Infineon Technologies IRF530NPBF
- Part Number:
- IRF530NPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479639-IRF530NPBF
- Description:
- MOSFET N-CH 100V 17A TO-220AB
- ECAD Model:
-
- Datasheet:
- IRF530NPBF
Infineon Technologies IRF530NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF530NPBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2001
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Resistance90MOhm
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)250
- Current Rating17A
- Time@Peak Reflow Temperature-Max (s)30
- Lead Pitch2.54mm
- Number of Elements1
- Power Dissipation-Max70W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation70W
- Case ConnectionDRAIN
- Turn On Delay Time9.2 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs90m Ω @ 9A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds920pF @ 25V
- Current - Continuous Drain (Id) @ 25°C17A Tc
- Gate Charge (Qg) (Max) @ Vgs37nC @ 10V
- Rise Time22ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)17A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Pulsed Drain Current-Max (IDM)60A
- Dual Supply Voltage100V
- Recovery Time140 ns
- Nominal Vgs4 V
- Height8.77mm
- Length10.5156mm
- Width4.69mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF530NPBF Description
International Rectifier's innovative HEXFET Power MOSFETs use cutting-edge processing methods to achieve incredibly low on-resistance per silicon area. This feature offers the designer a highly efficient and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are widely known for. For all commercial and industrial applications with power dissipation levels up to about 50 watts, the TO-220 package is always favored. The TO-220 is widely used in the industry thanks to its low thermal resistance and affordable packaging.
IRF530NPBF Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175??C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
IRF530NPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
International Rectifier's innovative HEXFET Power MOSFETs use cutting-edge processing methods to achieve incredibly low on-resistance per silicon area. This feature offers the designer a highly efficient and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are widely known for. For all commercial and industrial applications with power dissipation levels up to about 50 watts, the TO-220 package is always favored. The TO-220 is widely used in the industry thanks to its low thermal resistance and affordable packaging.
IRF530NPBF Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175??C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
IRF530NPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRF530NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S
Transistor: N-MOSFET; unipolar; 100V; 17A; 0.09ohm; 70W; -55 175 deg.C; THT; TO220
Transistor MOSFET N Channel 100 Volt 17 Amp 3-Pin 3 Tab TO-220AB
Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - TO-220-3
INFINEON THT MOSFET NFET 100V 17A 90mΩ 175°C TO-220 IRF530NPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Transistor MOSFET N-Ch. 17A/100V TO220 IRF 530 N PBF
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
Transistor: N-MOSFET; unipolar; 100V; 17A; 0.09ohm; 70W; -55 175 deg.C; THT; TO220
Transistor MOSFET N Channel 100 Volt 17 Amp 3-Pin 3 Tab TO-220AB
Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - TO-220-3
INFINEON THT MOSFET NFET 100V 17A 90mΩ 175°C TO-220 IRF530NPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Transistor MOSFET N-Ch. 17A/100V TO220 IRF 530 N PBF
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
The three parts on the right have similar specifications to IRF530NPBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Lead PitchNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)Max Operating TemperatureMin Operating TemperatureTerminal FormJESD-30 CodeThreshold VoltageSurface MountTerminal FinishTerminal PositionQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRF530NPBF12 WeeksTinThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2001e3Active1 (Unlimited)3Through HoleEAR9990MOhmAVALANCHE RATED, HIGH RELIABILITYFET General Purpose Power100VMOSFET (Metal Oxide)25017A302.54mm170W TcSingleENHANCEMENT MODE70WDRAIN9.2 nsN-ChannelSWITCHING90m Ω @ 9A, 10V4V @ 250μA920pF @ 25V17A Tc37nC @ 10V22ns10V±20V25 ns35 ns17ATO-220AB20V100V60A100V140 ns4 V8.77mm10.5156mm4.69mmNo SVHCNoROHS3 CompliantLead Free---------------- -
---Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTubeHEXFET®1998-Obsolete1 (Unlimited)-------MOSFET (Metal Oxide)-----3.8W Ta 48W Tc-----N-Channel-200m Ω @ 5.7A, 10V4V @ 250μA330pF @ 25V9.7A Tc25nC @ 10V-10V±20V---------------Non-RoHS Compliant-100V--------------
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-TinSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--TubeHEXFET®2004e3Discontinued1 (Unlimited)2-EAR99200mOhmAVALANCHE RATED, HIGH RELIABILITYFET General Purpose Power100VMOSFET (Metal Oxide)2609.7A30-13.8W Ta 48W TcSingleENHANCEMENT MODE48WDRAIN4.5 nsN-ChannelSWITCHING200m Ω @ 5.7A, 10V4V @ 250μA330pF @ 25V9.7A Tc25nC @ 10V23ns10V±20V23 ns32 ns9.7A-20V100V--150 ns4 V4.826mm10.668mm10.16mmNo SVHCNoROHS3 CompliantLead Free-175°C-55°CGULL WINGR-PSSO-G24V---------
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---Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®1998e3Obsolete1 (Unlimited)2-EAR99-HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCEOther Transistors-MOSFET (Metal Oxide)260-30-13.8W Ta 200W Tc-ENHANCEMENT MODE-DRAIN-P-ChannelSWITCHING60m Ω @ 24A, 10V4V @ 250μA2700pF @ 25V40A Tc180nC @ 10V-10V±20V------140A--------Non-RoHS Compliant-100V--GULL WINGR-PSSO-G2-YESMatte Tin (Sn) - with Nickel (Ni) barrierSINGLENot QualifiedSINGLE WITH BUILT-IN DIODE38A0.06Ohm100V120 mJ
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