Infineon Technologies IRF6604TR1
- Part Number:
- IRF6604TR1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853966-IRF6604TR1
- Description:
- MOSFET N-CH 30V 12A DIRECTFET
- Datasheet:
- IRF6604
Infineon Technologies IRF6604TR1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6604TR1.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseDirectFET™ Isometric MQ
- Number of Pins7
- Supplier Device PackageDIRECTFET™ MQ
- Operating Temperature-40°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2005
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Resistance11.5mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max2.3W Ta 42W Tc
- Power Dissipation2.3W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs11.5mOhm @ 12A, 7V
- Vgs(th) (Max) @ Id2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2270pF @ 15V
- Current - Continuous Drain (Id) @ 25°C12A Ta 49A Tc
- Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 7V
- Vgs (Max)±12V
- Turn-Off Delay Time18 ns
- Reverse Recovery Time31 ns
- Continuous Drain Current (ID)12A
- Threshold Voltage2.1V
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage30V
- Dual Supply Voltage30V
- Input Capacitance2.27nF
- Drain to Source Resistance11.5Ohm
- Rds On Max11.5 mΩ
- Nominal Vgs2.1 V
- Width5.05mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRF6604TR1 Overview
A device's maximum input capacitance is 2270pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 12A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 18 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 11.5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2.1V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 7V) to reduce its overall power consumption.
IRF6604TR1 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 11.5Ohm
a threshold voltage of 2.1V
a 30V drain to source voltage (Vdss)
IRF6604TR1 Applications
There are a lot of Infineon Technologies
IRF6604TR1 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 2270pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 12A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 18 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 11.5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2.1V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 7V) to reduce its overall power consumption.
IRF6604TR1 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 11.5Ohm
a threshold voltage of 2.1V
a 30V drain to source voltage (Vdss)
IRF6604TR1 Applications
There are a lot of Infineon Technologies
IRF6604TR1 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF6604TR1 More Descriptions
Trans MOSFET N-CH Si 30V 12A 7-Pin Direct-FET MQ T/R / MOSFET N-CH 30V 12A DIRECTFET
MOSFET N-CH 30V 12A DIRECTFET
MOSFET, N, DIRECTFET, MQ; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:59A; Resistance, Rds On:11.5mohm; Voltage, Vgs Rds on Measurement:7V; Voltage, Vgs th Typ:2.1V; Case Style:MQ; Termination Type:SMD; Current, Idm Pulse:92A; External Depth:6.35mm; External Length / Height:0.7mm; IC Package (Case style):MQ; No. of Pins:7; Power Dissipation:2.3W; Power, Pd:2.3W; Resistance, Rds on Max:11.5mohm; SMD Marking:6604; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-40°C; Time, trr Typ:31ns; Transistors, No. of:1; Typ Capacitance Ciss:2270pF; Typ Charge Qrr @ Tj = 25°C:28nC; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs Max:12V; Voltage, Vgs th Max:3V; Voltage, Vgs th Min:1V; Width, External:5.05mm
MOSFET N-CH 30V 12A DIRECTFET
MOSFET, N, DIRECTFET, MQ; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:59A; Resistance, Rds On:11.5mohm; Voltage, Vgs Rds on Measurement:7V; Voltage, Vgs th Typ:2.1V; Case Style:MQ; Termination Type:SMD; Current, Idm Pulse:92A; External Depth:6.35mm; External Length / Height:0.7mm; IC Package (Case style):MQ; No. of Pins:7; Power Dissipation:2.3W; Power, Pd:2.3W; Resistance, Rds on Max:11.5mohm; SMD Marking:6604; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-40°C; Time, trr Typ:31ns; Transistors, No. of:1; Typ Capacitance Ciss:2270pF; Typ Charge Qrr @ Tj = 25°C:28nC; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs Max:12V; Voltage, Vgs th Max:3V; Voltage, Vgs th Min:1V; Width, External:5.05mm
The three parts on the right have similar specifications to IRF6604TR1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsPower Dissipation-MaxPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeReverse Recovery TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)WeightNumber of ChannelsElement ConfigurationTurn On Delay TimeRise TimeFall Time (Typ)HeightLengthView Compare
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IRF6604TR1Surface MountSurface MountDirectFET™ Isometric MQ7DIRECTFET™ MQ-40°C~150°C TJTape & Reel (TR)HEXFET®2005Obsolete3 (168 Hours)11.5mOhm150°C-40°CMOSFET (Metal Oxide)12.3W Ta 42W Tc2.3WN-Channel11.5mOhm @ 12A, 7V2.1V @ 250μA2270pF @ 15V12A Ta 49A Tc26nC @ 4.5V30V4.5V 7V±12V18 ns31 ns12A2.1V12V30V30V2.27nF11.5Ohm11.5 mΩ2.1 V5.05mmNo SVHCNoRoHS CompliantLead Free--------------------------------
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)---MOSFET (Metal Oxide)13.8W Ta 110W Tc-P-Channel290m Ω @ 6.6A, 10V4V @ 250μA860pF @ 25V13A Tc66nC @ 10V150V10V±20V--------------Non-RoHS Compliant-YESSILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYOther TransistorsSINGLEGULL WING26030R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING13A0.29Ohm44A150V310 mJ--------
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-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-TO-262-55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-82W Tc-N-Channel300mOhm @ 5.4A, 10V4V @ 250μA575pF @ 25V9.3A Tc35nC @ 10V200V10V±20V--------------Non-RoHS Compliant--------------------------------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK-55°C~175°C TJTube-2009Obsolete1 (Unlimited)-175°C-55°CMOSFET (Metal Oxide)-3.8W Ta 88W Tc-N-Channel435mOhm @ 4.8A, 10V4V @ 250μA620pF @ 25V8A Tc34nC @ 10V250V10V±20V28 ns-8A-20V--620pF435mOhm435 mΩ-9.65mm--ROHS3 Compliant------------------------1.437803g1Single8.4 ns16ns15 ns4.83mm10.67mm
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