STMicroelectronics IRF530

Name: IRF530
Brand: STMicroelectronics
SKU: 2488454-IRF530
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF530

Manufacturer:: STMicroelectronics

Ventron No:: 2488454-IRF530

Description:: MOSFET N-CH 100V 14A TO-220

ECAD Model:

Datasheet:: IRF530

Specifications

STMicroelectronics IRF530 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF530.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
14A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IRF5
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
60W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
60W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
160m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
458pF @ 25V
Current - Continuous Drain (Id) @ 25°C
14A Tc
Gate Charge (Qg) (Max) @ Vgs
21nC @ 10V
Rise Time
25ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
14A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
56A
Avalanche Energy Rating (Eas)
70 mJ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

IRF530 Description
The IRF530 is an N-channel MOSFET that is intended for high-speed and high-power applications. It can withstand 14 A of continuous current and 100 V of voltage. It can drive a load of up to 56 A in pulse mode. Other transistors in this series with somewhat different specs are available, such as IRF531, IRF532, and IRF533.

IRF530 Features
Dynamic dv/dt rating
Fast switching
Ease of paralleling
The required simple drive circuit
Repetitive avalanche rated
Maximum Drain-to-source voltage VDS: 100V
Maximum continuous drain current ID: 14A
Pulse drain current: 56A
Maximum power dissipation: 88W
Maximum gate-to-source voltage: ±20V
Peak diode recovery dv/dt: 5.5V/ns
On-state resistance: 0.16Ω
Total gate charge Qg: 26nC
Operating junction and storage temperature range: -55?C to 175?C
Package: TO-220AB
Transistor Polarity: N-channel

IRF530 Applications
Battery management system and battery chargers
Motor drives
Solar power supply applications
UPS
DC-DC and DC-AC Converters
Regulators
Audio amplifier
Solenoid and relay drivers

Product Comparison

The three parts on the right have similar specifications to IRF530.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Supplier Device Package

Published

Drain to Source Voltage (Vdss)

Contact Plating

Number of Pins

Resistance

Max Operating Temperature

Min Operating Temperature

Additional Feature

Terminal Form

Case Connection

Turn On Delay Time

Threshold Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

View Compare
IRF530

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

100V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

14A

NOT SPECIFIED

IRF5

3

R-PSFM-T3

Not Qualified

1

60W Tc

Single

ENHANCEMENT MODE

60W

N-Channel

SWITCHING

160m Ω @ 7A, 10V

4V @ 250μA

458pF @ 25V

14A Tc

21nC @ 10V

25ns

10V

±20V

8 ns

32 ns

14A

TO-220AB

20V

100V

56A

70 mJ

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF520NSTRRPBF

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

3.8W Ta 48W Tc

-

-

-

N-Channel

-

200mOhm @ 5.7A, 10V

4V @ 250μA

330pF @ 25V

9.7A Tc

25nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

D2PAK

2004

100V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF530 vs IRF520NSTRRPBF
IRF520NSPBF

Infineon Technologies

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

Tube

HEXFET®

e3

Discontinued

1 (Unlimited)

2

EAR99

-

FET General Purpose Power

100V

MOSFET (Metal Oxide)

260

-

9.7A

30

-

-

R-PSSO-G2

-

1

3.8W Ta 48W Tc

Single

ENHANCEMENT MODE

48W

N-Channel

SWITCHING

200m Ω @ 5.7A, 10V

4V @ 250μA

330pF @ 25V

9.7A Tc

25nC @ 10V

23ns

10V

±20V

23 ns

32 ns

9.7A

-

20V

100V

-

-

ROHS3 Compliant

Lead Free

-

2004

-

Tin

3

200mOhm

175°C

-55°C

AVALANCHE RATED, HIGH RELIABILITY

GULL WING

DRAIN

4.5 ns

4V

150 ns

4 V

4.826mm

10.668mm

10.16mm

No SVHC

No

IRF530 vs IRF520NSPBF
IRF530NL

Infineon Technologies

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-55°C~175°C TJ

Tube

HEXFET®

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

3.8W Ta 70W Tc

-

-

-

N-Channel

-

90mOhm @ 9A, 10V

4V @ 250μA

920pF @ 25V

17A Tc

37nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

TO-262

2002

100V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF530 vs IRF530NL