IPW65R190CFD

Infineon Technologies IPW65R190CFD

Part Number:
IPW65R190CFD
Manufacturer:
Infineon Technologies
Ventron No:
2480010-IPW65R190CFD
Description:
MOSFET N-CH 650V 17.5A TO247
ECAD Model:
Datasheet:
IPW65R190CFD

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Specifications
Infineon Technologies IPW65R190CFD technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPW65R190CFD.
  • Package / Case
    TO-247
  • Packaging
    Tube-packed
  • FET Type
    N Channel
  • Rds On (Max) @ Id, Vgs
    190mΩ @ 7.3A,10V
  • Vgs(th) (Max) @ Id
    4.5V @ 730uA
  • Drain to Source Voltage (Vdss)
    650V
  • Continuous Drain Current (Id) @ 25°C
    17.5A Tc
  • Power Dissipation-Max (Ta=25°C)
    151W Tc
  • RoHS Status
    RoHS Compliant
Description
IPW65R190CFD Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPW65R190CFD or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPW65R190CFD. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IPW65R190CFD More Descriptions
MOSFET Transistor, N Channel, 17.5 A, 700 V, 0.445 ohm, 10 V, 4 V
Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3 Tab) TO-247 Tube
MOSFET N-Ch 650V 17.5A TO247-3 CoolMOS CFD2
650V CoolMOS C6 CFD POWER Transistor
Product Comparison
The three parts on the right have similar specifications to IPW65R190CFD.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Packaging
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (Id) @ 25°C
    Power Dissipation-Max (Ta=25°C)
    RoHS Status
    Factory Lead Time
    Mount
    Mounting Type
    Transistor Element Material
    Operating Temperature
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Additional Feature
    Technology
    Terminal Position
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Radiation Hardening
    Lead Free
    Supplier Device Package
    View Compare
  • IPW65R190CFD
    IPW65R190CFD
    TO-247
    Tube-packed
    N Channel
    190mΩ @ 7.3A,10V
    4.5V @ 730uA
    650V
    17.5A Tc
    151W Tc
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPW65R048CFDAFKSA1
    TO-247-3
    Tube
    N-Channel
    48m Ω @ 29.4A, 10V
    4.5V @ 2.9mA
    -
    -
    -
    ROHS3 Compliant
    18 Weeks
    Through Hole
    Through Hole
    SILICON
    -40°C~150°C TJ
    Automotive, AEC-Q101, CoolMOS™
    2008
    yes
    Active
    1 (Unlimited)
    3
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    SINGLE
    3
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    500W Tc
    ENHANCEMENT MODE
    500W
    22 ns
    SWITCHING
    7440pF @ 100V
    63.3A Tc
    270nC @ 10V
    10ns
    10V
    ±20V
    4 ns
    85 ns
    63.3A
    20V
    650V
    0.048Ohm
    228A
    No
    Lead Free
    -
  • IPW60R250CP
    TO-247-3
    Tube
    N-Channel
    250mOhm @ 7.8A, 10V
    3.5V @ 440μA
    650V
    -
    -
    ROHS3 Compliant
    -
    -
    Through Hole
    -
    -55°C~150°C TJ
    CoolMOS™
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    104W Tc
    -
    -
    -
    -
    1.2pF @ 100V
    12A Tc
    35nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PG-TO247-3
  • IPW65R190E6FKSA1
    TO-247-3
    Tube
    N-Channel
    190mOhm @ 7.3A, 10V
    3.5V @ 730μA
    650V
    -
    -
    ROHS3 Compliant
    -
    -
    Through Hole
    -
    -55°C~150°C TJ
    CoolMOS™
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    151W Tc
    -
    -
    -
    -
    1.62pF @ 100V
    20.2A Tc
    73nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PG-TO247-3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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