Vishay Siliconix IRF614
- Part Number:
- IRF614
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3554438-IRF614
- Description:
- MOSFET N-CH 250V 2.7A TO-220AB
- Datasheet:
- IRF614
Vishay Siliconix IRF614 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF614.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max36W Tc
- Element ConfigurationSingle
- Turn On Delay Time7 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2Ohm @ 1.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.7A Tc
- Gate Charge (Qg) (Max) @ Vgs8.2nC @ 10V
- Rise Time7.6ns
- Drain to Source Voltage (Vdss)250V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)7 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)2.7A
- Gate to Source Voltage (Vgs)20V
- Input Capacitance140pF
- Drain to Source Resistance2Ohm
- Rds On Max2 Ω
- Height9.01mm
- Length10.41mm
- Width4.7mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
IRF614 Overview
A device's maximal input capacitance is 140pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.7A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 16 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 2Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF614 Features
a continuous drain current (ID) of 2.7A
the turn-off delay time is 16 ns
single MOSFETs transistor is 2Ohm
a 250V drain to source voltage (Vdss)
IRF614 Applications
There are a lot of Vishay Siliconix
IRF614 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 140pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.7A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 16 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 2Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF614 Features
a continuous drain current (ID) of 2.7A
the turn-off delay time is 16 ns
single MOSFETs transistor is 2Ohm
a 250V drain to source voltage (Vdss)
IRF614 Applications
There are a lot of Vishay Siliconix
IRF614 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRF614 More Descriptions
Trans MOSFET N-CH 250V 2.7A 3-Pin(3 Tab) TO-220AB
TRANSISTOR FET N CHANNEL 3R5 RADIAL TO-220
International Rectifier power module
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:2.7A; On-Resistance, Rds(on):2ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB; Drain Source On Resistance @ 10V:2000mohm RoHS Compliant: No
TRANSISTOR FET N CHANNEL 3R5 RADIAL TO-220
International Rectifier power module
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:2.7A; On-Resistance, Rds(on):2ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB; Drain Source On Resistance @ 10V:2000mohm RoHS Compliant: No
The three parts on the right have similar specifications to IRF614.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusView Compare
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IRF614Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2011Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)136W TcSingle7 nsN-Channel2Ohm @ 1.6A, 10V4V @ 250μA140pF @ 25V2.7A Tc8.2nC @ 10V7.6ns250V10V±20V7 ns16 ns2.7A20V140pF2Ohm2 Ω9.01mm10.41mm4.7mmNoNon-RoHS Compliant-
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-D2PAK--55°C~150°C TJTape & Reel (TR)2016Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-3.1W Ta 74W Tc--N-Channel450mOhm @ 5.1A, 10V4V @ 250μA770pF @ 25V8.1A Tc41nC @ 10V-250V10V±20V--8.1A-770pF-450 mΩ----Non-RoHS Compliant
-
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-I2PAK2.387001g-55°C~175°C TJTube2009Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)13.8W Ta 88W TcSingle8.4 nsN-Channel435mOhm @ 4.8A, 10V4V @ 250μA620pF @ 25V8A Tc34nC @ 10V16ns250V10V±20V15 ns28 ns8A20V620pF435mOhm435 mΩ9.65mm10.67mm4.83mm-ROHS3 Compliant
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~175°C TJTube2009Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)13.8W Ta 88W TcSingle8.4 nsN-Channel435mOhm @ 4.8A, 10V4V @ 250μA620pF @ 25V8A Tc34nC @ 10V16ns250V10V±20V15 ns28 ns8A20V620pF435mOhm435 mΩ4.83mm10.67mm9.65mm-ROHS3 Compliant
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