Vishay Siliconix IRF620PBF

Name: IRF620PBF
Brand: Vishay Siliconix
SKU: 3070140-IRF620PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF620PBF

Manufacturer:: Vishay Siliconix

Ventron No:: 3070140-IRF620PBF

Description:: MOSFET N-CH 200V 5.2A TO-220AB

ECAD Model:

Datasheet:: IRF620PBF

Specifications

Vishay Siliconix IRF620PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF620PBF.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
800mOhm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
250V
Technology
MOSFET (Metal Oxide)
Current Rating
5.2A
Number of Elements
1
Number of Channels
1
Voltage
200V
Power Dissipation-Max
50W Tc
Element Configuration
Single
Current
52A
Power Dissipation
50W
Turn On Delay Time
7.2 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
260pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5.2A Tc
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Rise Time
22ns
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
5.2A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Input Capacitance
260pF
Recovery Time
300 ns
Drain to Source Resistance
800mOhm
Rds On Max
800 mΩ
Nominal Vgs
2 V
Height
9.01mm
Length
10.41mm
Width
4.7mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF620PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 260pF @ 25V.This device conducts a continuous drain current (ID) of 5.2A, which is the maximum continuous current transistor can conduct.Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 19 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 800mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7.2 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF620PBF Features
a continuous drain current (ID) of 5.2A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 800mOhm
a threshold voltage of 2V
a 200V drain to source voltage (Vdss)

IRF620PBF Applications
There are a lot of Vishay Siliconix
IRF620PBF applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

IRF620PBF More Descriptions

Single N-Channel 200 V 0.8 Ohms Flange Mount Power Mosfet - TO-220AB
MOSFET N-CH 200V 5.2A TO-220AB | Siliconix / Vishay IRF620PBF
200V 5.2A 50W 800m´Î@10V3.1A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 200V, 5.2A To-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5.2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Msl:- Rohs Compliant: No |Vishay IRF620PBF.
MOSFET, N, 200V, 5.2A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:5.2A; Resistance, Rds On:0.8ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:18A; Power Dissipation:50W; Power, Pd:50W; Thermal Resistance, Junction to Case A:2.5°C/W; Voltage, Vds Max:200V

Product Comparison

The three parts on the right have similar specifications to IRF620PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Voltage

Power Dissipation-Max

Element Configuration

Current

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Recovery Time

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
IRF620PBF

Vishay Siliconix

8 Weeks

Through Hole

Through Hole

TO-220-3

3

TO-220AB

6.000006g

-55°C~150°C TJ

Tube

2004

Active

1 (Unlimited)

800mOhm

150°C

-55°C

250V

MOSFET (Metal Oxide)

5.2A

1

1

200V

50W Tc

Single

52A

50W

7.2 ns

N-Channel

800mOhm @ 3.1A, 10V

4V @ 250μA

260pF @ 25V

5.2A Tc

14nC @ 10V

22ns

200V

10V

±20V

13 ns

19 ns

5.2A

2V

20V

200V

260pF

300 ns

800mOhm

800 mΩ

2 V

9.01mm

10.41mm

4.7mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF6215L-103

Infineon Technologies

-

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-

-

Tube

1998

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

3.8W Ta 110W Tc

-

-

-

-

P-Channel

290m Ω @ 6.6A, 10V

4V @ 250μA

860pF @ 25V

13A Tc

66nC @ 10V

-

150V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

HEXFET®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF620PBF vs IRF6215L-103
IRF630NL

Infineon Technologies

-

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

TO-262

-

-55°C~175°C TJ

Tube

2004

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

82W Tc

-

-

-

-

N-Channel

300mOhm @ 5.4A, 10V

4V @ 250μA

575pF @ 25V

9.3A Tc

35nC @ 10V

-

200V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

HEXFET®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF620PBF vs IRF630NL
IRF634

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

MOSFET (Metal Oxide)

TO-220AB

-

450 mOhm @ 5.1A, 10V

74W (Tc)

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

770pF @ 25V

41nC @ 10V

N-Channel

-

250V

8.1A (Tc)

IRF620PBF vs IRF634