Infineon Technologies IRF540NLPBF

Name: IRF540NLPBF
Brand: Infineon Technologies
SKU: 2848910-IRF540NLPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF540NLPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2848910-IRF540NLPBF

Description:: MOSFET N-CH 100V 33A TO-262

ECAD Model:

Datasheet:: IRF540NLPBF

Specifications

Infineon Technologies IRF540NLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF540NLPBF.

Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
44MOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
260
Current Rating
33A
Time@Peak Reflow Temperature-Max (s)
30
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
130W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
130W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
44m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1960pF @ 25V
Current - Continuous Drain (Id) @ 25°C
33A Tc
Gate Charge (Qg) (Max) @ Vgs
71nC @ 10V
Rise Time
35ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
35 ns
Turn-Off Delay Time
39 ns
Continuous Drain Current (ID)
33A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Nominal Vgs
4 V
Height
9.65mm
Length
10.668mm
Width
4.826mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF540NLPBF MOSFET Description
The IRF540 is a power MOSFET intended to drive high current loads. It can handle a maximum load of 23A and a maximum load voltage of 100V DC. It employs trench technology, allowing it to achieve a high level of driving capability. It can be used for switching as well as amplification. This transistor has various advantageous characteristics that make it suitable for use as a switch. Because it can execute high-speed switching, it can be utilized in many applications where you need to swap the load quickly, such as UPS.

IRF540NLPBF MOSFET Features
Planar cell structure for comprehensive SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry-standard through-hole power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered

IRF540NLPBF MOSFET Applications
Motor Driver Applications Computer Related Applications Fast Switching Applications Uninterruptible Power Supplies Solar Battery Chargers Battery Chargers Solar Uninterruptible Power Supplies

IRF540NLPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-262;PD 130W;VGS /-2
Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-262-3
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHSInfineon SCT
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N CHANNEL MOSFET, 100V, 33A, TO-262; Tra; N CHANNEL MOSFET, 100V, 33A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):44mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 33 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 44 / Gate-Source Voltage V = 20 / Fall Time ns = 35 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = I2PAK / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 130

Product Comparison

The three parts on the right have similar specifications to IRF540NLPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

FET Feature

Drain to Source Resistance

Rds On Max

Surface Mount

HTS Code

Terminal Form

JESD-30 Code

Qualification Status

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRF540NLPBF

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

e3

Not For New Designs

1 (Unlimited)

3

EAR99

44MOhm

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

100V

MOSFET (Metal Oxide)

SINGLE

260

33A

30

1

SINGLE WITH BUILT-IN DIODE

130W Tc

ENHANCEMENT MODE

130W

DRAIN

11 ns

N-Channel

SWITCHING

44m Ω @ 16A, 10V

4V @ 250μA

1960pF @ 25V

33A Tc

71nC @ 10V

35ns

10V

±20V

35 ns

39 ns

33A

4V

20V

100V

4 V

9.65mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF520NL

Infineon Technologies

-

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

1998

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

3.8W Ta 48W Tc

-

-

-

-

N-Channel

-

200m Ω @ 5.7A, 10V

4V @ 250μA

330pF @ 25V

9.7A Tc

25nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

100V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF540NLPBF vs IRF520NL
IRF5803D2PBF

Infineon Technologies

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

-55°C~150°C TJ

Tube

FETKY™

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-40V

MOSFET (Metal Oxide)

-

-

-3.4A

-

-

-

2W Ta

-

2W

-

43 ns

P-Channel

-

112mOhm @ 3.4A, 10V

3V @ 250μA

1110pF @ 25V

3.4A Ta

37nC @ 10V

550ns

4.5V 10V

±20V

50 ns

88 ns

-3.4A

-

20V

-40V

-

1.5mm

5mm

4mm

-

No

RoHS Compliant

Lead Free

40V

8-SO

150°C

-55°C

1.11nF

Schottky Diode (Isolated)

190mOhm

112 mΩ

-

-

-

-

-

-

-

-

-

-

IRF540NLPBF vs IRF5803D2PBF
IRF530NS

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2002

e0

Obsolete

1 (Unlimited)

2

EAR99

-

Tin/Lead (Sn/Pb)

AVALANCHE RATED

-

-

MOSFET (Metal Oxide)

SINGLE

225

-

30

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 70W Tc

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

90m Ω @ 9A, 10V

4V @ 250μA

920pF @ 25V

17A Tc

37nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

100V

-

-

-

-

-

-

-

YES

8541.29.00.95

GULL WING

R-PSSO-G2

Not Qualified

17A

0.09Ohm

60A

100V

93 mJ

IRF540NLPBF vs IRF530NS

Certification

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IRF540NLPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF540NLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(3 Tab) TO-262	325	1 $1.0784 10 $0.9651 100 $0.7211 500 $0.55 1000 $0.495
IRF540NLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 100V 33A TO-262 RoHS: Compliant	1620	1 $1.65 10 $1.462 100 $1.1556 500 $0.8962 1000 $0.70752
IRF540NLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(3 Tab) TO-262	1936	50 $0.7781 100 $0.6097 500 $0.6077 1000 $0.6067
IRF540NLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(3 Tab) TO-262	325	14 $0.9651 100 $0.7211
IRF540NLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 33A 3-Pin(3 Tab) TO-262 (Al RoHS: Compliant	800	1 $0.7499 10 $0.6659 25 $0.5999 50 $0.5449 100 $0.4999 500 $0.4609 1000 $0.4279
IRF540NLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 33A 3-Pin(3 Tab) TO-262 - R RoHS: Compliant	0	1 $0.8299 10 $0.7979 25 $0.7959 50 $0.7939 100 $0.6119 500 $0.4959 1000 $0.4459
IRF540NLPBF DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 100V, 33A, TO-262, Transistor P	28	1 $1.41 10 $1.21 100 $0.922 500 $0.815 1000 $0.644
IRF540NLPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 44 Mil RoHS: Compliant	0	700 $2.24
IRF540NLPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 100V 33A 44mOhm 47.3nC RoHS: Compliant	1564	1 $1.41 10 $1.21 100 $0.922 500 $0.815 1000 $0.644
IRF540NLPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL HEXFET 100V 33A TO262, PK	1180	10 $0.938 50 $0.771 250 $0.666 500 $0.589 1250 $0.466
IRF540NLPBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 100V, 33A, 140	357	1 $0.99 3 $0.91 10 $0.76 100 $0.68
IRF540NLPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 100V, 33A, TO-262-3 RoHS: Compliant	745	1 $2.23 10 $1.92 100 $1.46 500 $1.3 1000 $1.02
IRF540NLPBF. DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 100V, 33A, TO-262 RoHS: Compliant	209	1 $0.902
IRF540NLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(3 Tab) TO-262 RoHS: Compliant	1940	5 $1.6 25 $1.17 50 $1.04 100 $0.877 500 $0.788 1000 $0.728
IRF540NLPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 100V, 33A, TO-262-3 RoHS: Compliant	820	5 $0.957 25 $0.786 100 $0.712 250 $0.679 500 $0.601

IRF540N~~(15)~~
IRF540~~(40)~~
IRF54~~(46)~~
IRF5~~(66)~~
IRF~~(69)~~

Infineon Technologies IRF540NLPBF

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