IRF614

Vishay Siliconix IRF614

Part Number:
IRF614
Manufacturer:
Vishay Siliconix
Ventron No:
3554438-IRF614
Description:
MOSFET N-CH 250V 2.7A TO-220AB
ECAD Model:
Datasheet:
IRF614

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Specifications
Vishay Siliconix IRF614 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF614.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2011
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    36W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    7 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    2Ohm @ 1.6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    140pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2.7A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    8.2nC @ 10V
  • Rise Time
    7.6ns
  • Drain to Source Voltage (Vdss)
    250V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    7 ns
  • Turn-Off Delay Time
    16 ns
  • Continuous Drain Current (ID)
    2.7A
  • Gate to Source Voltage (Vgs)
    20V
  • Input Capacitance
    140pF
  • Drain to Source Resistance
    2Ohm
  • Rds On Max
    2 Ω
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
IRF614 Overview
A device's maximal input capacitance is 140pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2.7A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 16 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 2Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRF614 Features
a continuous drain current (ID) of 2.7A
the turn-off delay time is 16 ns
single MOSFETs transistor is 2Ohm
a 250V drain to source voltage (Vdss)


IRF614 Applications
There are a lot of Vishay Siliconix
IRF614 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRF614 More Descriptions
Trans MOSFET N-CH 250V 2.7A 3-Pin(3 Tab) TO-220AB
TRANSISTOR FET N CHANNEL 3R5 RADIAL TO-220
International Rectifier power module
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:2.7A; On-Resistance, Rds(on):2ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB; Drain Source On Resistance @ 10V:2000mohm RoHS Compliant: No
Product Comparison
The three parts on the right have similar specifications to IRF614.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    View Compare
  • IRF614
    IRF614
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2011
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    36W Tc
    Single
    7 ns
    N-Channel
    2Ohm @ 1.6A, 10V
    4V @ 250μA
    140pF @ 25V
    2.7A Tc
    8.2nC @ 10V
    7.6ns
    250V
    10V
    ±20V
    7 ns
    16 ns
    2.7A
    20V
    140pF
    2Ohm
    2 Ω
    9.01mm
    10.41mm
    4.7mm
    No
    Non-RoHS Compliant
    -
  • IRF634STRR
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    D2PAK
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    3.1W Ta 74W Tc
    -
    -
    N-Channel
    450mOhm @ 5.1A, 10V
    4V @ 250μA
    770pF @ 25V
    8.1A Tc
    41nC @ 10V
    -
    250V
    10V
    ±20V
    -
    -
    8.1A
    -
    770pF
    -
    450 mΩ
    -
    -
    -
    -
    Non-RoHS Compliant
  • IRF634NLPBF
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    I2PAK
    2.387001g
    -55°C~175°C TJ
    Tube
    2009
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    3.8W Ta 88W Tc
    Single
    8.4 ns
    N-Channel
    435mOhm @ 4.8A, 10V
    4V @ 250μA
    620pF @ 25V
    8A Tc
    34nC @ 10V
    16ns
    250V
    10V
    ±20V
    15 ns
    28 ns
    8A
    20V
    620pF
    435mOhm
    435 mΩ
    9.65mm
    10.67mm
    4.83mm
    -
    ROHS3 Compliant
  • IRF634NSPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~175°C TJ
    Tube
    2009
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    3.8W Ta 88W Tc
    Single
    8.4 ns
    N-Channel
    435mOhm @ 4.8A, 10V
    4V @ 250μA
    620pF @ 25V
    8A Tc
    34nC @ 10V
    16ns
    250V
    10V
    ±20V
    15 ns
    28 ns
    8A
    20V
    620pF
    435mOhm
    435 mΩ
    4.83mm
    10.67mm
    9.65mm
    -
    ROHS3 Compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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