Vishay Siliconix IRF644PBF
- Part Number:
- IRF644PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2479850-IRF644PBF
- Description:
- MOSFET N-CH 250V 14A TO-220AB
- Datasheet:
- IRF644PBF
Vishay Siliconix IRF644PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF644PBF.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance280mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC250V
- TechnologyMOSFET (Metal Oxide)
- Current Rating14A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Power Dissipation125W
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs280mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
- Rise Time24ns
- Drain to Source Voltage (Vdss)250V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)49 ns
- Turn-Off Delay Time53 ns
- Continuous Drain Current (ID)14A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage250V
- Input Capacitance1.3nF
- Recovery Time500 ns
- Drain to Source Resistance280mOhm
- Rds On Max280 mΩ
- Nominal Vgs4 V
- Height9.01mm
- Length10.41mm
- Width4.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF644PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 14A.With a drain-source breakdown voltage of 250V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 250V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 53 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 280mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF644PBF Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 280mOhm
a threshold voltage of 4V
a 250V drain to source voltage (Vdss)
IRF644PBF Applications
There are a lot of Vishay Siliconix
IRF644PBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 14A.With a drain-source breakdown voltage of 250V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 250V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 53 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 280mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF644PBF Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 280mOhm
a threshold voltage of 4V
a 250V drain to source voltage (Vdss)
IRF644PBF Applications
There are a lot of Vishay Siliconix
IRF644PBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF644PBF More Descriptions
Single N-Channel 250 V 0.28 Ohms Flange Mount Power Mosfet - TO-220AB
Trans MOSFET N-CH Si 250V 14A 3-Pin(3 Tab) TO-220AB / MOSFET N-CH 250V 14A TO-220AB
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 250V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:250V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Package / Case:TO-220AB; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:56A; Termination Type:Through Hole; Voltage Vds:250V; Voltage Vds Typ:250V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Trans MOSFET N-CH Si 250V 14A 3-Pin(3 Tab) TO-220AB / MOSFET N-CH 250V 14A TO-220AB
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 250V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:250V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Package / Case:TO-220AB; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:56A; Termination Type:Through Hole; Voltage Vds:250V; Voltage Vds Typ:250V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRF644PBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesView Compare
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IRF644PBF8 WeeksTinThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2008Active1 (Unlimited)280mOhm150°C-55°C250VMOSFET (Metal Oxide)14A11125W TcSingle125W11 nsN-Channel280mOhm @ 8.4A, 10V4V @ 250μA1300pF @ 25V14A Tc68nC @ 10V24ns250V10V±20V49 ns53 ns14A4V20V250V1.3nF500 ns280mOhm280 mΩ4 V9.01mm10.41mm4.7mmUnknownNoROHS3 CompliantLead Free--
-
---Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-TO-262--55°C~175°C TJTube2004Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---82W Tc---N-Channel300mOhm @ 5.4A, 10V4V @ 250μA575pF @ 25V9.3A Tc35nC @ 10V-200V10V±20V----------------Non-RoHS Compliant-HEXFET®
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--Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3I2PAK--55°C~150°C TJTube2016Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---3.1W Ta 130W Tc---N-Channel180mOhm @ 11A, 10V4V @ 250μA1300pF @ 25V18A Tc70nC @ 10V-200V10V±20V--18A---1.3nF--180 mΩ------Non-RoHS Compliant--
-
--Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-I2PAK2.387001g-55°C~175°C TJTube2009Obsolete1 (Unlimited)-175°C-55°C-MOSFET (Metal Oxide)--13.8W Ta 88W TcSingle-8.4 nsN-Channel435mOhm @ 4.8A, 10V4V @ 250μA620pF @ 25V8A Tc34nC @ 10V16ns250V10V±20V15 ns28 ns8A-20V-620pF-435mOhm435 mΩ-9.65mm10.67mm4.83mm--ROHS3 Compliant--
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