Vishay Siliconix IRF510PBF

Name: IRF510PBF
Brand: Vishay Siliconix
SKU: 2478743-IRF510PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF510PBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2478743-IRF510PBF

Description:: MOSFET N-CH 100V 5.6A TO-220AB

ECAD Model:

Datasheet:: IRF510PBF

Specifications

Vishay Siliconix IRF510PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF510PBF.

Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Weight
6.000006g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2011
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
540mOhm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
5.6A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
43W Tc
Element Configuration
Single
Power Dissipation
43W
Turn On Delay Time
6.9 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
180pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5.6A Tc
Gate Charge (Qg) (Max) @ Vgs
8.3nC @ 10V
Rise Time
16ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
9.4 ns
Turn-Off Delay Time
15 ns
Continuous Drain Current (ID)
5.6A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Input Capacitance
180pF
Recovery Time
200 ns
Drain to Source Resistance
540mOhm
Rds On Max
540 mΩ
Nominal Vgs
4 V
Height
9.01mm
Length
10.41mm
Width
4.7mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF510PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 180pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 5.6A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 540mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.9 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IRF510PBF Features
a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)

IRF510PBF Applications
There are a lot of Vishay Siliconix
IRF510PBF applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

IRF510PBF More Descriptions

Single N-Channel 100 V 0.54 Ohms Flange Mount Power Mosfet - TO-220-3
SILICONIX THT MOSFET NFET 100V 5,6A 540mΩ 175°C TO-220 IRF510PBF
Trans MOSFET N-CH 100V 5.6A 3-Pin (3 Tab) TO-220AB
MOSFET N-CH 100V 5.6A TO-220AB | Siliconix / Vishay IRF510PBF
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 100V, 5.6A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 43W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 5.6A; Junction to Case Thermal Resistance A: 3.5°C/W; Pulse Current Idm: 20A; Termination Type: Through Hole; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to IRF510PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Recovery Time

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

FET Feature

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

HTS Code

View Compare
IRF510PBF

Vishay Siliconix

8 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

TO-220AB

6.000006g

-55°C~175°C TJ

Tube

2011

Active

1 (Unlimited)

540mOhm

175°C

-55°C

100V

MOSFET (Metal Oxide)

5.6A

1

1

43W Tc

Single

43W

6.9 ns

N-Channel

540mOhm @ 3.4A, 10V

4V @ 250μA

180pF @ 25V

5.6A Tc

8.3nC @ 10V

16ns

100V

10V

±20V

9.4 ns

15 ns

5.6A

4V

20V

100V

180pF

200 ns

540mOhm

540 mΩ

4 V

9.01mm

10.41mm

4.7mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF5803D2PBF

Infineon Technologies

-

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

8-SO

-

-55°C~150°C TJ

Tube

2004

Obsolete

1 (Unlimited)

-

150°C

-55°C

-40V

MOSFET (Metal Oxide)

-3.4A

-

-

2W Ta

-

2W

43 ns

P-Channel

112mOhm @ 3.4A, 10V

3V @ 250μA

1110pF @ 25V

3.4A Ta

37nC @ 10V

550ns

40V

4.5V 10V

±20V

50 ns

88 ns

-3.4A

-

20V

-40V

1.11nF

-

190mOhm

112 mΩ

-

1.5mm

5mm

4mm

-

No

RoHS Compliant

Lead Free

FETKY™

Schottky Diode (Isolated)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF510PBF vs IRF5803D2PBF
IRF5210STRR

Infineon Technologies

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

1998

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

1

-

3.8W Ta 200W Tc

-

-

-

P-Channel

60m Ω @ 24A, 10V

4V @ 250μA

2700pF @ 25V

40A Tc

180nC @ 10V

-

100V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

HEXFET®

-

YES

SILICON

e3

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Other Transistors

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

38A

0.06Ohm

140A

100V

120 mJ

-

IRF510PBF vs IRF5210STRR
IRF530NS

Infineon Technologies

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-55°C~175°C TJ

Tube

2002

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

1

-

3.8W Ta 70W Tc

-

-

-

N-Channel

90m Ω @ 9A, 10V

4V @ 250μA

920pF @ 25V

17A Tc

37nC @ 10V

-

100V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

HEXFET®

-

YES

SILICON

e0

2

EAR99

Tin/Lead (Sn/Pb)

AVALANCHE RATED

-

SINGLE

GULL WING

225

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

17A

0.09Ohm

60A

100V

93 mJ

8541.29.00.95

IRF510PBF vs IRF530NS

Certification

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IRF510PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF510PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	3326	1 $0.7951 10 $0.6559 100 $0.5076 500 $0.4349 1000 $0.3444 2500 $0.3043 5000 $0.304 10000 $0.293
IRF510PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	771	1 $0.7951 10 $0.6559 100 $0.5076 500 $0.4349 1000 $0.3444 2500 $0.3043 5000 $0.304 10000 $0.293
IRF510PBF DISTI #	Vishay Siliconix	MOSFET N-CH 100V 5.6A TO-220AB RoHS: Compliant	7491	1 $1.03 50 $0.8214 100 $0.7188 500 $0.5574 1000 $0.44006
IRF510PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	3326	23 $0.6559 100 $0.5076 500 $0.4349 1000 $0.3444 2500 $0.3043
IRF510PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	2588	7 $4.1055 10 $0.7829 50 $0.6082 100 $0.5291 250 $0.4743
IRF510PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	771	21 $0.6559 100 $0.5076 500 $0.4349
IRF510PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	768	100 $0.3397 500 $0.333 1000 $0.3244
IRF510PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB RoHS: Not Compliant	22567	1 $0.3869 10 $0.3779 25 $0.3689 50 $0.3539 100 $0.3369 500 $0.3299 1000 $0.3219
IRF510PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0
IRF510PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB RoHS: Not Compliant	0	1 $1.1 10 $0.877 25 $0.806 50 $0.736 100 $0.672 500 $0.631 1000 $0.599
IRF510PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB RoHS: Not Compliant	0	1 $0.92 10 $0.731 25 $0.672 50 $0.613 100 $0.56 500 $0.526 1000 $0.499
IRF510PBF DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 5.6A TO-220, Transistor P	803	1 $0.92 10 $0.731 25 $0.672 50 $0.613 100 $0.56 500 $0.526 1000 $0.499 2500 $0.484
IRF510PBF DISTI #	Vishay Intertechnologies	VISIRF510PBF	2800	1 $0.92 10 $0.731 25 $0.672 50 $0.613 100 $0.56 500 $0.526 1000 $0.499 2500 $0.484
IRF510PBF. DISTI #	Vishay Intertechnologies	MOSFET N-CHANNEL 100V	22567	1 $1.01 10 $0.804 25 $0.349 50 $0.339 100 $0.33 500 $0.321 1000 $0.312
IRF510PBF DISTI #	Vishay Intertechnologies	MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.54Oh RoHS: Compliant	360	1 $0.807 25 $0.768 100 $0.728 250 $0.688 500 $0.658
IRF510PBF DISTI #	Vishay Siliconix	MOSFET N-CH 100V 5.6A TO-220AB RoHS: Compliant	0	1000 $2.02 2000 $1.561 4000 $1.341
IRF510PBF DISTI #	Vishay Intertechnologies	Single N-Channel 100 V 0.54 Ohms Flange Mount Powe RoHS: Compliant	16350	20 $0.5 250 $0.45 1250 $0.39
IRF510PBF DISTI #	Vishay Intertechnologies	MOSFET N-Chan 100V 5.6 Amp RoHS: Compliant	9752	1 $0.92 10 $0.731 100 $0.554 500 $0.458 1000 $0.367 2500 $0.332 5000 $0.31 10000 $0.298 25000 $0.287
IRF510SPBF DISTI #	Vishay Intertechnologies	MOSFET N-Chan 100V 5.6 Amp RoHS: Compliant	741	1 $1.24 10 $1.02 100 $0.779 500 $0.67 1000 $0.529 2000 $0.494 5000 $0.469 10000 $0.451
IRF510PBF DISTI #	Vishay Intertechnologies	MOSFET N-CHANNEL 100V 5.6A TO220AB, TU	550	50 $0.539 250 $0.458 1000 $0.409 2500 $0.394
IRF510PBF DISTI #	Vishay Intertechnologies	MOSFET N-CHANNEL 100V 5.6A TO220AB, TU	1169	100 $0.481 250 $0.424 1000 $0.368
IRF510PBF DISTI #	Vishay Intertechnologies	MOSFET N-CHANNEL 100V 5.6A TO220AB, PK	1320	10 $0.566 100 $0.481 250 $0.424 1000 $0.368
IRF510PBF DISTI #	International Rectifier		34
IRF510PBF DISTI #	International Rectifier	5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSF	84	1 $0.84 7 $0.63 33 $0.42
IRF510PBF DISTI #	Vishay Siliconix	5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSF	13	1 $0.84 7 $0.63
IRF510PBF DISTI #	Vishay Intertechnologies	Transistor: N-MOSFET, unipolar, 100V, 4A, 43W,	1023	3 $0.3796 10 $0.3683 50 $0.3342 250 $0.2785 1000 $0.2626
IRF510PBF DISTI #	Vishay Intertechnologies	N-Ch 100V 5,6A 43W 0,54R TO220AB RoHS: Compliant	1900	25 $0.349 100 $0.269 300 $0.229 500 $0.2205
IRF510PBF DISTI #	International Rectifier	POWER MOSFET TRANSISTOR RoHS: Compliant	0
IRF510PBF DISTI #	Vishay Siliconix	PowerField-EffectTransistor,9.2AI(D),100V,0.27ohm, RoHS: Compliant	51754	200 $1 51754 $0.9091
IRF510SPBF DISTI #	Vishay Intertechnologies	MOSFET N-Chan 100V 5.6 Amp RoHS: Compliant	4700	50 $0.646 100 $0.572 250 $0.52 500 $0.508 1000 $0.481
IRF510PBF DISTI #	Vishay Intertechnologies	MOSFET N-Chan 100V 5.6 Amp RoHS: Compliant	6450	50 $0.44 100 $0.389 250 $0.354 500 $0.346 1000 $0.327
IRF510PBF DISTI #	Vishay Intertechnologies	MOSFET, N, 100V, 5.6A, TO-220AB RoHS: Compliant	4312	5 $0.583 25 $0.555 100 $0.432 250 $0.394 500 $0.356
IRF510PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	2588	1 $3.22 10 $0.614 50 $0.477 100 $0.415 250 $0.372 500 $0.343
IRF510PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	771	10 $0.6559 100 $0.5076 500 $0.4349
IRF510PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 5.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	3365	10 $0.6559 100 $0.5076 500 $0.4349 1000 $0.3444
IRF510PBF DISTI #	Vishay Intertechnologies	MOSFET, N, 100V, 5.6A, TO-220AB RoHS: Compliant	4710	1 $1.46 10 $1.16 100 $0.877 500 $0.725 1000 $0.581 2500 $0.525 5000 $0.491 10000 $0.472
IRF510PBF.. DISTI #	Vishay Intertechnologies	RoHS: Compliant	803	1 $1.46 10 $1.16 100 $0.877 500 $0.757

IRF510P~~(1)~~
IRF510~~(14)~~
IRF51~~(20)~~
IRF5~~(66)~~
IRF~~(69)~~

Vishay Siliconix IRF510PBF

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