IRF540PBF

Vishay Siliconix IRF540PBF

Part Number:
IRF540PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2478393-IRF540PBF
Description:
MOSFET N-CH 100V 28A TO-220AB
ECAD Model:
Datasheet:
IRF540PBF

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Specifications
Vishay Siliconix IRF540PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF540PBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    77mOhm
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    28A
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    100V
  • Power Dissipation-Max
    150W Tc
  • Element Configuration
    Single
  • Current
    28A
  • Power Dissipation
    150W
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    77mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1700pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    28A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    72nC @ 10V
  • Rise Time
    44ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    43 ns
  • Turn-Off Delay Time
    53 ns
  • Continuous Drain Current (ID)
    28A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance
    1.7nF
  • Recovery Time
    360 ns
  • Max Junction Temperature (Tj)
    175°C
  • Drain to Source Resistance
    77mOhm
  • Rds On Max
    77 mΩ
  • Nominal Vgs
    4 V
  • Height
    19.89mm
  • Length
    10.51mm
  • Width
    4.7mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF540PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1700pF @ 25V.This device conducts a continuous drain current (ID) of 28A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 53 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 77mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF540PBF Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 77mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)


IRF540PBF Applications
There are a lot of Vishay Siliconix
IRF540PBF applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRF540PBF More Descriptions
Transistor: N-MOSFET; unipolar; 100V; 28A; 0.077ohm; 150W; -55 175 deg.C; THT; TO220
Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220-3
Transistor NPN IRF540/IRF540PBF INTERNATIONAL RECTIFIER RoHS Ampere=28 Volt=100 TO220Halfin
SILICONIX THT MOSFET NFET 100V 28A 77mΩ 175°C TO-220 IRF540-PBF
Trans MOSFET N-CH 100V 28A 3-Pin(3 Tab) TO-220AB / MOSFET N-CH 100V 28A TO-220AB
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 100V, 28A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:100V; On Resistance Rds(on):77mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:28A; Package / Case:TO-220AB; Power Dissipation Pd:150W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:20V
Product Comparison
The three parts on the right have similar specifications to IRF540PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Max Junction Temperature (Tj)
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    Termination
    Dual Supply Voltage
    FET Feature
    View Compare
  • IRF540PBF
    IRF540PBF
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~175°C TJ
    Tube
    2008
    Active
    1 (Unlimited)
    77mOhm
    175°C
    -55°C
    100V
    MOSFET (Metal Oxide)
    28A
    1
    1
    100V
    150W Tc
    Single
    28A
    150W
    11 ns
    N-Channel
    77mOhm @ 17A, 10V
    4V @ 250μA
    1700pF @ 25V
    28A Tc
    72nC @ 10V
    44ns
    100V
    10V
    ±20V
    43 ns
    53 ns
    28A
    4V
    20V
    100V
    1.7nF
    360 ns
    175°C
    77mOhm
    77 mΩ
    4 V
    19.89mm
    10.51mm
    4.7mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • IRF5800TRPBF
    -
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    Micro6™(TSOP-6)
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2010
    Obsolete
    2 (1 Year)
    -
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    -
    2W Ta
    -
    -
    2W
    11.4 ns
    P-Channel
    85mOhm @ 4A, 10V
    1V @ 250μA
    535pF @ 25V
    4A Ta
    17nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    24 ns
    -4A
    -1V
    20V
    -30V
    535pF
    -
    -
    85mOhm
    85 mΩ
    -1 V
    -
    -
    -
    No SVHC
    No
    RoHS Compliant
    Lead Free
    HEXFET®
    SMD/SMT
    -30V
    -
  • IRF5803D2PBF
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    8-SO
    -
    -55°C~150°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    -40V
    MOSFET (Metal Oxide)
    -3.4A
    -
    -
    -
    2W Ta
    -
    -
    2W
    43 ns
    P-Channel
    112mOhm @ 3.4A, 10V
    3V @ 250μA
    1110pF @ 25V
    3.4A Ta
    37nC @ 10V
    550ns
    40V
    4.5V 10V
    ±20V
    50 ns
    88 ns
    -3.4A
    -
    20V
    -40V
    1.11nF
    -
    -
    190mOhm
    112 mΩ
    -
    1.5mm
    5mm
    4mm
    -
    No
    RoHS Compliant
    Lead Free
    FETKY™
    -
    -
    Schottky Diode (Isolated)
  • IRF530NL
    -
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    TO-262
    -
    -55°C~175°C TJ
    Tube
    2002
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3.8W Ta 70W Tc
    -
    -
    -
    -
    N-Channel
    90mOhm @ 9A, 10V
    4V @ 250μA
    920pF @ 25V
    17A Tc
    37nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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