IRF640PBF

Vishay Siliconix IRF640PBF

Part Number:
IRF640PBF
Manufacturer:
Vishay Siliconix
Ventron No:
3554117-IRF640PBF
Description:
MOSFET N-CH 200V 18A TO-220AB
ECAD Model:
Datasheet:
IRF640PBF

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Specifications
Vishay Siliconix IRF640PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF640PBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    2014
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    180mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    200V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    18A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    125W Tc
  • Element Configuration
    Single
  • Power Dissipation
    125W
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    180mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    18A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    70nC @ 10V
  • Rise Time
    51ns
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    36 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    18A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    200V
  • Input Capacitance
    1.3nF
  • Drain to Source Resistance
    180mOhm
  • Rds On Max
    180 mΩ
  • Nominal Vgs
    2 V
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF640PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 45 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 180mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRF640PBF Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 180mOhm
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)


IRF640PBF Applications
There are a lot of Vishay Siliconix
IRF640PBF applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRF640PBF More Descriptions
Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220-3
Trans MOSFET N-CH 200V 18A 3-Pin (3 Tab) TO-220AB
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 200V, 18A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Msl:- Rohs Compliant: Yes |Vishay IRF640PBF.
MOSFET TRANSISTOR N CH; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Package / Case:TO-220; Power Dissipation Pd:125W; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRF640PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRF640PBF
    IRF640PBF
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Bulk
    2014
    Active
    1 (Unlimited)
    180mOhm
    150°C
    -55°C
    200V
    MOSFET (Metal Oxide)
    18A
    1
    1
    125W Tc
    Single
    125W
    14 ns
    N-Channel
    180mOhm @ 11A, 10V
    4V @ 250μA
    1300pF @ 25V
    18A Tc
    70nC @ 10V
    51ns
    200V
    10V
    ±20V
    36 ns
    45 ns
    18A
    4V
    20V
    200V
    1.3nF
    180mOhm
    180 mΩ
    2 V
    9.01mm
    10.41mm
    4.7mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF6215STRR
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    3.8W Ta 110W Tc
    -
    -
    -
    P-Channel
    290m Ω @ 6.6A, 10V
    4V @ 250μA
    860pF @ 25V
    13A Tc
    66nC @ 10V
    -
    150V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    HEXFET®
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    Other Transistors
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    13A
    0.29Ohm
    44A
    150V
    310 mJ
  • IRF634NLPBF
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    I2PAK
    2.387001g
    -55°C~175°C TJ
    Tube
    2009
    Obsolete
    1 (Unlimited)
    -
    175°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    -
    1
    3.8W Ta 88W Tc
    Single
    -
    8.4 ns
    N-Channel
    435mOhm @ 4.8A, 10V
    4V @ 250μA
    620pF @ 25V
    8A Tc
    34nC @ 10V
    16ns
    250V
    10V
    ±20V
    15 ns
    28 ns
    8A
    -
    20V
    -
    620pF
    435mOhm
    435 mΩ
    -
    9.65mm
    10.67mm
    4.83mm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF634NSPBF
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~175°C TJ
    Tube
    2009
    Obsolete
    1 (Unlimited)
    -
    175°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    -
    1
    3.8W Ta 88W Tc
    Single
    -
    8.4 ns
    N-Channel
    435mOhm @ 4.8A, 10V
    4V @ 250μA
    620pF @ 25V
    8A Tc
    34nC @ 10V
    16ns
    250V
    10V
    ±20V
    15 ns
    28 ns
    8A
    -
    20V
    -
    620pF
    435mOhm
    435 mΩ
    -
    4.83mm
    10.67mm
    9.65mm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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