Infineon Technologies IRF630NS

Name: IRF630NS
Brand: Infineon Technologies
SKU: 3071584-IRF630NS
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF630NS

Manufacturer:: Infineon Technologies

Ventron No:: 3071584-IRF630NS

Description:: MOSFET N-CH 200V 9.3A D2PAK

ECAD Model:

Datasheet:: IRF630N(S,L)

Specifications

Infineon Technologies IRF630NS technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF630NS.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
225
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
82W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
300m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
575pF @ 25V
Current - Continuous Drain (Id) @ 25°C
9.3A Tc
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
9.3A
Drain-source On Resistance-Max
0.3Ohm
Pulsed Drain Current-Max (IDM)
37A
DS Breakdown Voltage-Min
200V
Avalanche Energy Rating (Eas)
94 mJ
RoHS Status
Non-RoHS Compliant

Description

IRF630NS Description
The IRF630NSPBF is a HEXFET? fifth generation single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. The surface-mount power package is capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON resistance in any existing surface-mount package. The Infineon IRF630NSPBF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

IRF630NS Features
Advanced process technology
Dynamic dV/dt rating
Fully avalanche rating
Ease of paralleling
Simple drive requirements

IRF630NS Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits

Product Comparison

The three parts on the right have similar specifications to IRF630NS.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Mount

Continuous Drain Current (ID)

Input Capacitance

Rds On Max

Weight

Max Operating Temperature

Min Operating Temperature

Number of Channels

Element Configuration

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Resistance

Height

Length

Width

View Compare
IRF630NS

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

e0

Obsolete

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

MOSFET (Metal Oxide)

SINGLE

GULL WING

225

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

82W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

300m Ω @ 5.4A, 10V

4V @ 250μA

575pF @ 25V

9.3A Tc

35nC @ 10V

200V

10V

±20V

9.3A

0.3Ohm

37A

200V

94 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF630NL

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

82W Tc

-

-

N-Channel

-

300mOhm @ 5.4A, 10V

4V @ 250μA

575pF @ 25V

9.3A Tc

35nC @ 10V

200V

10V

±20V

-

-

-

-

-

Non-RoHS Compliant

TO-262

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF630NS vs IRF630NL
IRF634STRR

Vishay Siliconix

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

3.1W Ta 74W Tc

-

-

N-Channel

-

450mOhm @ 5.1A, 10V

4V @ 250μA

770pF @ 25V

8.1A Tc

41nC @ 10V

250V

10V

±20V

-

-

-

-

-

Non-RoHS Compliant

D2PAK

Surface Mount

8.1A

770pF

450 mΩ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF630NS vs IRF634STRR
IRF634NLPBF

Vishay Siliconix

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

-

2009

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

3.8W Ta 88W Tc

-

-

N-Channel

-

435mOhm @ 4.8A, 10V

4V @ 250μA

620pF @ 25V

8A Tc

34nC @ 10V

250V

10V

±20V

-

-

-

-

-

ROHS3 Compliant

I2PAK

Through Hole

8A

620pF

435 mΩ

2.387001g

175°C

-55°C

1

Single

8.4 ns

16ns

15 ns

28 ns

20V

435mOhm

9.65mm

10.67mm

4.83mm

IRF630NS vs IRF634NLPBF