Vishay Siliconix IRF634PBF

Name: IRF634PBF
Brand: Vishay Siliconix
SKU: 2483074-IRF634PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF634PBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2483074-IRF634PBF

Description:: MOSFET N-CH 250V 8.1A TO-220AB

ECAD Model:

Datasheet:: IRF634PBF

Specifications

Vishay Siliconix IRF634PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF634PBF.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2011
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
450mOhm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
74W Tc
Element Configuration
Single
Power Dissipation
74W
Turn On Delay Time
9.6 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
450mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
770pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8.1A Tc
Gate Charge (Qg) (Max) @ Vgs
41nC @ 10V
Rise Time
21ns
Drain to Source Voltage (Vdss)
250V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
19 ns
Turn-Off Delay Time
42 ns
Continuous Drain Current (ID)
8.1A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
770pF
Drain to Source Resistance
450mOhm
Rds On Max
450 mΩ
Nominal Vgs
4 V
Height
9.01mm
Length
10.41mm
Width
4.7mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF634PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 770pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8.1A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 42 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 450mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9.6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. Operating this transistor requires a 250V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRF634PBF Features
a continuous drain current (ID) of 8.1A
the turn-off delay time is 42 ns
single MOSFETs transistor is 450mOhm
a threshold voltage of 4V
a 250V drain to source voltage (Vdss)

IRF634PBF Applications
There are a lot of Vishay Siliconix
IRF634PBF applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

IRF634PBF More Descriptions

Single N-Channel 250 V 0.45 Ohms Flange Mount Power Mosfet - TO-220AB
Trans MOSFET N-CH 250V 8.1A 3-Pin(3 Tab) TO-220AB
MOSFET, N-CH, 250V, 8.1A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.1A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to IRF634PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

Series

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRF634PBF

Vishay Siliconix

8 Weeks

Through Hole

Through Hole

TO-220-3

3

TO-220AB

6.000006g

-55°C~150°C TJ

Tube

2011

Active

1 (Unlimited)

450mOhm

150°C

-55°C

MOSFET (Metal Oxide)

1

1

74W Tc

Single

74W

9.6 ns

N-Channel

450mOhm @ 5.1A, 10V

4V @ 250μA

770pF @ 25V

8.1A Tc

41nC @ 10V

21ns

250V

10V

±20V

19 ns

42 ns

8.1A

4V

20V

770pF

450mOhm

450 mΩ

4 V

9.01mm

10.41mm

4.7mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF6215STRR

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

1998

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

1

-

3.8W Ta 110W Tc

-

-

-

P-Channel

290m Ω @ 6.6A, 10V

4V @ 250μA

860pF @ 25V

13A Tc

66nC @ 10V

-

150V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

SILICON

HEXFET®

e3

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

Other Transistors

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

13A

0.29Ohm

44A

150V

310 mJ

IRF634PBF vs IRF6215STRR
IRF640L

Vishay Siliconix

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

I2PAK

-

-55°C~150°C TJ

Tube

2016

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

3.1W Ta 130W Tc

-

-

-

N-Channel

180mOhm @ 11A, 10V

4V @ 250μA

1300pF @ 25V

18A Tc

70nC @ 10V

-

200V

10V

±20V

-

-

18A

-

-

1.3nF

-

180 mΩ

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF634PBF vs IRF640L
IRF634STRR

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

D2PAK

-

-55°C~150°C TJ

Tape & Reel (TR)

2016

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

3.1W Ta 74W Tc

-

-

-

N-Channel

450mOhm @ 5.1A, 10V

4V @ 250μA

770pF @ 25V

8.1A Tc

41nC @ 10V

-

250V

10V

±20V

-

-

8.1A

-

-

770pF

-

450 mΩ

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF634PBF vs IRF634STRR

Certification

Related parts for IRF634PBF

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Infineon Technologies

MOSFET P-CH 150V 13A TO-262
IRF6215S

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MOSFET P-CH 150V 13A D2PAK
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Infineon Technologies

MOSFET P-CH 150V 13A D2PAK
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IRF634PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF634PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 250V 8.1A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	373	1 $1.3085 10 $1.1152 100 $0.8326 500 $0.7581 1000 $0.676
IRF634PBF DISTI #	Vishay Siliconix	MOSFET N-CH 250V 8.1A TO-220AB RoHS: Compliant	667	1 $1.79 50 $1.434 100 $1.2548 500 $0.9731 1000 $0.76824
IRF634PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 250V 8.1A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	23500	33 $0.7104 500 $0.672
IRF634PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 250V 8.1A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	373	9 $1.3085 10 $1.1152 100 $0.8326
IRF634PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 250V 8.1A 3-Pin(3 Tab) TO-220AB RoHS: Not Compliant	0	1000 $0.6379 2000 $0.6189 4000 $0.5939 6000 $0.5779 10000 $0.5619
IRF634PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 250V 8.1A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0	1 $0.6719 10 $0.6219 25 $0.6199 50 $0.6189 100 $0.5279 500 $0.4949 1000 $0.4539
IRF634PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 250V 8.1A 3-Pin(3 Tab) TO-220AB RoHS: Not Compliant	0	1 $1.54 10 $1.27 25 $1.17 50 $1.07 100 $0.97 500 $0.834 1000 $0.7
IRF634PBF DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 250V, 8.1A TO-220, Transistor P	119	1 $1.54 10 $1.27 25 $1.17 50 $1.07 100 $0.97 500 $0.834 1000 $0.7 2500 $0.68
IRF634PBF DISTI #	Vishay Dale	IRF634PBF RoHS: Compliant	0	1 $1.98 25 $1.65 100 $1.5 250 $1.38 500 $1.28
IRF634PBF DISTI #	Vishay Intertechnologies	MOSFET N-Chan 250V 8.1 Amp RoHS: Compliant	1387	1 $1.54 10 $1.27 100 $0.97 500 $0.834 1000 $0.659 2500 $0.615 5000 $0.584 10000 $0.562
IRF634PBF DISTI #	Vishay Intertechnologies	Single N-Channel 250 V 0.45 Ohms Flange Mount Powe RoHS: Compliant	69	15 $0.74 500 $0.7
IRF634PBF DISTI #	Vishay Intertechnologies	MOSFET N-CHANNEL 250V 8.1A TO220AB, EA	113	1 $0.36 5 $0.34
IRF634PBF DISTI #	Vishay Intertechnologies	MOSFET N-CHANNEL 250V 8.1A TO220AB, TA	1022	5 $0.34
IRF634PBF DISTI #	Vishay Intertechnologies	Transistor: N-MOSFET, unipolar, 250V, 5.1A, 74	108	1 $0.66 5 $0.61 25 $0.57 100 $0.5 500 $0.44
IRF634PBF DISTI #	Vishay Intertechnologies	N-Ch 250V 8,1A 74W 0,45R TO220AB RoHS: Compliant	175	25 $0.4515 100 $0.3715 300 $0.3315 500 $0.319
IRF634PBF DISTI #	Vishay Intertechnologies	MOSFET, N-CH, 250V, 8.1A, TO-220AB RoHS: Compliant	153	1 $2.44 10 $2.01 100 $1.54 500 $1.33 1000 $1.05 2500 $0.974 5000 $0.924 10000 $0.89
IRF634PBF DISTI #	Vishay Intertechnologies	MOSFET N-Chan 250V 8.1 Amp RoHS: Compliant	0
IRF634PBF DISTI #	Vishay Intertechnologies	MOSFET, N-CH, 250V, 8.1A, TO-220AB RoHS: Compliant	153	5 $0.354 25 $0.347 100 $0.34 250 $0.333 500 $0.326
IRF634PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 250V 8.1A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	373	10 $1.1152 100 $0.8326

IRF634P~~(1)~~
IRF634~~(17)~~
IRF63~~(67)~~
IRF6~~(67)~~
IRF~~(69)~~

Vishay Siliconix IRF634PBF

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