Infineon Technologies IRF540NSPBF

Name: IRF540NSPBF
Brand: Infineon Technologies
SKU: 2483121-IRF540NSPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF540NSPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2483121-IRF540NSPBF

Description:: MOSFET N-CH 100V 33A D2PAK

ECAD Model:

Datasheet:: IRF540NSPBF

Specifications

Infineon Technologies IRF540NSPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF540NSPBF.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
130W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
44m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1960pF @ 25V
Current - Continuous Drain (Id) @ 25°C
33A Tc
Gate Charge (Qg) (Max) @ Vgs
71nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
33A
Drain-source On Resistance-Max
0.044Ohm
Pulsed Drain Current-Max (IDM)
110A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
185 mJ
RoHS Status
ROHS3 Compliant

Description

IRF540NSPBF Description
The IRF540NSPBF is a 100V single N-channel Advanced HEXFET? Power MOSFET utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRF540NSPBF Features
Advanced process technology
Ultra-low on-resistance
Dynamic dV/dt rating
Fully avalanche rated
175??C Operating temperature

IRF540NSPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives

IRF540NSPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS /-20
Trans MOSFET N-CH Si 100V 33A 3-Pin(2 Tab) D2PAK Tube / MOSFET N-CH 100V 33A D2PAK
IRF540NSPBF Series 100 V 44 mOhm 33 A SMT HEXFET® Power MOSFET - D2PAK-3
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 3.8 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):44mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
MOSFET, N, 100V, 33A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:33A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Package / Case:D2-PAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:110A; SMD Marking:IRF540NS; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

Product Comparison

The three parts on the right have similar specifications to IRF540NSPBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

FET Feature

Drain to Source Resistance

Rds On Max

Height

Length

Width

Radiation Hardening

Lead Free

View Compare
IRF540NSPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

130W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

44m Ω @ 16A, 10V

4V @ 250μA

1960pF @ 25V

33A Tc

71nC @ 10V

100V

10V

±20V

33A

0.044Ohm

110A

100V

185 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF520NL

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

1998

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

3.8W Ta 48W Tc

-

-

N-Channel

-

200m Ω @ 5.7A, 10V

4V @ 250μA

330pF @ 25V

9.7A Tc

25nC @ 10V

100V

10V

±20V

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF540NSPBF vs IRF520NL
IRF5803D2PBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-55°C~150°C TJ

Tube

FETKY™

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

2W Ta

-

-

P-Channel

-

112mOhm @ 3.4A, 10V

3V @ 250μA

1110pF @ 25V

3.4A Ta

37nC @ 10V

40V

4.5V 10V

±20V

-

-

-

-

-

RoHS Compliant

Surface Mount

8

8-SO

150°C

-55°C

-40V

-3.4A

2W

43 ns

550ns

50 ns

88 ns

-3.4A

20V

-40V

1.11nF

Schottky Diode (Isolated)

190mOhm

112 mΩ

1.5mm

5mm

4mm

No

Lead Free

IRF540NSPBF vs IRF5803D2PBF
IRF5210STRR

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Other Transistors

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 200W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

60m Ω @ 24A, 10V

4V @ 250μA

2700pF @ 25V

40A Tc

180nC @ 10V

100V

10V

±20V

38A

0.06Ohm

140A

100V

120 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF540NSPBF vs IRF5210STRR

Certification

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IRF540NSPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF540NSPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	439	1 $1.0164 10 $0.9078 100 $0.742 500 $0.6669 1000 $0.5256
IRF540NSPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 100V 33A D2PAK RoHS: Compliant	153	1 $1.66 10 $1.471 100 $1.1622 500 $0.90132 1000 $0.71156
IRF540NSPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	17079	29 $0.6552 750 $0.5645
IRF540NSPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	439	15 $0.9078 100 $0.742
IRF540NSPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 33A 3-Pin(2 Tab) D2PAK (Alt RoHS: Compliant	15180	1 $1.1659 10 $0.9939 25 $0.9919 50 $0.9889 100 $0.7589 500 $0.6709 1000 $0.5299
IRF540NSPBF DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 100V, 33A, D2-PAK, Transistor P	106	1 $1.36 10 $1.16 100 $0.887 500 $0.784 1000 $0.698
IRF540NSPBF. DISTI #	Infineon Technologies AG	PLANAR_MOSFETS , ROHS COMPLIANT: YES	0
IRF540NSPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 44 Mil RoHS: Compliant	473	1 $1.22 10 $1.076 100 $0.938 500 $0.813 1000 $0.718
IRF540NSPBF DISTI #	Infineon Technologies AG	MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC RoHS: Compliant	1077	1 $1.36 10 $1.16 100 $0.887 500 $0.784 1000 $0.619
IRF540NSPBF DISTI #	Infineon Technologies AG	IRF540NSPBF Series 100 V 44 mOhm 33 A SMT HEXFET P RoHS: Compliant	1075	20 $0.65 750 $0.56
IRF540NSPBF DISTI #	International Rectifier	RoHS: Not Compliant	565	1 $0.74 25 $0.69 100 $0.66 500 $0.64 1000 $0.6
IRF540NSPBF DISTI #	International Rectifier		438
IRF540NSPBF DISTI #	International Rectifier	33 A, 100 V, 0.044 ohm, N-CHANNEL, Si, POWER, MOSF	70	1 $3.9 4 $2.6 11 $1.95
IRF540NSPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 100V 33A D2PAK, TU	300	50 $0.785 250 $0.667 1000 $0.515 2500 $0.456
IRF540NSPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 100V 33A D2PAK, EA	3186	1 $2 10 $0.84 25 $0.82
IRF540NSPBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 100V, 33A, 3.8	547	1 $0.69 3 $0.65 10 $0.53 100 $0.47
IRF540NSPBF DISTI #	Infineon Technologies AG	N-CH 100V 33A 44mOhm TO263 RoHS: Compliant	400	50 $0.59 150 $0.5563 300 $0.5226 750 $0.472 1000 $0.4552
IRF540NSPBF DISTI #	Infineon Technologies AG	Power Field-EffectTransistor,33AI(D),100V,0.044ohm RoHS: Compliant	723	200 $0.8667 723 $0.8125
IRF540NSPBF DISTI #	INF	RoHS: Compliant	50	1200 $0.7509
IRF540NSPBF DISTI #	Infineon Technologies AG	N-Ch 100V 33A 130W 0,044R DPak RoHS: Compliant	6830	10 $0.653 50 $0.413 200 $0.353 500 $0.34
IRF540NSTRLPBF DISTI #	Infineon Technologies AG	N-Ch 100V 33A 130W 0,044R DPak RoHS: Compliant	1670	10 $0.648 50 $0.408 200 $0.348 500 $0.335
IRF540NSPBF DISTI #	Infineon Technologies AG	MOSFET, N, 100V, 33A, D2-PAK RoHS: Compliant	2740	5 $1.52 25 $1.42 100 $1.21 250 $1.21 500 $1.07 1000 $0.821 5000 $0.805
IRF540NSPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	548	5 $0.663 10 $0.619
IRF540NSPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	17429	5 $1.23 25 $0.9 50 $0.803 100 $0.675 500 $0.606 1000 $0.56
IRF540NSPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	439	10 $0.9035 100 $0.7407
IRF540NSPBF DISTI #	Infineon Technologies AG	MOSFET, N, 100V, 33A, D2-PAK RoHS: Compliant	2191	5 $0.84 25 $0.785 100 $0.671 250 $0.667 500 $0.593

IRF540N~~(15)~~
IRF540~~(40)~~
IRF54~~(46)~~
IRF5~~(66)~~
IRF~~(69)~~

Infineon Technologies IRF540NSPBF

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