Vishay Siliconix IRF510S
- Part Number:
- IRF510S
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488323-IRF510S
- Description:
- MOSFET N-CH 100V 5.6A D2PAK
- Datasheet:
- IRF510S
Vishay Siliconix IRF510S technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF510S.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Weight1.437803g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating5.6A
- Number of Channels1
- Power Dissipation-Max3.7W Ta 43W Tc
- Element ConfigurationSingle
- Power Dissipation43W
- Turn On Delay Time6.9 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs540mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds180pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.6A Tc
- Gate Charge (Qg) (Max) @ Vgs8.3nC @ 10V
- Rise Time16ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)9.4 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)5.6A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Input Capacitance180pF
- Drain to Source Resistance540mOhm
- Rds On Max540 mΩ
- Height4.83mm
- Length10.67mm
- Width9.65mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF510S Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 180pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 15 ns.This device has a drain-to-source resistance of 540mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.9 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF510S Features
a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRF510S Applications
There are a lot of Vishay Siliconix
IRF510S applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 180pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 15 ns.This device has a drain-to-source resistance of 540mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.9 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF510S Features
a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRF510S Applications
There are a lot of Vishay Siliconix
IRF510S applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF510S More Descriptions
MOSFET N-CH 100V 5.6A D2PAK
OEMs, CMs ONLY (NO BROKERS)
MOSFET, N D2-PAK; Transistor type:MOSFET; Current, Id cont:5.6A; Resistance, Rds on:0.54ohm; Case style:TO-263 (D2-Pak); Current, Idm pulse:20A; Marking, SMD:IRF510S; Power dissipation:43W; Power dissipation, on 1" sq. pcb:3.7W; Power, Pd:43W; Resistance, Rds on max:0.54ohm; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Voltage, Vds:100V; Voltage, Vds max:100V; Voltage, Vgs th max:4V
OEMs, CMs ONLY (NO BROKERS)
MOSFET, N D2-PAK; Transistor type:MOSFET; Current, Id cont:5.6A; Resistance, Rds on:0.54ohm; Case style:TO-263 (D2-Pak); Current, Idm pulse:20A; Marking, SMD:IRF510S; Power dissipation:43W; Power dissipation, on 1" sq. pcb:3.7W; Power, Pd:43W; Resistance, Rds on max:0.54ohm; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Voltage, Vds:100V; Voltage, Vds max:100V; Voltage, Vgs th max:4V
The three parts on the right have similar specifications to IRF510S.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)HTS CodeView Compare
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IRF510SSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~175°C TJTubeObsolete1 (Unlimited)175°C-55°C100VMOSFET (Metal Oxide)5.6A13.7W Ta 43W TcSingle43W6.9 nsN-Channel540mOhm @ 3.4A, 10V4V @ 250μA180pF @ 25V5.6A Tc8.3nC @ 10V16ns100V10V±20V9.4 ns15 ns5.6A20V100V180pF540mOhm540 mΩ4.83mm10.67mm9.65mmNon-RoHS CompliantContains Lead----------------------------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--3.8W Ta 200W Tc---P-Channel60m Ω @ 24A, 10V4V @ 250μA2700pF @ 25V40A Tc180nC @ 10V-100V10V±20V-----------Non-RoHS Compliant-YESSILICONHEXFET®1998e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierHIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCEOther TransistorsSINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING38A0.06Ohm140A100V120 mJ-
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--3.8W Ta 110W Tc---P-Channel60m Ω @ 16A, 10V4V @ 250μA1200pF @ 25V31A Tc63nC @ 10V-55V10V±20V-----------Non-RoHS Compliant-YESSILICONHEXFET®2000e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierLOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITYOther TransistorsSINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING31A0.06Ohm110A55V280 mJ-
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~175°C TJTubeObsolete1 (Unlimited)---MOSFET (Metal Oxide)--3.8W Ta 70W Tc---N-Channel90m Ω @ 9A, 10V4V @ 250μA920pF @ 25V17A Tc37nC @ 10V-100V10V±20V-----------Non-RoHS Compliant-YESSILICONHEXFET®2002e02EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED-SINGLEGULL WING22530R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING17A0.09Ohm60A100V93 mJ8541.29.00.95
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