IRF510S

Vishay Siliconix IRF510S

Part Number:
IRF510S
Manufacturer:
Vishay Siliconix
Ventron No:
2488323-IRF510S
Description:
MOSFET N-CH 100V 5.6A D2PAK
ECAD Model:
Datasheet:
IRF510S

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Specifications
Vishay Siliconix IRF510S technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF510S.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    D2PAK
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    5.6A
  • Number of Channels
    1
  • Power Dissipation-Max
    3.7W Ta 43W Tc
  • Element Configuration
    Single
  • Power Dissipation
    43W
  • Turn On Delay Time
    6.9 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    540mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    180pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5.6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    8.3nC @ 10V
  • Rise Time
    16ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    9.4 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    5.6A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance
    180pF
  • Drain to Source Resistance
    540mOhm
  • Rds On Max
    540 mΩ
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRF510S Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 180pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 15 ns.This device has a drain-to-source resistance of 540mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.9 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRF510S Features
a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)


IRF510S Applications
There are a lot of Vishay Siliconix
IRF510S applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF510S More Descriptions
MOSFET N-CH 100V 5.6A D2PAK
OEMs, CMs ONLY (NO BROKERS)
MOSFET, N D2-PAK; Transistor type:MOSFET; Current, Id cont:5.6A; Resistance, Rds on:0.54ohm; Case style:TO-263 (D2-Pak); Current, Idm pulse:20A; Marking, SMD:IRF510S; Power dissipation:43W; Power dissipation, on 1" sq. pcb:3.7W; Power, Pd:43W; Resistance, Rds on max:0.54ohm; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Voltage, Vds:100V; Voltage, Vds max:100V; Voltage, Vgs th max:4V
Product Comparison
The three parts on the right have similar specifications to IRF510S.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    Published
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    HTS Code
    View Compare
  • IRF510S
    IRF510S
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    100V
    MOSFET (Metal Oxide)
    5.6A
    1
    3.7W Ta 43W Tc
    Single
    43W
    6.9 ns
    N-Channel
    540mOhm @ 3.4A, 10V
    4V @ 250μA
    180pF @ 25V
    5.6A Tc
    8.3nC @ 10V
    16ns
    100V
    10V
    ±20V
    9.4 ns
    15 ns
    5.6A
    20V
    100V
    180pF
    540mOhm
    540 mΩ
    4.83mm
    10.67mm
    9.65mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF5210STRR
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    3.8W Ta 200W Tc
    -
    -
    -
    P-Channel
    60m Ω @ 24A, 10V
    4V @ 250μA
    2700pF @ 25V
    40A Tc
    180nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    HEXFET®
    1998
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
    Other Transistors
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    38A
    0.06Ohm
    140A
    100V
    120 mJ
    -
  • IRF5305STRR
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    3.8W Ta 110W Tc
    -
    -
    -
    P-Channel
    60m Ω @ 16A, 10V
    4V @ 250μA
    1200pF @ 25V
    31A Tc
    63nC @ 10V
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    HEXFET®
    2000
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
    Other Transistors
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    31A
    0.06Ohm
    110A
    55V
    280 mJ
    -
  • IRF530NS
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    3.8W Ta 70W Tc
    -
    -
    -
    N-Channel
    90m Ω @ 9A, 10V
    4V @ 250μA
    920pF @ 25V
    17A Tc
    37nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    HEXFET®
    2002
    e0
    2
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED
    -
    SINGLE
    GULL WING
    225
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    17A
    0.09Ohm
    60A
    100V
    93 mJ
    8541.29.00.95
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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