IRF644PBF

Vishay Siliconix IRF644PBF

Part Number:
IRF644PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2479850-IRF644PBF
Description:
MOSFET N-CH 250V 14A TO-220AB
ECAD Model:
Datasheet:
IRF644PBF

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Specifications
Vishay Siliconix IRF644PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF644PBF.
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    280mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    250V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    14A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    125W Tc
  • Element Configuration
    Single
  • Power Dissipation
    125W
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    280mOhm @ 8.4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    14A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    68nC @ 10V
  • Rise Time
    24ns
  • Drain to Source Voltage (Vdss)
    250V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    49 ns
  • Turn-Off Delay Time
    53 ns
  • Continuous Drain Current (ID)
    14A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    250V
  • Input Capacitance
    1.3nF
  • Recovery Time
    500 ns
  • Drain to Source Resistance
    280mOhm
  • Rds On Max
    280 mΩ
  • Nominal Vgs
    4 V
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF644PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1300pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 14A.With a drain-source breakdown voltage of 250V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 250V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 53 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 280mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.

IRF644PBF Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 280mOhm
a threshold voltage of 4V
a 250V drain to source voltage (Vdss)


IRF644PBF Applications
There are a lot of Vishay Siliconix
IRF644PBF applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF644PBF More Descriptions
Single N-Channel 250 V 0.28 Ohms Flange Mount Power Mosfet - TO-220AB
Trans MOSFET N-CH Si 250V 14A 3-Pin(3 Tab) TO-220AB / MOSFET N-CH 250V 14A TO-220AB
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 250V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:250V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Package / Case:TO-220AB; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:56A; Termination Type:Through Hole; Voltage Vds:250V; Voltage Vds Typ:250V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRF644PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    View Compare
  • IRF644PBF
    IRF644PBF
    8 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2008
    Active
    1 (Unlimited)
    280mOhm
    150°C
    -55°C
    250V
    MOSFET (Metal Oxide)
    14A
    1
    1
    125W Tc
    Single
    125W
    11 ns
    N-Channel
    280mOhm @ 8.4A, 10V
    4V @ 250μA
    1300pF @ 25V
    14A Tc
    68nC @ 10V
    24ns
    250V
    10V
    ±20V
    49 ns
    53 ns
    14A
    4V
    20V
    250V
    1.3nF
    500 ns
    280mOhm
    280 mΩ
    4 V
    9.01mm
    10.41mm
    4.7mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
  • IRF630NL
    -
    -
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    TO-262
    -
    -55°C~175°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    82W Tc
    -
    -
    -
    N-Channel
    300mOhm @ 5.4A, 10V
    4V @ 250μA
    575pF @ 25V
    9.3A Tc
    35nC @ 10V
    -
    200V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
  • IRF640L
    -
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    I2PAK
    -
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    3.1W Ta 130W Tc
    -
    -
    -
    N-Channel
    180mOhm @ 11A, 10V
    4V @ 250μA
    1300pF @ 25V
    18A Tc
    70nC @ 10V
    -
    200V
    10V
    ±20V
    -
    -
    18A
    -
    -
    -
    1.3nF
    -
    -
    180 mΩ
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
  • IRF634NLPBF
    -
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    I2PAK
    2.387001g
    -55°C~175°C TJ
    Tube
    2009
    Obsolete
    1 (Unlimited)
    -
    175°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    -
    1
    3.8W Ta 88W Tc
    Single
    -
    8.4 ns
    N-Channel
    435mOhm @ 4.8A, 10V
    4V @ 250μA
    620pF @ 25V
    8A Tc
    34nC @ 10V
    16ns
    250V
    10V
    ±20V
    15 ns
    28 ns
    8A
    -
    20V
    -
    620pF
    -
    435mOhm
    435 mΩ
    -
    9.65mm
    10.67mm
    4.83mm
    -
    -
    ROHS3 Compliant
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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