Infineon Technologies IRF640NSTRLPBF

Name: IRF640NSTRLPBF
Brand: Infineon Technologies
SKU: 2848658-IRF640NSTRLPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF640NSTRLPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2848658-IRF640NSTRLPBF

Description:: MOSFET N-CH 200V 18A D2PAK

ECAD Model:

Datasheet:: IRF640NSTRLPBF

Specifications

Infineon Technologies IRF640NSTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF640NSTRLPBF.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
150mOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
18A
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
150m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C
18A Tc
Gate Charge (Qg) (Max) @ Vgs
67nC @ 10V
Rise Time
19ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
5.5 ns
Turn-Off Delay Time
23 ns
Continuous Drain Current (ID)
18A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
72A
Dual Supply Voltage
200V
Avalanche Energy Rating (Eas)
247 mJ
Recovery Time
251 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4 V
Height
5.084mm
Length
10.668mm
Width
9.65mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRF640NSTRLPBF Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 247 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1160pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 18A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 23 ns.Peak drain current for this device is 72A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

IRF640NSTRLPBF Features
the avalanche energy rating (Eas) is 247 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 72A.
a threshold voltage of 4V

IRF640NSTRLPBF Applications
There are a lot of Infineon Technologies
IRF640NSTRLPBF applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

IRF640NSTRLPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS /-20V;-55
Trans MOSFET N-CH Si 200V 18A 3-Pin(2 Tab) D2PAK T/R / MOSFET N-CH 200V 18A D2PAK
Single N-Channel 200V 0.15 Ohm 67 nC HEXFET® Power Mosfet - D2PAK
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N CH, 200V, 18A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 150W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 150 / Gate-Source Voltage V = 20 / Fall Time ns = 5.5 / Rise Time ns = 19 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 150

Product Comparison

The three parts on the right have similar specifications to IRF640NSTRLPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
IRF640NSTRLPBF

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

e3

Active

1 (Unlimited)

2

SMD/SMT

EAR99

150mOhm

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

200V

MOSFET (Metal Oxide)

GULL WING

260

18A

30

R-PSSO-G2

1

1

150W Tc

Single

ENHANCEMENT MODE

150W

DRAIN

10 ns

N-Channel

SWITCHING

150m Ω @ 11A, 10V

4V @ 250μA

1160pF @ 25V

18A Tc

67nC @ 10V

19ns

10V

±20V

5.5 ns

23 ns

18A

4V

20V

200V

72A

200V

247 mJ

251 ns

175°C

4 V

5.084mm

10.668mm

9.65mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF634NLPBF

Vishay Siliconix

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

-

2009

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

3.8W Ta 88W Tc

Single

-

-

-

8.4 ns

N-Channel

-

435mOhm @ 4.8A, 10V

4V @ 250μA

620pF @ 25V

8A Tc

34nC @ 10V

16ns

10V

±20V

15 ns

28 ns

8A

-

20V

-

-

-

-

-

-

-

9.65mm

10.67mm

4.83mm

-

-

ROHS3 Compliant

-

I2PAK

2.387001g

175°C

-55°C

250V

620pF

435mOhm

435 mΩ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF640NSTRLPBF vs IRF634NLPBF
IRF634NSPBF

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~175°C TJ

Tube

-

2009

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

3.8W Ta 88W Tc

Single

-

-

-

8.4 ns

N-Channel

-

435mOhm @ 4.8A, 10V

4V @ 250μA

620pF @ 25V

8A Tc

34nC @ 10V

16ns

10V

±20V

15 ns

28 ns

8A

-

20V

-

-

-

-

-

-

-

4.83mm

10.67mm

9.65mm

-

-

ROHS3 Compliant

-

D2PAK

1.437803g

175°C

-55°C

250V

620pF

435mOhm

435 mΩ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF640NSTRLPBF vs IRF634NSPBF
IRF634

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

MOSFET (Metal Oxide)

TO-220AB

-

450 mOhm @ 5.1A, 10V

74W (Tc)

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

770pF @ 25V

41nC @ 10V

N-Channel

-

250V

8.1A (Tc)

IRF640NSTRLPBF vs IRF634

Certification

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IRF634

Vishay Siliconix

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IRF640NSTRLPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	314	1 $1.1117 10 $0.9866 25 $0.9824 100 $0.8026 250 $0.6102
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 200V 18A D2PAK RoHS: Compliant	4651	1 $1.71 10 $1.515 100 $1.1972
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 200V 18A D2PAK RoHS: Compliant	4651	1 $1.71 10 $1.515 100 $1.1972
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 200V 18A D2PAK RoHS: Compliant	4000	800 $0.78755
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	1600	800 $0.477 1600 $0.4597 3200 $0.4425 4800 $0.4281 8000 $0.4204
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	676	21 $1.2175
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	314	14 $0.9866 25 $0.9824 100 $0.8026 250 $0.6102
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 200V 18A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	105600	800 $0.5599 1600 $0.4579 3200 $0.4199 4800 $0.3869 8000 $0.3599
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 200V 18A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	800 $0.4969 1600 $0.4789 3200 $0.4609 4800 $0.4459 8000 $0.4379
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 200V 18A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	MOSFET Transistor, N Channel, 18 A, 200 V, 0.15 oh	3754	1 $1.59 10 $1.38 25 $1.28 50 $1.18 100 $1.07 250 $1.02 500 $0.959
IRF640NSTRLPBF. DISTI #	Infineon Technologies AG	Transistor Polarity:N Channel, Continuous Drain C	0
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 0.15Oh RoHS: Compliant	326	1 $2.465 10 $2.175 100 $1.896 500 $1.643 1000 $1.45
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 200V 18A 150mOhm 44.7nC RoHS: Compliant	2623	1 $1.42 10 $1.21 100 $0.928 500 $0.82 800 $0.647 2400 $0.574
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	Single N-Channel 200V 0.15 Ohm 67 nC HEXFET Power RoHS: Compliant	800	800 $0.515 1600 $0.495
IRF640NSTRLPBF DISTI #	International Rectifier	18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFE	124	1 $1.5 18 $0.9 68 $0.75
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	HEXFET N-CH MOSFET 18A 200V D2PAK, PK	330	10 $0.814 100 $0.594 200 $0.564 400 $0.534 800 $0.414
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	HEXFET N-CH MOSFET 18A 200V D2PAK, RL	1020	100 $0.594 200 $0.564 400 $0.534 800 $0.414
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 200V, 18A, 150	811	1 $0.7412 3 $0.6264 10 $0.5285 100 $0.4774
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	N-Ch 200V 18A 150W 0,15R DPak RoHS: Compliant	950	10 $0.658 50 $0.418 200 $0.358 500 $0.345
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	N-CH 200V 18A 150mOhm D2PAK RoHS: Compliant	800	800 $0.6442 1600 $0.6073 3200 $0.5705 4800 $0.5153 8000 $0.4969
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	200V,150m,18A,N-Channel Power MOSFET	500	1 $0.96 100 $0.8 500 $0.71 1000 $0.69
IRF640NSTRLPBF DISTI #	INF	RoHS: Compliant	800	800 $0.8182
IRF640NSTRLPBF DISTI #	INFINEON/IR	D2-PAK (TO-263) RoHS: Compliant	6336	1600 $0.4714 6336 $0.44
IRF640NSTRLPBF DISTI #		INSTOCK	1600
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	INSTOCK	602
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 200V, 18A, TO-263AB-3 RoHS: Compliant	554	1 $2.25 10 $1.92 100 $1.47 500 $1.31 800 $1.03 2400 $0.909
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 200V, 18A, TO-263AB-3 RoHS: Compliant	0	1 $2.25 10 $1.92 100 $1.47 500 $1.31 800 $1.03 2400 $0.909
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	839	1 $2.05 10 $1.04 50 $0.857 100 $0.725 200 $0.639
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	676	5 $0.974 10 $0.789 50 $0.531 100 $0.49
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 18A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	314	10 $0.9866 25 $0.9824 100 $0.8026 250 $0.6102
IRF640NSTRLPBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 200V, 18A, TO-263AB-3 RoHS: Compliant	3854	5 $0.83 25 $0.703 100 $0.575 250 $0.545 500 $0.422

IRF640N~~(16)~~
IRF640~~(39)~~
IRF64~~(68)~~
IRF6~~(67)~~
IRF~~(69)~~

Infineon Technologies IRF640NSTRLPBF

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