Infineon Technologies IPW65R190CFD
- Part Number:
- IPW65R190CFD
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2480010-IPW65R190CFD
- Description:
- MOSFET N-CH 650V 17.5A TO247
- Datasheet:
- IPW65R190CFD
Infineon Technologies IPW65R190CFD technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPW65R190CFD.
- Package / CaseTO-247
- PackagingTube-packed
- FET TypeN Channel
- Rds On (Max) @ Id, Vgs190mΩ @ 7.3A,10V
- Vgs(th) (Max) @ Id4.5V @ 730uA
- Drain to Source Voltage (Vdss)650V
- Continuous Drain Current (Id) @ 25°C17.5A Tc
- Power Dissipation-Max (Ta=25°C)151W Tc
- RoHS StatusRoHS Compliant
IPW65R190CFD Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPW65R190CFD or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPW65R190CFD. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPW65R190CFD or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPW65R190CFD. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IPW65R190CFD More Descriptions
MOSFET Transistor, N Channel, 17.5 A, 700 V, 0.445 ohm, 10 V, 4 V
Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3 Tab) TO-247 Tube
MOSFET N-Ch 650V 17.5A TO247-3 CoolMOS CFD2
650V CoolMOS C6 CFD POWER Transistor
Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3 Tab) TO-247 Tube
MOSFET N-Ch 650V 17.5A TO247-3 CoolMOS CFD2
650V CoolMOS C6 CFD POWER Transistor
The three parts on the right have similar specifications to IPW65R190CFD.
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ImagePart NumberManufacturerPackage / CasePackagingFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Continuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)RoHS StatusFactory Lead TimeMountMounting TypeTransistor Element MaterialOperating TemperatureSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyTerminal PositionPin CountJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeTransistor ApplicationInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Radiation HardeningLead FreeSupplier Device PackageView Compare
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IPW65R190CFDTO-247Tube-packedN Channel190mΩ @ 7.3A,10V4.5V @ 730uA650V17.5A Tc151W TcRoHS Compliant----------------------------------------
-
TO-247-3TubeN-Channel48m Ω @ 29.4A, 10V4.5V @ 2.9mA---ROHS3 Compliant18 WeeksThrough HoleThrough HoleSILICON-40°C~150°C TJAutomotive, AEC-Q101, CoolMOS™2008yesActive1 (Unlimited)3HIGH RELIABILITYMOSFET (Metal Oxide)SINGLE3R-PSFM-T31SINGLE WITH BUILT-IN DIODE500W TcENHANCEMENT MODE500W22 nsSWITCHING7440pF @ 100V63.3A Tc270nC @ 10V10ns10V±20V4 ns85 ns63.3A20V650V0.048Ohm228ANoLead Free-
-
TO-247-3TubeN-Channel250mOhm @ 7.8A, 10V3.5V @ 440μA650V--ROHS3 Compliant--Through Hole--55°C~150°C TJCoolMOS™--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-----104W Tc----1.2pF @ 100V12A Tc35nC @ 10V-10V±20V---------PG-TO247-3
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TO-247-3TubeN-Channel190mOhm @ 7.3A, 10V3.5V @ 730μA650V--ROHS3 Compliant--Through Hole--55°C~150°C TJCoolMOS™--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-----151W Tc----1.62pF @ 100V20.2A Tc73nC @ 10V-10V±20V---------PG-TO247-3
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