Infineon Technologies IRF6616TRPBF

Name: IRF6616TRPBF
Brand: Infineon Technologies
SKU: 2479848-IRF6616TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF6616TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479848-IRF6616TRPBF

Description:: MOSFET N-CH 40V 19A DIRECTFET

ECAD Model:

Datasheet:: IRF6616TRPBF

Specifications

Infineon Technologies IRF6616TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6616TRPBF.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Number of Pins
5
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2007
JESD-609 Code
e1
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Current Rating
19A
JESD-30 Code
R-XBCC-N3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.8W Ta 89W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
89W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5m Ω @ 19A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3765pF @ 20V
Current - Continuous Drain (Id) @ 25°C
19A Ta 106A Tc
Gate Charge (Qg) (Max) @ Vgs
44nC @ 4.5V
Rise Time
19ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
4.4 ns
Turn-Off Delay Time
21 ns
Continuous Drain Current (ID)
15A
Threshold Voltage
1.8V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
40V
Avalanche Energy Rating (Eas)
36 mJ
Height
508μm
Length
6.35mm
Width
5.0546mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF6616TRPBF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 36 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3765pF @ 20V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 15A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 21 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 1.8V, which means that it will not activate any of its functions when its threshold voltage reaches 1.8V.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

IRF6616TRPBF Features
the avalanche energy rating (Eas) is 36 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 21 ns
a threshold voltage of 1.8V

IRF6616TRPBF Applications
There are a lot of Infineon Technologies
IRF6616TRPBF applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

IRF6616TRPBF More Descriptions

Trans MOSFET N-CH Si 40V 19A 7-Pin Direct-FET MX T/R / MOSFET N-CH 40V 19A DIRECTFET
Single N-Channel 40 V 5 mOhm 29 nC HEXFET® Power Mosfet - DirectFET®
MOSFET, N-CH, 40V, 106A, DIRECTFET MX-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 106A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test ; Available until stocks are exhausted
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:15A; Package/Case:DirectFET MX; Power Dissipation, Pd:89W; Continuous Drain Current - 25 Deg C:19A; Drain Source On Resistance @ 10V:5mohm ;RoHS Compliant: Yes
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number

Product Comparison

The three parts on the right have similar specifications to IRF6616TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Voltage - Rated DC

Technology

Terminal Position

Current Rating

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Additional Feature

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Supplier Device Package

Input Capacitance

Rds On Max

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
IRF6616TRPBF

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

DirectFET™ Isometric MX

5

SILICON

-40°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2007

e1

Active

1 (Unlimited)

3

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

30V

MOSFET (Metal Oxide)

BOTTOM

19A

R-XBCC-N3

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 89W Tc

ENHANCEMENT MODE

89W

DRAIN

15 ns

N-Channel

SWITCHING

5m Ω @ 19A, 10V

2.25V @ 250μA

3765pF @ 20V

19A Ta 106A Tc

44nC @ 4.5V

19ns

4.5V 10V

±20V

4.4 ns

21 ns

15A

1.8V

20V

40V

36 mJ

508μm

6.35mm

5.0546mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF6215STRR

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

-

MOSFET (Metal Oxide)

SINGLE

-

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 110W Tc

ENHANCEMENT MODE

-

DRAIN

-

P-Channel

SWITCHING

290m Ω @ 6.6A, 10V

4V @ 250μA

860pF @ 25V

13A Tc

66nC @ 10V

-

10V

±20V

-

-

-

-

-

-

310 mJ

-

-

-

-

-

Non-RoHS Compliant

-

YES

AVALANCHE RATED, HIGH RELIABILITY

Other Transistors

GULL WING

260

30

Not Qualified

150V

13A

0.29Ohm

44A

150V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF6616TRPBF vs IRF6215STRR
IRF634STRR

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

3.1W Ta 74W Tc

-

-

-

-

N-Channel

-

450mOhm @ 5.1A, 10V

4V @ 250μA

770pF @ 25V

8.1A Tc

41nC @ 10V

-

10V

±20V

-

-

8.1A

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

250V

-

-

-

-

D2PAK

770pF

450 mΩ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF6616TRPBF vs IRF634STRR
IRF634

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

MOSFET (Metal Oxide)

TO-220AB

-

450 mOhm @ 5.1A, 10V

74W (Tc)

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

770pF @ 25V

41nC @ 10V

N-Channel

-

250V

8.1A (Tc)

IRF6616TRPBF vs IRF634

Certification

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IRF6616TRPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF6616TRPBF DISTI #IRF6616TRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 19A 7-Pin Direct-FET MX T RoHS: Compliant	4800	1 $1.7165 10 $1.4958 25 $1.4784 100 $1.2242 250 $1.2111 500 $1.0749 1000 $0.9043 3000 $0.8706
IRF6616TRPBF DISTI #IRF6616TRPBF	Infineon Technologies AG	MOSFET N-CH 40V 19A DIRECTFET RoHS: Compliant	11588	1 $2.4 10 $2.164 100 $1.7386 500 $1.35224 1000 $1.12042
IRF6616TRPBF DISTI #IRF6616TRPBF	Infineon Technologies AG	MOSFET N-CH 40V 19A DIRECTFET RoHS: Compliant	11588	1 $2.4 10 $2.164 100 $1.7386 500 $1.35224 1000 $1.12042
IRF6616TRPBF DISTI #IRF6616TRPBF	Infineon Technologies AG	MOSFET N-CH 40V 19A DIRECTFET RoHS: Compliant	9600	4800 $0.97526
IRF6616TRPBF DISTI #IRF6616TRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 19A 7-Pin Direct-FET MX T RoHS: Compliant	14400	4800 $0.8304
IRF6616TRPBF DISTI #IRF6616TRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 19A 7-Pin Direct-FET MX T RoHS: Compliant	4800	7 $1.7129 10 $1.4929 25 $1.4756 100 $1.2223 250 $1.2092 500 $1.0733 1000 $0.9031 3000 $0.8627
IRF6616TRPBF DISTI #IRF6616TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 19A 7-Pin Direct-FET MX T/R RoHS: Compliant	4800	4800 $0.9549 9600 $0.9529 19200 $0.9499 28800 $0.9479 48000 $0.9459
IRF6616TRPBF DISTI #IRF6616TRPBF	Infineon Technologies AG	MOSFET, N-CH, 40V, 106A, DIRECTFET MX-7, Transist	4379	1 $2.01 10 $1.71 25 $1.6 50 $1.48 100 $1.37 250 $1.29 500 $1.2 1000 $0.989
IRF6616TRPBF DISTI #IRF6616TRPBF	Infineon Technologies AG	MOSFET, 40V, 106A, 5.0 MOHM, 29 NC QG, MED CA RoHS: Compliant	0	4800 $1.278 9600 $1.252 24000 $1.214
IRF6616TRPBF DISTI #IRF6616TRPBF	Infineon Technologies AG	MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs RoHS: Compliant	10597	1 $2.01 10 $1.71 100 $1.37 500 $1.2 1000 $0.989 2500 $0.921 4800 $0.887
IRF6616TRPBF DISTI #IRF6616TRPBF	Infineon Technologies AG	Single N-Channel 40 V 5 mOhm 29 nC HEXFET Power Mo RoHS: Compliant	4800	4800 $1.05
IRF6616TRPBF DISTI #IRF6616TRPBF	Infineon Technologies AG	MOSFET, N-CH, 40V, 106A, DIRECTFET MX-7 RoHS: Compliant	4469	5 $1.41 25 $1.3 100 $1.04 250 $0.979 500 $0.917
IRF6616TRPBF DISTI #IRF6616TRPBF	Infineon Technologies AG	MOSFET, N-CH, 40V, 106A, DIRECTFET MX-7 RoHS: Compliant	4379	1 $3.19 10 $2.71 100 $2.17
IRF6616TRPBF DISTI #IRF6616TRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 19A 7-Pin Direct-FET MX T RoHS: Compliant	14400	4800 $1.04
IRF6616TRPBF DISTI #IRF6616TRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 19A 7-Pin Direct-FET MX T RoHS: Compliant	4800	10 $1.4929 25 $1.4756 100 $1.2223 250 $1.2092

IRF6616~~(5)~~
IRF661~~(43)~~
IRF66~~(65)~~
IRF6~~(67)~~
IRF~~(69)~~

Infineon Technologies IRF6616TRPBF

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