (Unlimited)---MOSFET (Metal Oxide)----3.8W Ta 88W Tc---8.4 nsN-Channel-435mOhm @ 4.8A, 10V4V @ 250μA620pF @ 25V8A Tc34nC @ 10V16ns10V±20V15 ns28 ns8A20V---9.65mm10.67mm4.83mm-ROHS3 Compliant250VI2PAK620pF435 mΩ2.387001g175°C-55°C1Single435mOhm
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