Infineon Technologies IRF6217TRPBF
- Part Number:
- IRF6217TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070337-IRF6217TRPBF
- Description:
- MOSFET P-CH 150V 0.7A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF6217TRPBF
Infineon Technologies IRF6217TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6217TRPBF.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2002
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time12 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.4 Ω @ 420mA, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds150pF @ 25V
- Current - Continuous Drain (Id) @ 25°C700mA Ta
- Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
- Rise Time7.2ns
- Drain to Source Voltage (Vdss)150V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)16 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)-700mA
- Threshold Voltage-5V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.7A
- Drain to Source Breakdown Voltage-150V
- Nominal Vgs20 V
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description
The IRF6217TRPBF is a HEXFET? Power MOSFET. Due to its low gate drive power, quick switching speed, simple advanced paralleling capability, wide bandwidth, robustness, easy drive, simple biasing, ease of application, and ease of maintenance, the power MOSFET is the most widely used power semiconductor device in the world.
Features
Fully Characterized Capacitance Including Effective COSS to Simplify Design
Fully Characterized Avalanche Voltage and Current
Low Gate to Drain Charge to Reduce Switching Losses
On-resistance (RDS(ON))
Maximum junction temperature (TJ(max))
Applications
Reset Switch for Active Clamp Reset DC to DC converters
Lead-Free
Small motor control
Solar inverters
Automotive applications
The IRF6217TRPBF is a HEXFET? Power MOSFET. Due to its low gate drive power, quick switching speed, simple advanced paralleling capability, wide bandwidth, robustness, easy drive, simple biasing, ease of application, and ease of maintenance, the power MOSFET is the most widely used power semiconductor device in the world.
Features
Fully Characterized Capacitance Including Effective COSS to Simplify Design
Fully Characterized Avalanche Voltage and Current
Low Gate to Drain Charge to Reduce Switching Losses
On-resistance (RDS(ON))
Maximum junction temperature (TJ(max))
Applications
Reset Switch for Active Clamp Reset DC to DC converters
Lead-Free
Small motor control
Solar inverters
Automotive applications
IRF6217TRPBF More Descriptions
Single P-Channel 150 V 2.4 Ohm 9 nC HEXFET® Power Mosfet - SOIC-8
IRF6217TRPBF,MOSFET, P-CHANNEL , -150V, -0.7A, 2400 MOHM, 6
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET Transistor; Transistor Polarity:P; MOSFET Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-700mA; Drain Source Voltage Vds:-150V; On Resistance Rds(on):2.4ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:20V; Power Dissipation Pd:2.5W
IRF6217TRPBF,MOSFET, P-CHANNEL , -150V, -0.7A, 2400 MOHM, 6
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET Transistor; Transistor Polarity:P; MOSFET Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-700mA; Drain Source Voltage Vds:-150V; On Resistance Rds(on):2.4ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:20V; Power Dissipation Pd:2.5W
The three parts on the right have similar specifications to IRF6217TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageInput CapacitanceRds On MaxWeightMax Operating TemperatureMin Operating TemperatureNumber of ChannelsDrain to Source ResistanceView Compare
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IRF6217TRPBF14 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2002e3Not For New Designs1 (Unlimited)8EAR99MOSFET (Metal Oxide)DUALGULL WING2603012.5W TaSingleENHANCEMENT MODE2.5W12 nsP-ChannelSWITCHING2.4 Ω @ 420mA, 10V5V @ 250μA150pF @ 25V700mA Ta9nC @ 10V7.2ns150V10V±20V16 ns14 ns-700mA-5V20V0.7A-150V20 V1.4986mm4.9784mm3.9878mmNo SVHCNoROHS3 CompliantLead Free--------- -
---Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTubeHEXFET®2004-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-----82W Tc----N-Channel-300mOhm @ 5.4A, 10V4V @ 250μA575pF @ 25V9.3A Tc35nC @ 10V-200V10V±20V-------------Non-RoHS Compliant-TO-262-------
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--Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3--55°C~150°C TJTube-2016-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-----3.1W Ta 130W Tc----N-Channel-180mOhm @ 11A, 10V4V @ 250μA1300pF @ 25V18A Tc70nC @ 10V-200V10V±20V--18A----------Non-RoHS Compliant-I2PAK1.3nF180 mΩ-----
-
--Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTube-2009-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-----3.8W Ta 88W TcSingle--8.4 nsN-Channel-435mOhm @ 4.8A, 10V4V @ 250μA620pF @ 25V8A Tc34nC @ 10V16ns250V10V±20V15 ns28 ns8A-20V---9.65mm10.67mm4.83mm--ROHS3 Compliant-I2PAK620pF435 mΩ2.387001g175°C-55°C1435mOhm
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