Vishay Siliconix IRF540PBF
- Part Number:
- IRF540PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478393-IRF540PBF
- Description:
- MOSFET N-CH 100V 28A TO-220AB
- Datasheet:
- IRF540PBF
Vishay Siliconix IRF540PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF540PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance77mOhm
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating28A
- Number of Elements1
- Number of Channels1
- Voltage100V
- Power Dissipation-Max150W Tc
- Element ConfigurationSingle
- Current28A
- Power Dissipation150W
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs77mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C28A Tc
- Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
- Rise Time44ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)43 ns
- Turn-Off Delay Time53 ns
- Continuous Drain Current (ID)28A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Input Capacitance1.7nF
- Recovery Time360 ns
- Max Junction Temperature (Tj)175°C
- Drain to Source Resistance77mOhm
- Rds On Max77 mΩ
- Nominal Vgs4 V
- Height19.89mm
- Length10.51mm
- Width4.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF540PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1700pF @ 25V.This device conducts a continuous drain current (ID) of 28A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 53 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 77mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF540PBF Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 77mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)
IRF540PBF Applications
There are a lot of Vishay Siliconix
IRF540PBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1700pF @ 25V.This device conducts a continuous drain current (ID) of 28A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 53 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 77mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF540PBF Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 77mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)
IRF540PBF Applications
There are a lot of Vishay Siliconix
IRF540PBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRF540PBF More Descriptions
Transistor: N-MOSFET; unipolar; 100V; 28A; 0.077ohm; 150W; -55 175 deg.C; THT; TO220
Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220-3
Transistor NPN IRF540/IRF540PBF INTERNATIONAL RECTIFIER RoHS Ampere=28 Volt=100 TO220Halfin
SILICONIX THT MOSFET NFET 100V 28A 77mΩ 175°C TO-220 IRF540-PBF
Trans MOSFET N-CH 100V 28A 3-Pin(3 Tab) TO-220AB / MOSFET N-CH 100V 28A TO-220AB
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 100V, 28A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:100V; On Resistance Rds(on):77mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:28A; Package / Case:TO-220AB; Power Dissipation Pd:150W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:20V
Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220-3
Transistor NPN IRF540/IRF540PBF INTERNATIONAL RECTIFIER RoHS Ampere=28 Volt=100 TO220Halfin
SILICONIX THT MOSFET NFET 100V 28A 77mΩ 175°C TO-220 IRF540-PBF
Trans MOSFET N-CH 100V 28A 3-Pin(3 Tab) TO-220AB / MOSFET N-CH 100V 28A TO-220AB
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 100V, 28A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:100V; On Resistance Rds(on):77mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:28A; Package / Case:TO-220AB; Power Dissipation Pd:150W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:20V
The three parts on the right have similar specifications to IRF540PBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeMax Junction Temperature (Tj)Drain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesTerminationDual Supply VoltageFET FeatureView Compare
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IRF540PBF8 WeeksThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~175°C TJTube2008Active1 (Unlimited)77mOhm175°C-55°C100VMOSFET (Metal Oxide)28A11100V150W TcSingle28A150W11 nsN-Channel77mOhm @ 17A, 10V4V @ 250μA1700pF @ 25V28A Tc72nC @ 10V44ns100V10V±20V43 ns53 ns28A4V20V100V1.7nF360 ns175°C77mOhm77 mΩ4 V19.89mm10.51mm4.7mmUnknownNoROHS3 CompliantLead Free-----
-
-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66Micro6™(TSOP-6)--55°C~150°C TJTape & Reel (TR)2010Obsolete2 (1 Year)-150°C-55°C-MOSFET (Metal Oxide)-1--2W Ta--2W11.4 nsP-Channel85mOhm @ 4A, 10V1V @ 250μA535pF @ 25V4A Ta17nC @ 10V-30V4.5V 10V±20V-24 ns-4A-1V20V-30V535pF--85mOhm85 mΩ-1 V---No SVHCNoRoHS CompliantLead FreeHEXFET®SMD/SMT-30V-
-
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)88-SO--55°C~150°C TJTube2004Obsolete1 (Unlimited)-150°C-55°C-40VMOSFET (Metal Oxide)-3.4A---2W Ta--2W43 nsP-Channel112mOhm @ 3.4A, 10V3V @ 250μA1110pF @ 25V3.4A Ta37nC @ 10V550ns40V4.5V 10V±20V50 ns88 ns-3.4A-20V-40V1.11nF--190mOhm112 mΩ-1.5mm5mm4mm-NoRoHS CompliantLead FreeFETKY™--Schottky Diode (Isolated)
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--Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-TO-262--55°C~175°C TJTube2002Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----3.8W Ta 70W Tc----N-Channel90mOhm @ 9A, 10V4V @ 250μA920pF @ 25V17A Tc37nC @ 10V-100V10V±20V-----------------Non-RoHS Compliant-HEXFET®---
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