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IRF5305STRRPBF

Infineon Technologies IRF5305STRRPBF

Part Number:
IRF5305STRRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2489090-IRF5305STRRPBF
Description:
MOSFET P-CH 55V 31A D2PAK
ECAD Model:
Datasheet:
IRF5305STRRPBF

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Specifications
Infineon Technologies IRF5305STRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF5305STRRPBF.
  • Factory Lead Time
    10 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2005
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    3.8W Ta 110W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    60m Ω @ 16A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1200pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    31A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    63nC @ 10V
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    31A
  • Drain-source On Resistance-Max
    0.06Ohm
  • Pulsed Drain Current-Max (IDM)
    110A
  • DS Breakdown Voltage-Min
    55V
  • Avalanche Energy Rating (Eas)
    280 mJ
  • RoHS Status
    ROHS3 Compliant
Description
IRF5305STRRPBF Description
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. The D2Pak is a surface mount power package that can fit die up to HEX-4 in size. It has the highest power capabilities and the lowest on-resistance of any surface mount package currently available. Because of its low internal connection resistance, the D2Pak is appropriate for high current applications and can dissipate up to 2.01N in a typical surface mount application. For low-profile applications, the through-hole variant (IRF5305L) is offered.
IRF5305STRRPBF Features
Lead-Free
P-Channel
Fast Switching
Fully Avalanche Rated
Surface Mount (I RF5305S)
Advanced Process Technology
175°C Operating Temperature
Low-profile through-hole (IR F5305L)

IRF5305STRRPBF Applications
Power Management

IRF5305STRRPBF More Descriptions
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Single P-Channel 55 V 60 mOhm 42 nC HEXFET® Power Mosfet - D2PAK
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-31A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2PAK ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRF5305STRRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Supplier Device Package
    Contact Plating
    Mount
    Number of Pins
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    View Compare
  • IRF5305STRRPBF
    IRF5305STRRPBF
    Infineon Technologies
    10 Weeks
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2005
    e3
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    3.8W Ta 110W Tc
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    60m Ω @ 16A, 10V
    4V @ 250μA
    1200pF @ 25V
    31A Tc
    63nC @ 10V
    55V
    10V
    ±20V
    31A
    0.06Ohm
    110A
    55V
    280 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF520NSTRRPBF
    IRF520NSTRRPBF
    Infineon Technologies
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    3.8W Ta 48W Tc
    -
    -
    N-Channel
    -
    200mOhm @ 5.7A, 10V
    4V @ 250μA
    330pF @ 25V
    9.7A Tc
    25nC @ 10V
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    D2PAK
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF5305STRRPBF vs IRF520NSTRRPBF
  • IRF520NSPBF
    IRF520NSPBF
    Infineon Technologies
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    Tube
    HEXFET®
    2004
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    -
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    30
    R-PSSO-G2
    -
    1
    -
    3.8W Ta 48W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    200m Ω @ 5.7A, 10V
    4V @ 250μA
    330pF @ 25V
    9.7A Tc
    25nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Tin
    Surface Mount
    3
    200mOhm
    175°C
    -55°C
    100V
    9.7A
    Single
    48W
    4.5 ns
    23ns
    23 ns
    32 ns
    9.7A
    4V
    20V
    100V
    150 ns
    4 V
    4.826mm
    10.668mm
    10.16mm
    No SVHC
    No
    Lead Free
    IRF5305STRRPBF vs IRF520NSPBF
  • IRF5210STRR
    IRF5210STRR
    Infineon Technologies
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
    Other Transistors
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    3.8W Ta 200W Tc
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    60m Ω @ 24A, 10V
    4V @ 250μA
    2700pF @ 25V
    40A Tc
    180nC @ 10V
    100V
    10V
    ±20V
    38A
    0.06Ohm
    140A
    100V
    120 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF5305STRRPBF vs IRF5210STRR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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