Vishay Siliconix IRF610PBF
- Part Number:
- IRF610PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478675-IRF610PBF
- Description:
- MOSFET N-CH 200V 3.3A TO-220AB
- Datasheet:
- IRF610PBF
Vishay Siliconix IRF610PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF610PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published1997
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance1.5Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Current Rating3.3A
- Number of Elements1
- Number of Channels1
- Voltage200V
- Power Dissipation-Max36W Tc
- Element ConfigurationSingle
- Power Dissipation36W
- Turn On Delay Time8.2 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.5Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.3A Tc
- Gate Charge (Qg) (Max) @ Vgs8.2nC @ 10V
- Rise Time17ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)8.9 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)3.3A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage200V
- Input Capacitance140pF
- Recovery Time310 ns
- Drain to Source Resistance1.5Ohm
- Rds On Max1.5 Ω
- Nominal Vgs4 V
- Height9.01mm
- Length10.41mm
- Width4.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF610PBF Overview
A device's maximum input capacitance is 140pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF610PBF Features
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)
IRF610PBF Applications
There are a lot of Vishay Siliconix
IRF610PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 140pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF610PBF Features
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)
IRF610PBF Applications
There are a lot of Vishay Siliconix
IRF610PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF610PBF More Descriptions
Single N-Channel 200 V 1.5 Ohms Flange Mount Power Mosfet - TO-220AB
Trans MOSFET N-CH 200V 3.3A 3-Pin (3 Tab) TO-220AB
MOSFET N-CH 200V 3.3A TO-220AB | Siliconix / Vishay IRF610PBF
200V 3.3A 1.5´Î@10V2A 36W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 200V, 3.3A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:36W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:3.3A; Junction to Case Thermal Resistance A:3.5°C/W; Package / Case:TO-220AB; Power Dissipation Pd:36W; Power Dissipation Pd:36W; Pulse Current Idm:10A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Trans MOSFET N-CH 200V 3.3A 3-Pin (3 Tab) TO-220AB
MOSFET N-CH 200V 3.3A TO-220AB | Siliconix / Vishay IRF610PBF
200V 3.3A 1.5´Î@10V2A 36W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 200V, 3.3A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:36W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:3.3A; Junction to Case Thermal Resistance A:3.5°C/W; Package / Case:TO-220AB; Power Dissipation Pd:36W; Power Dissipation Pd:36W; Pulse Current Idm:10A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRF610PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRF610PBF8 WeeksThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube1997Active1 (Unlimited)1.5Ohm150°C-55°C200VMOSFET (Metal Oxide)3.3A11200V36W TcSingle36W8.2 nsN-Channel1.5Ohm @ 2A, 10V4V @ 250μA140pF @ 25V3.3A Tc8.2nC @ 10V17ns200V10V±20V8.9 ns14 ns3.3A4V20V200V140pF310 ns1.5Ohm1.5 Ω4 V9.01mm10.41mm4.7mmUnknownNoROHS3 CompliantLead Free-------------------------
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~175°C TJTape & Reel (TR)1998Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-1--3.8W Ta 110W Tc---P-Channel290m Ω @ 6.6A, 10V4V @ 250μA860pF @ 25V13A Tc66nC @ 10V-150V10V±20V----------------Non-RoHS Compliant-YESSILICONHEXFET®e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYOther TransistorsSINGLEGULL WING26030R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING13A0.29Ohm44A150V310 mJ
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--Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA----Tube1998Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----3.8W Ta 110W Tc---P-Channel290m Ω @ 6.6A, 10V4V @ 250μA860pF @ 25V13A Tc66nC @ 10V-150V10V±20V----------------Non-RoHS Compliant---HEXFET®---------------------
-
-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-D2PAK--55°C~150°C TJTape & Reel (TR)2016Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----3.1W Ta 74W Tc---N-Channel450mOhm @ 5.1A, 10V4V @ 250μA770pF @ 25V8.1A Tc41nC @ 10V-250V10V±20V--8.1A---770pF--450 mΩ------Non-RoHS Compliant-------------------------
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