Infineon Technologies IRF520N
- Part Number:
- IRF520N
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492422-IRF520N
- Description:
- MOSFET N-CH 100V 9.7A TO-220AB
- ECAD Model:
-
- Datasheet:
- IRF520N
Infineon Technologies IRF520N technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF520N.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1995
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max48W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs200m Ω @ 5.7A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds330pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9.7A Tc
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)9.7A
- Drain-source On Resistance-Max0.2Ohm
- Pulsed Drain Current-Max (IDM)38A
- DS Breakdown Voltage-Min100V
- Avalanche Energy Rating (Eas)91 mJ
- RoHS StatusNon-RoHS Compliant
IRF520N Description
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. At power dissipation values of around 50 watts, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220's low heat resistance and low packaging cost contribute to its widespread use in the industry.
IRF520N Features
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
IRF520N Applications
General-purpose amplifier
Switching applications
Power management
Industrial
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. At power dissipation values of around 50 watts, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220's low heat resistance and low packaging cost contribute to its widespread use in the industry.
IRF520N Features
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
IRF520N Applications
General-purpose amplifier
Switching applications
Power management
Industrial
The three parts on the right have similar specifications to IRF520N.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSupplier Device PackageMountNumber of PinsMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceFET FeatureDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningLead FreeJESD-609 CodeTerminal FinishHTS CodeTerminal FormView Compare
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IRF520NThrough HoleTO-220-3NOSILICON-55°C~175°C TJTubeHEXFET®1995Obsolete1 (Unlimited)3EAR99HIGH RELIABILITYMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODE48W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING200m Ω @ 5.7A, 10V4V @ 250μA330pF @ 25V9.7A Tc25nC @ 10V100V10V±20VTO-220AB9.7A0.2Ohm38A100V91 mJNon-RoHS Compliant----------------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-------3.8W Ta 48W Tc--N-Channel-200mOhm @ 5.7A, 10V4V @ 250μA330pF @ 25V9.7A Tc25nC @ 10V100V10V±20V-------D2PAK---------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)---55°C~150°C TJTubeFETKY™2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-------2W Ta--P-Channel-112mOhm @ 3.4A, 10V3V @ 250μA1110pF @ 25V3.4A Ta37nC @ 10V40V4.5V 10V±20V------RoHS Compliant8-SOSurface Mount8150°C-55°C-40V-3.4A2W43 ns550ns50 ns88 ns-3.4A20V-40V1.11nFSchottky Diode (Isolated)190mOhm112 mΩ1.5mm5mm4mmNoLead Free----
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTubeHEXFET®2002Obsolete1 (Unlimited)2EAR99AVALANCHE RATEDMOSFET (Metal Oxide)SINGLE22530R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE3.8W Ta 70W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING90m Ω @ 9A, 10V4V @ 250μA920pF @ 25V17A Tc37nC @ 10V100V10V±20V-17A0.09Ohm60A100V93 mJNon-RoHS Compliant------------------------e0Tin/Lead (Sn/Pb)8541.29.00.95GULL WING
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