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IRF5210STRLPBF

Infineon Technologies IRF5210STRLPBF

Part Number:
IRF5210STRLPBF
Manufacturer:
Infineon Technologies
Ventron No:
2479820-IRF5210STRLPBF
Description:
MOSFET P-CH 100V 38A D2PAK
ECAD Model:
Datasheet:
IRF5210STRLPBF

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Specifications
Infineon Technologies IRF5210STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF5210STRLPBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    1998
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    60mOhm
  • Additional Feature
    HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -40A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.1W Ta 170W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.8W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    14 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    60m Ω @ 38A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2780pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    38A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    230nC @ 10V
  • Rise Time
    63ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    55 ns
  • Turn-Off Delay Time
    72 ns
  • Continuous Drain Current (ID)
    -40A
  • Threshold Voltage
    -4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -100V
  • Dual Supply Voltage
    100V
  • Recovery Time
    260 ns
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -4 V
  • Height
    4.83mm
  • Length
    10.668mm
  • Width
    9.65mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
IRF5210STRLPBF Description IRF5210STRLPBF power MOSFETs are made with proven silicon methods and can be used in a variety of applications including DC motors, inverters, SMPS, lights, load switches, and battery-powered applications. For ease of design, the IRF5210STRLPBF is offered in a variety of surface mount and through-hole packages with industry-standard footprints.
IRF5210STRLPBF Features Advanced Process Technology
Ultra-Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Some Parameters are Different from IRF5210S/L
P-Channel
Lead-Free
IRF5210STRLPBF Applications Switching applications
Industrial: Aerospace & defense/Appliances/Building automation/Electronic point of sale (EPOS)/Factory automation & control/Grid infrastructure/Industrial transport (non-car & non-light truck)/Lighting/Medical/Motor drives/Power delivery/Pro audio, video & signage/Test & measurement
Enterprise systems: Datacenter & enterprise computing/Enterprise machine/Enterprise projectors
Personal electronics: Connected peripherals & printers/Data storage/Gaming/Home theater & entertainment/Mobile phones/PC & notebooks/Portable electronics/Tablets/TV/Wearables (non-medical)


IRF5210STRLPBF More Descriptions
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 60 Milliohms;ID -38A;D2Pak;PD 170W;-55degc
Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - D2PAK
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET P-CH 100V 38A 3-Pin (2 Tab) D2PAK T/R
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-40A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-4V ;RoHS Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 38 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 20 / Fall Time ns = 55 / Rise Time ns = 63 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 170
Product Comparison
The three parts on the right have similar specifications to IRF5210STRLPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    FET Feature
    Drain to Source Resistance
    Rds On Max
    Surface Mount
    Terminal Finish
    HTS Code
    Terminal Position
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRF5210STRLPBF
    IRF5210STRLPBF
    Infineon Technologies
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    e3
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    60mOhm
    HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
    Other Transistors
    -100V
    MOSFET (Metal Oxide)
    GULL WING
    260
    -40A
    30
    R-PSSO-G2
    1
    1
    3.1W Ta 170W Tc
    Single
    ENHANCEMENT MODE
    3.8W
    DRAIN
    14 ns
    P-Channel
    SWITCHING
    60m Ω @ 38A, 10V
    4V @ 250μA
    2780pF @ 25V
    38A Tc
    230nC @ 10V
    63ns
    10V
    ±20V
    55 ns
    72 ns
    -40A
    -4V
    20V
    -100V
    100V
    260 ns
    150°C
    -4 V
    4.83mm
    10.668mm
    9.65mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF5803D2PBF
    IRF5803D2PBF
    Infineon Technologies
    -
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -55°C~150°C TJ
    Tube
    FETKY™
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -40V
    MOSFET (Metal Oxide)
    -
    -
    -3.4A
    -
    -
    -
    -
    2W Ta
    -
    -
    2W
    -
    43 ns
    P-Channel
    -
    112mOhm @ 3.4A, 10V
    3V @ 250μA
    1110pF @ 25V
    3.4A Ta
    37nC @ 10V
    550ns
    4.5V 10V
    ±20V
    50 ns
    88 ns
    -3.4A
    -
    20V
    -40V
    -
    -
    -
    -
    1.5mm
    5mm
    4mm
    -
    No
    RoHS Compliant
    Lead Free
    8-SO
    150°C
    -55°C
    40V
    1.11nF
    Schottky Diode (Isolated)
    190mOhm
    112 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF5210STRLPBF vs IRF5803D2PBF
  • IRF530NL
    IRF530NL
    Infineon Technologies
    -
    -
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2002
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    3.8W Ta 70W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    90mOhm @ 9A, 10V
    4V @ 250μA
    920pF @ 25V
    17A Tc
    37nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    TO-262
    -
    -
    100V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF5210STRLPBF vs IRF530NL
  • IRF530NS
    IRF530NS
    Infineon Technologies
    -
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2002
    e0
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    -
    AVALANCHE RATED
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    225
    -
    30
    R-PSSO-G2
    1
    -
    3.8W Ta 70W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    90m Ω @ 9A, 10V
    4V @ 250μA
    920pF @ 25V
    17A Tc
    37nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    100V
    -
    -
    -
    -
    YES
    Tin/Lead (Sn/Pb)
    8541.29.00.95
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    17A
    0.09Ohm
    60A
    100V
    93 mJ
    IRF5210STRLPBF vs IRF530NS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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