STMicroelectronics IRF540

Name: IRF540
Brand: STMicroelectronics
SKU: 2488475-IRF540
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF540

Manufacturer:: STMicroelectronics

Ventron No:: 2488475-IRF540

Description:: MOSFET N-CH 100V 22A TO-220

ECAD Model:

Datasheet:: IRF540

Specifications

STMicroelectronics IRF540 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF540.

Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
1999
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
150W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
77m Ω @ 17A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.7pF @ 25V
Current - Continuous Drain (Id) @ 25°C
28A Tc
Gate Charge (Qg) (Max) @ Vgs
72nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
28A
Drain-source On Resistance-Max
0.077Ohm
Pulsed Drain Current-Max (IDM)
110A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
230 mJ
RoHS Status
Non-RoHS Compliant

Description

IRF540 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 230 mJ.A device's maximum input capacitance is 1.7pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 28A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 110A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF540 Features
the avalanche energy rating (Eas) is 230 mJ
based on its rated peak drain current 110A.
a 100V drain to source voltage (Vdss)

IRF540 Applications
There are a lot of Rochester Electronics, LLC
IRF540 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

Product Comparison

The three parts on the right have similar specifications to IRF540.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Contact Plating

Mount

Number of Pins

Series

ECCN Code

Resistance

Max Operating Temperature

Min Operating Temperature

Additional Feature

Subcategory

Voltage - Rated DC

Terminal Form

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Supplier Device Package

Input Capacitance

FET Feature

Drain to Source Resistance

Rds On Max

View Compare
IRF540

STMicroelectronics

Through Hole

TO-220-3

NO

SILICON

-55°C~175°C TJ

Tube

1999

e0

no

Obsolete

1 (Unlimited)

3

TIN LEAD

MOSFET (Metal Oxide)

SINGLE

240

unknown

30

R-PSFM-T3

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

150W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

77m Ω @ 17A, 10V

4V @ 250μA

1.7pF @ 25V

28A Tc

72nC @ 10V

100V

10V

±20V

TO-220AB

28A

0.077Ohm

110A

100V

230 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF520NSPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

Tube

2004

e3

-

Discontinued

1 (Unlimited)

2

-

MOSFET (Metal Oxide)

-

260

-

30

R-PSSO-G2

-

1

-

3.8W Ta 48W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

200m Ω @ 5.7A, 10V

4V @ 250μA

330pF @ 25V

9.7A Tc

25nC @ 10V

-

10V

±20V

-

-

-

-

-

-

ROHS3 Compliant

Tin

Surface Mount

3

HEXFET®

EAR99

200mOhm

175°C

-55°C

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

100V

GULL WING

9.7A

Single

48W

4.5 ns

23ns

23 ns

32 ns

9.7A

4V

20V

100V

150 ns

4 V

4.826mm

10.668mm

10.16mm

No SVHC

No

Lead Free

-

-

-

-

-

IRF540 vs IRF520NSPBF
IRF5803D2PBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-55°C~150°C TJ

Tube

2004

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

2W Ta

-

-

P-Channel

-

112mOhm @ 3.4A, 10V

3V @ 250μA

1110pF @ 25V

3.4A Ta

37nC @ 10V

40V

4.5V 10V

±20V

-

-

-

-

-

-

RoHS Compliant

-

Surface Mount

8

FETKY™

-

-

150°C

-55°C

-

-

-40V

-

-3.4A

-

2W

43 ns

550ns

50 ns

88 ns

-3.4A

-

20V

-40V

-

-

1.5mm

5mm

4mm

-

No

Lead Free

8-SO

1.11nF

Schottky Diode (Isolated)

190mOhm

112 mΩ

IRF540 vs IRF5803D2PBF
IRF5305STRR

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

2000

e3

-

Obsolete

1 (Unlimited)

2

Matte Tin (Sn) - with Nickel (Ni) barrier

MOSFET (Metal Oxide)

SINGLE

260

-

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 110W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

60m Ω @ 16A, 10V

4V @ 250μA

1200pF @ 25V

31A Tc

63nC @ 10V

55V

10V

±20V

-

31A

0.06Ohm

110A

55V

280 mJ

Non-RoHS Compliant

-

-

-

HEXFET®

EAR99

-

-

-

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

Other Transistors

-

GULL WING

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF540 vs IRF5305STRR