Infineon Technologies IRF6609TRPBF

IRF6609TRPBF Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 240 mJ.The maximum input capacitance of this device is 6290pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 150mA.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 26 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 24 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

IRF6609TRPBF Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 150mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 26 ns


IRF6609TRPBF Applications
There are a lot of Infineon Technologies
IRF6609TRPBF applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,