Infineon Technologies IRF2804SPBF

Name: IRF2804SPBF
Brand: Infineon Technologies
SKU: 2848917-IRF2804SPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF2804SPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2848917-IRF2804SPBF

Description:: MOSFET N-CH 40V 75A D2PAK

ECAD Model:

Datasheet:: IRF2804SPBF

Specifications

Infineon Technologies IRF2804SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF2804SPBF.

Factory Lead Time
16 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2003
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
300W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6450pF @ 25V
Current - Continuous Drain (Id) @ 25°C
75A Tc
Gate Charge (Qg) (Max) @ Vgs
240nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant

Description

IRF2804SPBF Description
The newest processing techniques are used in this HEXFET? Power MOSFET to provide exceptionally low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device that may be used in a wide range of other applications.

IRF2804SPBF Features
Advanced Process Technology
Ultra-Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free

IRF2804SPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

IRF2804SPBF More Descriptions

Single N-Channel 40 V 2 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 1.5Milliohms;ID 75A;D2Pak;PD 330W;VGS /-20
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
IRF2804SPBF,MOSFET, 40V, 280A, 2.3 MOHM, 160 NC QG, D2-PAKMOSFET, N, 40V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300mW; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:2804; Current Id Max:270A; Package / Case:D2-PAK; Power Dissipation Pd:300mW; Pulse Current Idm:1080A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175oC junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Product Comparison

The three parts on the right have similar specifications to IRF2804SPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Mount

Number of Pins

Termination

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IRF2804SPBF

Infineon Technologies

16 Weeks

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tube

HEXFET®

2003

Discontinued

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

300W Tc

N-Channel

2m Ω @ 75A, 10V

4V @ 250μA

6450pF @ 25V

75A Tc

240nC @ 10V

40V

10V

±20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF2907ZLPBF

Infineon Technologies

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-55°C~175°C TJ

Tube

HEXFET®

2003

Obsolete

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

300W Tc

N-Channel

4.5m Ω @ 75A, 10V

4V @ 250μA

7500pF @ 25V

160A Tc

270nC @ 10V

-

10V

±20V

RoHS Compliant

Through Hole

3

Through Hole

Single

300W

19 ns

140ns

100 ns

97 ns

170A

4V

20V

75V

75V

4 V

9.652mm

10.668mm

4.826mm

No SVHC

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF2804SPBF vs IRF2907ZLPBF
IRF2807STRRPBF

Infineon Technologies

39 Weeks

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2002

Not For New Designs

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

230W Tc

N-Channel

13m Ω @ 43A, 10V

4V @ 250μA

3820pF @ 25V

82A Tc

160nC @ 10V

75V

10V

±20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

YES

SILICON

e3

2

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

FET General Purpose Power

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

75A

0.013Ohm

280A

75V

340 mJ

-

-

-

-

-

-

IRF2804SPBF vs IRF2807STRRPBF
IRF2804STRR7PP

Infineon Technologies

-

Surface Mount

TO-263-7, D2Pak (6 Leads Tab), TO-263CB

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2005

Obsolete

1 (Unlimited)

-

MOSFET (Metal Oxide)

330W Tc

N-Channel

1.6mOhm @ 160A, 10V

4V @ 250μA

6930pF @ 25V

160A Tc

260nC @ 10V

40V

10V

±20V

RoHS Compliant

Surface Mount

3

-

Single

330W

13 ns

120ns

130 ns

130 ns

160A

-

20V

40V

-

-

-

-

-

-

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

D2PAK (7-Lead)

175°C

-55°C

6.93nF

2mOhm

1.6 mΩ

IRF2804SPBF vs IRF2804STRR7PP