Infineon Technologies IRF630NSPBF
- Part Number:
- IRF630NSPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071629-IRF630NSPBF
- Description:
- MOSFET N-CH 200V 9.3A D2PAK
- ECAD Model:
-
- Datasheet:
- IRF630NSPBF
Infineon Technologies IRF630NSPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF630NSPBF.
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1997
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance300mOhm
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating9.3A
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max82W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation82W
- Case ConnectionDRAIN
- Turn On Delay Time7.9 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs300m Ω @ 5.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds575pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9.3A Tc
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- Rise Time14ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time27 ns
- Continuous Drain Current (ID)9.3A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage200V
- Avalanche Energy Rating (Eas)94 mJ
- Recovery Time176 ns
- Nominal Vgs4 V
- Height4.83mm
- Length10.67mm
- Width9.65mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF630NSPBF Description
The IRF630NSPBF is a HEXFET? fifth generation single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
IRF630NSPBF Features
Advanced process technology
Dynamic dV/dt rating
Fully avalanche rating
Ease of paralleling
Simple drive requirements
IRF630NSPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
The IRF630NSPBF is a HEXFET? fifth generation single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
IRF630NSPBF Features
Advanced process technology
Dynamic dV/dt rating
Fully avalanche rating
Ease of paralleling
Simple drive requirements
IRF630NSPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
IRF630NSPBF More Descriptions
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2 Tab) D2PAK Tube
MOSFET Operating temperature: -55... 175 °C Housing type: D2PAK Polarity: N Power dissipation: 82 W
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9.3A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
MOSFET, N, 200V, 9.5A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:82W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:94mJ; Capacitance Ciss Typ:575pF; Current Iar:9.3A; Current Id Max:9.3A; Current Idss Max:25µA; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.16mm; Fall Time tf:15ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.83°C/W; N-channel Gate Charge:35nC; No. of Transistors:1; On State resistance @ Vgs = 10V:300mohm; Package / Case:D2-PAK; Power Dissipation Pd:82W; Power Dissipation Pd:82W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:37A; Rise Time:14ns
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2 Tab) D2PAK Tube
MOSFET Operating temperature: -55... 175 °C Housing type: D2PAK Polarity: N Power dissipation: 82 W
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9.3A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
MOSFET, N, 200V, 9.5A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:82W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:94mJ; Capacitance Ciss Typ:575pF; Current Iar:9.3A; Current Id Max:9.3A; Current Idss Max:25µA; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.16mm; Fall Time tf:15ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.83°C/W; N-channel Gate Charge:35nC; No. of Transistors:1; On State resistance @ Vgs = 10V:300mohm; Package / Case:D2-PAK; Power Dissipation Pd:82W; Power Dissipation Pd:82W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:37A; Rise Time:14ns
The three parts on the right have similar specifications to IRF630NSPBF.
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ImagePart NumberManufacturerContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Recovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Input CapacitanceRds On MaxWeightMax Operating TemperatureMin Operating TemperatureNumber of ChannelsDrain to Source ResistanceView Compare
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IRF630NSPBFTinSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTubeHEXFET®1997e3Discontinued1 (Unlimited)2EAR99300mOhmAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEFET General Purpose Power200VMOSFET (Metal Oxide)GULL WING2609.3A30R-PSSO-G2182W TcSingleENHANCEMENT MODE82WDRAIN7.9 nsN-ChannelSWITCHING300m Ω @ 5.4A, 10V4V @ 250μA575pF @ 25V9.3A Tc35nC @ 10V14ns10V±20V15 ns27 ns9.3A4V20V200V94 mJ176 ns4 V4.83mm10.67mm9.65mmNo SVHCNoROHS3 CompliantLead Free---------- -
-Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3--55°C~150°C TJTube-2016-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)------3.1W Ta 130W Tc-----N-Channel-180mOhm @ 11A, 10V4V @ 250μA1300pF @ 25V18A Tc70nC @ 10V-10V±20V--18A-----------Non-RoHS Compliant-I2PAK200V1.3nF180 mΩ-----
-
-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~150°C TJTape & Reel (TR)-2016-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)------3.1W Ta 74W Tc-----N-Channel-450mOhm @ 5.1A, 10V4V @ 250μA770pF @ 25V8.1A Tc41nC @ 10V-10V±20V--8.1A-----------Non-RoHS Compliant-D2PAK250V770pF450 mΩ-----
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTube-2009-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)------3.8W Ta 88W TcSingle---8.4 nsN-Channel-435mOhm @ 4.8A, 10V4V @ 250μA620pF @ 25V8A Tc34nC @ 10V16ns10V±20V15 ns28 ns8A-20V----4.83mm10.67mm9.65mm--ROHS3 Compliant-D2PAK250V620pF435 mΩ1.437803g175°C-55°C1435mOhm
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