Infineon Technologies IRF6215STRRPBF

Name: IRF6215STRRPBF
Brand: Infineon Technologies
SKU: 2483356-IRF6215STRRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF6215STRRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2483356-IRF6215STRRPBF

Description:: MOSFET P-CH 150V 13A D2PAK

ECAD Model:

Datasheet:: IRF6215STRRPBF

Specifications

Infineon Technologies IRF6215STRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6215STRRPBF.

Factory Lead Time
16 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2005
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.8W Ta 110W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
290m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
860pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13A Tc
Gate Charge (Qg) (Max) @ Vgs
66nC @ 10V
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
13A
Drain-source On Resistance-Max
0.29Ohm
Pulsed Drain Current-Max (IDM)
44A
DS Breakdown Voltage-Min
150V
Avalanche Energy Rating (Eas)
310 mJ
RoHS Status
ROHS3 Compliant

Description

IRF6215STRRPBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 310 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 860pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 13A.A maximum pulsed drain current of 44A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRF6215STRRPBF Features
the avalanche energy rating (Eas) is 310 mJ
based on its rated peak drain current 44A.
a 150V drain to source voltage (Vdss)

IRF6215STRRPBF Applications
There are a lot of Infineon Technologies
IRF6215STRRPBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRF6215STRRPBF More Descriptions

MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.29Ohm;ID -13A;D2Pak;PD 110W;VGS /-20V
-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Single P-Channel 150 V 0.29 Ohm 66 nC HEXFET® Power Mosfet - D2PAK
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):290mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D2-Pak; Power Dissipation, Pd:110W ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRF6215STRRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Number of Channels

Element Configuration

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
IRF6215STRRPBF

Infineon Technologies

16 Weeks

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2005

e3

Not For New Designs

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

Other Transistors

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 110W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

290m Ω @ 6.6A, 10V

4V @ 250μA

860pF @ 25V

13A Tc

66nC @ 10V

150V

10V

±20V

13A

0.29Ohm

44A

150V

310 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF6215STRR

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

Other Transistors

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

-

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 110W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

290m Ω @ 6.6A, 10V

4V @ 250μA

860pF @ 25V

13A Tc

66nC @ 10V

150V

10V

±20V

13A

0.29Ohm

44A

150V

310 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF6215STRRPBF vs IRF6215STRR
IRF634NLPBF

Vishay Siliconix

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

-

2009

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

3.8W Ta 88W Tc

-

-

N-Channel

-

435mOhm @ 4.8A, 10V

4V @ 250μA

620pF @ 25V

8A Tc

34nC @ 10V

250V

10V

±20V

-

-

-

-

-

ROHS3 Compliant

Through Hole

I2PAK

2.387001g

175°C

-55°C

1

Single

8.4 ns

16ns

15 ns

28 ns

8A

20V

620pF

435mOhm

435 mΩ

9.65mm

10.67mm

4.83mm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF6215STRRPBF vs IRF634NLPBF
IRF634

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

MOSFET (Metal Oxide)

TO-220AB

-

450 mOhm @ 5.1A, 10V

74W (Tc)

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

770pF @ 25V

41nC @ 10V

N-Channel

-

250V

8.1A (Tc)

IRF6215STRRPBF vs IRF634

Certification

Related parts for IRF6215STRRPBF

IRF6215L-103PBF

Infineon Technologies

MOSFET P-CH 150V 13A TO-262
IRF6215S

Infineon Technologies

MOSFET P-CH 150V 13A D2PAK
IRF6215STRR

Infineon Technologies

MOSFET P-CH 150V 13A D2PAK
IRF6215L-103

Infineon Technologies

MOSFET P-CH 150V 13A TO262
IRF630NL

Infineon Technologies

MOSFET N-CH 200V 9.3A TO-262
IRF640L

Vishay Siliconix

MOSFET N-CH 200V 18A TO-262
IRF634STRR

Vishay Siliconix

MOSFET N-CH 250V 8.1A D2PAK
IRF634NLPBF

Vishay Siliconix

MOSFET N-CH 250V 8A TO-262
IRF634NSPBF

Vishay Siliconix

MOSFET N-CH 250V 8A D2PAK
IRF634

Vishay Siliconix

MOSFET N-CH 250V 8.1A TO-220AB

Popular Search Part Number Related Keywords Search Tags

IRF6215STRRPBF Price
IRF6215STRRPBF Picture
IRF6215STRRPBF Buy
IRF6215STRRPBF Distributor
IRF6215STRRPBF Image
IRF6215STRRPBF Inquiry
IRF6215STRRPBF Manufacturer
IRF6215STRRPBF Part
IRF6215STRRPBF Description
IRF6215STRRPBF Technical Data
IRF6215STRRPBF Stock
IRF6215STRRPBF Wholesales
IRF6215STRRPBF PDF
IRF6215STRRPBF Inventory
IRF6215STRRPBF Supplier
IRF6215STRRPBF Datasheet
IRF6215STRRPBF Rfq
IRF6215STRRPBF Specification

IRF6215~~(12)~~
IRF621~~(28)~~
IRF62~~(65)~~
IRF6~~(67)~~
IRF~~(69)~~

Part Number	Manufacturers	Description	Stock	Price
IRF6215STRRPBF DISTI #IRF6215STRRPBF	Infineon Technologies AG	Trans MOSFET P-CH 150V 13A 3-Pin(2 Tab) D2PAK T/R	700	1 $1.0117 10 $0.8976 25 $0.887 100 $0.7241 250 $0.7161 500 $0.5487
IRF6215STRRPBF DISTI #IRF6215STRRPBF	Infineon Technologies AG	MOSFET P-CH 150V 13A D2PAK RoHS: Compliant	625	1 $1.62 10 $1.433 100 $1.1328
IRF6215STRRPBF DISTI #IRF6215STRRPBF	Infineon Technologies AG	MOSFET P-CH 150V 13A D2PAK RoHS: Compliant	625	1 $1.62 10 $1.433 100 $1.1328
IRF6215STRRPBF DISTI #IRF6215STRRPBF	Infineon Technologies AG	MOSFET P-CH 150V 13A D2PAK RoHS: Compliant	0	800 $0.74519
IRF6215STRRPBF DISTI #IRF6215STRRPBF	Infineon Technologies AG	Trans MOSFET P-CH 150V 13A 3-Pin(2 Tab) D2PAK T/R	700	16 $0.8976 25 $0.887 100 $0.7241 250 $0.7161 500 $0.5487
IRF6215STRRPBF DISTI #IRF6215STRRPBF	Infineon Technologies AG	Trans MOSFET P-CH 150V 13A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	800 $0.4699 1600 $0.4529 3200 $0.4369 4800 $0.4219 8000 $0.4139
IRF6215STRRPBF DISTI #IRF6215STRRPBF	Infineon Technologies AG	Trans MOSFET P-CH 150V 13A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	800 $0.5109 1600 $0.4179 3200 $0.3829 4800 $0.3529 8000 $0.3279
IRF6215STRRPBF DISTI #IRF6215STRRPBF	Infineon Technologies AG	MOSFET, Power, P-Ch, VDSS -150V, RDS(ON) 0.29O RoHS: Compliant	0	800 $0.922 1600 $0.904 4000 $0.876
IRF6215STRRPBF DISTI #IRF6215STRRPBF	Infineon Technologies AG	MOSFET 1 P-CH -150V HEXFET 290mOhms 44nC RoHS: Compliant	1464	1 $1.33 10 $1.14 100 $0.878 500 $0.776
IRF6215STRRPBF DISTI #IRF6215STRRPBF	Infineon Technologies AG	Trans MOSFET P-CH 150V 13A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	700	10 $0.8976 25 $0.887 100 $0.7241 250 $0.7161

Infineon Technologies IRF6215STRRPBF

Quick Request Quote

DS1990A: An Authentication and Data Storage Solution that Balances Efficiency and Security

PT2399: The Next-Gen Digital Delay and Echo Audio Processor IC

What is the STM32F103C8T6 Microcontroller and How Does It Work?

1N4007 Diode Characteristics and Application Guide