STMicroelectronics IRF640

Name: IRF640
Brand: STMicroelectronics
SKU: 2488524-IRF640
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF640

Manufacturer:: STMicroelectronics

Ventron No:: 2488524-IRF640

Description:: MOSFET N-CH 200V 18A TO-220

ECAD Model:

Datasheet:: IRF640

Specifications

STMicroelectronics IRF640 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF640.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MESH OVERLAY™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
18A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IRF6
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
125W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
125W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
180m Ω @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1560pF @ 25V
Current - Continuous Drain (Id) @ 25°C
18A Tc
Gate Charge (Qg) (Max) @ Vgs
72nC @ 10V
Rise Time
27ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
25 ns
Continuous Drain Current (ID)
18A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Pulsed Drain Current-Max (IDM)
72A
Avalanche Energy Rating (Eas)
280 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

Description
The IRF640 is a TO-220/TO-220FP Mesh overlayTM Power MOSFET with an N-channel 200V - 0.15? - 18A capability. The MESH OVERLAYTM process was used to build this power MOSFET, which is based on a consolidated strip layout. In comparison to standard parts from a variety of suppliers, our technology matches and enhances performance.

Features
■ Extremely high dv/dt capability ■ Very low intrinsic capacitances low gate charge and low on-resistance low gate charge and low on-resistance ■ Gate charge minimized ■ Low gate charge ■ Low on-resistance

Applications
■ Switching application ■ Small motor control ■ Switch Mode Power Supplies (SMPS) ■ Power-Over-Ethernet (PoE) ■ Solar inverters ■ Automotive applications

Product Comparison

The three parts on the right have similar specifications to IRF640.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Surface Mount

Published

Additional Feature

HTS Code

Terminal Position

Terminal Form

JESD-30 Code

Configuration

Case Connection

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Supplier Device Package

Input Capacitance

Rds On Max

Weight

Max Operating Temperature

Min Operating Temperature

Number of Channels

Turn On Delay Time

Turn-Off Delay Time

Drain to Source Resistance

Height

Length

Width

View Compare
IRF640

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

200V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

18A

NOT SPECIFIED

IRF6

3

Not Qualified

1

125W Tc

Single

ENHANCEMENT MODE

125W

N-Channel

SWITCHING

180m Ω @ 9A, 10V

4V @ 250μA

1560pF @ 25V

18A Tc

72nC @ 10V

27ns

10V

±20V

25 ns

18A

TO-220AB

20V

200V

72A

280 mJ

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF6215S

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

e0

Obsolete

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

-

-

MOSFET (Metal Oxide)

225

-

-

30

-

-

Not Qualified

1

3.8W Ta 110W Tc

-

ENHANCEMENT MODE

-

P-Channel

SWITCHING

290m Ω @ 6.6A, 10V

4V @ 250μA

860pF @ 25V

13A Tc

66nC @ 10V

-

10V

±20V

-

-

-

-

-

44A

310 mJ

Non-RoHS Compliant

-

YES

1998

AVALANCHE RATED, HIGH RELIABILITY

8541.29.00.95

SINGLE

GULL WING

R-PSSO-G2

SINGLE WITH BUILT-IN DIODE

DRAIN

150V

13A

0.29Ohm

150V

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF640 vs IRF6215S
IRF640L

Vishay Siliconix

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

-

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

3.1W Ta 130W Tc

-

-

-

N-Channel

-

180mOhm @ 11A, 10V

4V @ 250μA

1300pF @ 25V

18A Tc

70nC @ 10V

-

10V

±20V

-

18A

-

-

-

-

-

Non-RoHS Compliant

-

-

2016

-

-

-

-

-

-

-

200V

-

-

-

I2PAK

1.3nF

180 mΩ

-

-

-

-

-

-

-

-

-

-

IRF640 vs IRF640L
IRF634NSPBF

Vishay Siliconix

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~175°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

3.8W Ta 88W Tc

Single

-

-

N-Channel

-

435mOhm @ 4.8A, 10V

4V @ 250μA

620pF @ 25V

8A Tc

34nC @ 10V

16ns

10V

±20V

15 ns

8A

-

20V

-

-

-

ROHS3 Compliant

-

-

2009

-

-

-

-

-

-

-

250V

-

-

-

D2PAK

620pF

435 mΩ

1.437803g

175°C

-55°C

1

8.4 ns

28 ns

435mOhm

4.83mm

10.67mm

9.65mm

IRF640 vs IRF634NSPBF