IRF6604TR1

Infineon Technologies IRF6604TR1

Part Number:
IRF6604TR1
Manufacturer:
Infineon Technologies
Ventron No:
2853966-IRF6604TR1
Description:
MOSFET N-CH 30V 12A DIRECTFET
ECAD Model:
Datasheet:
IRF6604

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Specifications
Infineon Technologies IRF6604TR1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6604TR1.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    DirectFET™ Isometric MQ
  • Number of Pins
    7
  • Supplier Device Package
    DIRECTFET™ MQ
  • Operating Temperature
    -40°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2005
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Resistance
    11.5mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -40°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    2.3W Ta 42W Tc
  • Power Dissipation
    2.3W
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    11.5mOhm @ 12A, 7V
  • Vgs(th) (Max) @ Id
    2.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2270pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    12A Ta 49A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    26nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 7V
  • Vgs (Max)
    ±12V
  • Turn-Off Delay Time
    18 ns
  • Reverse Recovery Time
    31 ns
  • Continuous Drain Current (ID)
    12A
  • Threshold Voltage
    2.1V
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • Input Capacitance
    2.27nF
  • Drain to Source Resistance
    11.5Ohm
  • Rds On Max
    11.5 mΩ
  • Nominal Vgs
    2.1 V
  • Width
    5.05mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRF6604TR1 Overview
A device's maximum input capacitance is 2270pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 12A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 18 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 11.5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2.1V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 7V) to reduce its overall power consumption.

IRF6604TR1 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 11.5Ohm
a threshold voltage of 2.1V
a 30V drain to source voltage (Vdss)


IRF6604TR1 Applications
There are a lot of Infineon Technologies
IRF6604TR1 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF6604TR1 More Descriptions
Trans MOSFET N-CH Si 30V 12A 7-Pin Direct-FET MQ T/R / MOSFET N-CH 30V 12A DIRECTFET
MOSFET N-CH 30V 12A DIRECTFET
MOSFET, N, DIRECTFET, MQ; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:59A; Resistance, Rds On:11.5mohm; Voltage, Vgs Rds on Measurement:7V; Voltage, Vgs th Typ:2.1V; Case Style:MQ; Termination Type:SMD; Current, Idm Pulse:92A; External Depth:6.35mm; External Length / Height:0.7mm; IC Package (Case style):MQ; No. of Pins:7; Power Dissipation:2.3W; Power, Pd:2.3W; Resistance, Rds on Max:11.5mohm; SMD Marking:6604; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-40°C; Time, trr Typ:31ns; Transistors, No. of:1; Typ Capacitance Ciss:2270pF; Typ Charge Qrr @ Tj = 25°C:28nC; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs Max:12V; Voltage, Vgs th Max:3V; Voltage, Vgs th Min:1V; Width, External:5.05mm
Product Comparison
The three parts on the right have similar specifications to IRF6604TR1.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Power Dissipation-Max
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Reverse Recovery Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Weight
    Number of Channels
    Element Configuration
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Height
    Length
    View Compare
  • IRF6604TR1
    IRF6604TR1
    Surface Mount
    Surface Mount
    DirectFET™ Isometric MQ
    7
    DIRECTFET™ MQ
    -40°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2005
    Obsolete
    3 (168 Hours)
    11.5mOhm
    150°C
    -40°C
    MOSFET (Metal Oxide)
    1
    2.3W Ta 42W Tc
    2.3W
    N-Channel
    11.5mOhm @ 12A, 7V
    2.1V @ 250μA
    2270pF @ 15V
    12A Ta 49A Tc
    26nC @ 4.5V
    30V
    4.5V 7V
    ±12V
    18 ns
    31 ns
    12A
    2.1V
    12V
    30V
    30V
    2.27nF
    11.5Ohm
    11.5 mΩ
    2.1 V
    5.05mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF6215STRR
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    3.8W Ta 110W Tc
    -
    P-Channel
    290m Ω @ 6.6A, 10V
    4V @ 250μA
    860pF @ 25V
    13A Tc
    66nC @ 10V
    150V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    Other Transistors
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    13A
    0.29Ohm
    44A
    150V
    310 mJ
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF630NL
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    TO-262
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    82W Tc
    -
    N-Channel
    300mOhm @ 5.4A, 10V
    4V @ 250μA
    575pF @ 25V
    9.3A Tc
    35nC @ 10V
    200V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF634NSPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    -55°C~175°C TJ
    Tube
    -
    2009
    Obsolete
    1 (Unlimited)
    -
    175°C
    -55°C
    MOSFET (Metal Oxide)
    -
    3.8W Ta 88W Tc
    -
    N-Channel
    435mOhm @ 4.8A, 10V
    4V @ 250μA
    620pF @ 25V
    8A Tc
    34nC @ 10V
    250V
    10V
    ±20V
    28 ns
    -
    8A
    -
    20V
    -
    -
    620pF
    435mOhm
    435 mΩ
    -
    9.65mm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1.437803g
    1
    Single
    8.4 ns
    16ns
    15 ns
    4.83mm
    10.67mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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