Vishay Siliconix IRF640S
- Part Number:
- IRF640S
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2851374-IRF640S
- Description:
- MOSFET N-CH 200V 18A D2PAK
- Datasheet:
- IRF640S
Vishay Siliconix IRF640S technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF640S.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Supplier Device PackageD2PAK
- Weight2.240009g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance180mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Current Rating18A
- Number of Channels1
- Power Dissipation-Max3.1W Ta 130W Tc
- Element ConfigurationSingle
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C18A Tc
- Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
- Rise Time51ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)36 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)18A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage200V
- Input Capacitance1.3nF
- Drain to Source Resistance180mOhm
- Rds On Max180 mΩ
- Height4.83mm
- Length10.67mm
- Width9.65mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF640S Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 18A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.This device has a drain-to-source resistance of 180mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF640S Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 180mOhm
a 200V drain to source voltage (Vdss)
IRF640S Applications
There are a lot of Vishay Siliconix
IRF640S applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 18A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.This device has a drain-to-source resistance of 180mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF640S Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 180mOhm
a 200V drain to source voltage (Vdss)
IRF640S Applications
There are a lot of Vishay Siliconix
IRF640S applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF640S More Descriptions
N-channel TrenchMOS transistor | MOSFET N-CH 200V 18A D2PAK
TRANS MOSFET N-CH 200V 18A 3PIN D2PAK
TRANS MOSFET N-CH 200V 18A 3PIN D2PAK
The three parts on the right have similar specifications to IRF640S.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)SubcategoryNumber of PinsView Compare
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IRF640SSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK2.240009g-55°C~150°C TJTube2016Obsolete1 (Unlimited)180mOhm150°C-55°C200VMOSFET (Metal Oxide)18A13.1W Ta 130W TcSingle14 nsN-Channel180mOhm @ 11A, 10V4V @ 250μA1300pF @ 25V18A Tc70nC @ 10V51ns200V10V±20V36 ns45 ns18A20V200V1.3nF180mOhm180 mΩ4.83mm10.67mm9.65mmNon-RoHS CompliantContains Lead----------------------------
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTube1998Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--3.8W Ta 110W Tc--P-Channel290m Ω @ 6.6A, 10V4V @ 250μA860pF @ 25V13A Tc66nC @ 10V-150V10V±20V-----------Non-RoHS Compliant-YESSILICONHEXFET®e02EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, HIGH RELIABILITY8541.29.00.95SINGLEGULL WING22530R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING13A0.29Ohm44A150V310 mJ--
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)1998Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--3.8W Ta 110W Tc--P-Channel290m Ω @ 6.6A, 10V4V @ 250μA860pF @ 25V13A Tc66nC @ 10V-150V10V±20V-----------Non-RoHS Compliant-YESSILICONHEXFET®e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY-SINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING13A0.29Ohm44A150V310 mJOther Transistors-
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK1.437803g-55°C~175°C TJTube2009Obsolete1 (Unlimited)-175°C-55°C-MOSFET (Metal Oxide)-13.8W Ta 88W TcSingle8.4 nsN-Channel435mOhm @ 4.8A, 10V4V @ 250μA620pF @ 25V8A Tc34nC @ 10V16ns250V10V±20V15 ns28 ns8A20V-620pF435mOhm435 mΩ4.83mm10.67mm9.65mmROHS3 Compliant---------------------------3
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