Infineon Technologies IRF2805STRLPBF

Name: IRF2805STRLPBF
Brand: Infineon Technologies
SKU: 2482852-IRF2805STRLPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF2805STRLPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2482852-IRF2805STRLPBF

Description:: MOSFET N-CH 55V 135A D2PAK

ECAD Model:

Datasheet:: IRF2805STRLPBF

Specifications

Infineon Technologies IRF2805STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF2805STRLPBF.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2007
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
4.7Ohm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
200W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200W
Case Connection
DRAIN
Turn On Delay Time
14 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.7m Ω @ 104A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5110pF @ 25V
Current - Continuous Drain (Id) @ 25°C
135A Tc
Gate Charge (Qg) (Max) @ Vgs
230nC @ 10V
Rise Time
120ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
110 ns
Turn-Off Delay Time
68 ns
Continuous Drain Current (ID)
135A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
75A
Drain to Source Breakdown Voltage
55V
Pulsed Drain Current-Max (IDM)
700A
Height
4.826mm
Length
10.668mm
Width
9.65mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF2805STRLPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5110pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 135A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Drain current refers to the maximum continuous current a device can conduct, and it is 75A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 68 ns.Peak drain current is 700A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRF2805STRLPBF Features
a continuous drain current (ID) of 135A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 700A.

IRF2805STRLPBF Applications
There are a lot of Infineon Technologies
IRF2805STRLPBF applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

IRF2805STRLPBF More Descriptions

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH 55V 135A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
Single N-Channel 55 V 4.7 mOhm 230 nC HEXFET® Power Mosfet - TO-262
N CHANNEL MOSFET, 55V, 135A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:135A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes
Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Power FET Operating temperature: -55... 175 °C Housing type: DPAK Polarity: N Variants: Enhancement mode Power dissipation: 200 W
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Product Comparison

The three parts on the right have similar specifications to IRF2805STRLPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Termination

Voltage - Rated DC

Current Rating

Reverse Recovery Time

Threshold Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

REACH SVHC

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IRF2805STRLPBF

Infineon Technologies

14 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2007

e3

Not For New Designs

1 (Unlimited)

2

EAR99

4.7Ohm

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

R-PSSO-G2

1

200W Tc

Single

ENHANCEMENT MODE

200W

DRAIN

14 ns

N-Channel

SWITCHING

4.7m Ω @ 104A, 10V

4V @ 250μA

5110pF @ 25V

135A Tc

230nC @ 10V

120ns

10V

±20V

110 ns

68 ns

135A

20V

75A

55V

700A

4.826mm

10.668mm

9.65mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF2907ZS-7PPBF

Infineon Technologies

-

Surface Mount

Surface Mount

TO-263-7, D2Pak (6 Leads Tab), TO-263CB

7

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2005

e3

Obsolete

1 (Unlimited)

6

EAR99

4.5MOhm

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

R-PSSO-G6

1

300W Tc

Single

ENHANCEMENT MODE

300W

DRAIN

21 ns

N-Channel

SWITCHING

3.8m Ω @ 110A, 10V

4V @ 250μA

7580pF @ 25V

160A Tc

260nC @ 10V

90ns

10V

±20V

44 ns

92 ns

160A

20V

-

75V

-

4.5466mm

10.3378mm

10.05mm

No

RoHS Compliant

Lead Free

SMD/SMT

75V

160A

35 ns

4V

75V

53 ns

4 V

No SVHC

-

-

-

-

-

-

-

IRF2805STRLPBF vs IRF2907ZS-7PPBF
IRF2907ZLPBF

Infineon Technologies

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

-

-55°C~175°C TJ

Tube

HEXFET®

2003

-

Obsolete

1 (Unlimited)

-

EAR99

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

300W Tc

Single

-

300W

-

19 ns

N-Channel

-

4.5m Ω @ 75A, 10V

4V @ 250μA

7500pF @ 25V

160A Tc

270nC @ 10V

140ns

10V

±20V

100 ns

97 ns

170A

20V

-

75V

-

9.652mm

10.668mm

4.826mm

No

RoHS Compliant

-

Through Hole

-

-

-

4V

75V

-

4 V

No SVHC

-

-

-

-

-

-

-

IRF2805STRLPBF vs IRF2907ZLPBF
IRF2804STRR7PP

Infineon Technologies

-

Surface Mount

Surface Mount

TO-263-7, D2Pak (6 Leads Tab), TO-263CB

3

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2005

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

330W Tc

Single

-

330W

-

13 ns

N-Channel

-

1.6mOhm @ 160A, 10V

4V @ 250μA

6930pF @ 25V

160A Tc

260nC @ 10V

120ns

10V

±20V

130 ns

130 ns

160A

20V

-

40V

-

-

-

-

No

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

D2PAK (7-Lead)

175°C

-55°C

40V

6.93nF

2mOhm

1.6 mΩ

IRF2805STRLPBF vs IRF2804STRR7PP