Infineon Technologies IRF5803TRPBF
- Part Number:
- IRF5803TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2848801-IRF5803TRPBF
- Description:
- MOSFET P-CH 40V 3.4A 6-TSOP
- Datasheet:
- IRF5803TRPBF
Infineon Technologies IRF5803TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF5803TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2001
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Resistance112MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-3.4A
- ConfigurationSingle
- Number of Channels1
- Power Dissipation-Max2W Ta
- Power Dissipation2W
- Turn On Delay Time43 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs112m Ω @ 3.4A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1110pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.4A Ta
- Gate Charge (Qg) (Max) @ Vgs37nC @ 10V
- Rise Time550ns
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)50 ns
- Turn-Off Delay Time88 ns
- Continuous Drain Current (ID)-3.4A
- Threshold Voltage-3V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-40V
- Max Junction Temperature (Tj)150°C
- Height1.45mm
- Length3.1mm
- Width1.4986mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IRF5803TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1110pF @ 25V.This device conducts a continuous drain current (ID) of -3.4A, which is the maximum continuous current transistor can conduct.Using VGS=-40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 88 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 43 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRF5803TRPBF Features
a continuous drain current (ID) of -3.4A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 88 ns
a threshold voltage of -3V
a 40V drain to source voltage (Vdss)
IRF5803TRPBF Applications
There are a lot of Infineon Technologies
IRF5803TRPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1110pF @ 25V.This device conducts a continuous drain current (ID) of -3.4A, which is the maximum continuous current transistor can conduct.Using VGS=-40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 88 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 43 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRF5803TRPBF Features
a continuous drain current (ID) of -3.4A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 88 ns
a threshold voltage of -3V
a 40V drain to source voltage (Vdss)
IRF5803TRPBF Applications
There are a lot of Infineon Technologies
IRF5803TRPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRF5803TRPBF More Descriptions
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHSInfineon SCT
MOSFET, P-CHANNEL, -40V, -3.4A, 112 MOHM, 25 NC QG, TSOP-6
Single P-Channel 40 V 190 mOhm 37 nC HEXFET® Power Mosfet - TSOP-6
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; P-Channel MOSFET | Target Applications: DC Switches; Load Switch
Transistor Polarity:p Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3.4A; On Resistance Rds(On):0.112Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:-Rohs Compliant: Yes
MOSFET,P,40V,3.4A,TSOP6; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:40V; On Resistance Rds(on):112mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:2W; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Application Code:LowR; Cont Current Id @ 25°C:3.4A; Cont Current Id @ 70°C:2.7; Current Id Max:-3.4A; Junction to Case Thermal Resistance A:62.5°C/W; Package / Case:TSOP; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:27A; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:-40V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V
MOSFET, P-CHANNEL, -40V, -3.4A, 112 MOHM, 25 NC QG, TSOP-6
Single P-Channel 40 V 190 mOhm 37 nC HEXFET® Power Mosfet - TSOP-6
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; P-Channel MOSFET | Target Applications: DC Switches; Load Switch
Transistor Polarity:p Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3.4A; On Resistance Rds(On):0.112Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:-Rohs Compliant: Yes
MOSFET,P,40V,3.4A,TSOP6; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:40V; On Resistance Rds(on):112mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:2W; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Application Code:LowR; Cont Current Id @ 25°C:3.4A; Cont Current Id @ 70°C:2.7; Current Id Max:-3.4A; Junction to Case Thermal Resistance A:62.5°C/W; Package / Case:TSOP; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:27A; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:-40V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V
The three parts on the right have similar specifications to IRF5803TRPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyCurrent RatingConfigurationNumber of ChannelsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageSurface MountTransistor Element MaterialNumber of TerminationsAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)HTS CodeView Compare
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IRF5803TRPBF12 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-66-55°C~150°C TJTape & Reel (TR)HEXFET®2001e3Active1 (Unlimited)EAR99112MOhmMatte Tin (Sn)Other Transistors-40VMOSFET (Metal Oxide)-3.4ASingle12W Ta2W43 nsP-Channel112m Ω @ 3.4A, 10V3V @ 250μA1110pF @ 25V3.4A Ta37nC @ 10V550ns40V4.5V 10V±20V50 ns88 ns-3.4A-3V20V-40V150°C1.45mm3.1mm1.4986mmNo SVHCNoROHS3 CompliantContains Lead----------------------
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)HEXFET®2004-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)---3.8W Ta 48W Tc--N-Channel200mOhm @ 5.7A, 10V4V @ 250μA330pF @ 25V9.7A Tc25nC @ 10V-100V10V±20V--------------D2PAK--------------------
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)HEXFET®1998e3Obsolete1 (Unlimited)EAR99-Matte Tin (Sn) - with Nickel (Ni) barrierOther Transistors-MOSFET (Metal Oxide)-SINGLE WITH BUILT-IN DIODE-3.8W Ta 200W Tc--P-Channel60m Ω @ 24A, 10V4V @ 250μA2700pF @ 25V40A Tc180nC @ 10V-100V10V±20V------------Non-RoHS Compliant--YESSILICON2HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCESINGLEGULL WING26030R-PSSO-G2Not Qualified1ENHANCEMENT MODEDRAINSWITCHING38A0.06Ohm140A100V120 mJ-
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTubeHEXFET®2002e0Obsolete1 (Unlimited)EAR99-Tin/Lead (Sn/Pb)--MOSFET (Metal Oxide)-SINGLE WITH BUILT-IN DIODE-3.8W Ta 70W Tc--N-Channel90m Ω @ 9A, 10V4V @ 250μA920pF @ 25V17A Tc37nC @ 10V-100V10V±20V------------Non-RoHS Compliant--YESSILICON2AVALANCHE RATEDSINGLEGULL WING22530R-PSSO-G2Not Qualified1ENHANCEMENT MODEDRAINSWITCHING17A0.09Ohm60A100V93 mJ8541.29.00.95
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