Infineon Technologies IPW65R150CFDFKSA1

Name: IPW65R150CFDFKSA1
Brand: Infineon Technologies
SKU: 2489270-IPW65R150CFDFKSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPW65R150CFDFKSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2489270-IPW65R150CFDFKSA1

Description:: MOSFET N-CH 650V TO247

ECAD Model:

Datasheet:: IPW65R150CFDFKSA1

Specifications

Infineon Technologies IPW65R150CFDFKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPW65R150CFDFKSA1.

Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
CoolMOS™
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Power Dissipation-Max
195.3W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
195.3W
Turn On Delay Time
12.4 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
150m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 900μA
Input Capacitance (Ciss) (Max) @ Vds
2340pF @ 100V
Current - Continuous Drain (Id) @ 25°C
22.4A Tc
Gate Charge (Qg) (Max) @ Vgs
86nC @ 10V
Rise Time
7.6ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
5.6 ns
Turn-Off Delay Time
52.8 ns
Continuous Drain Current (ID)
22.4A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
650V
Drain to Source Breakdown Voltage
700V
Pulsed Drain Current-Max (IDM)
72A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IPW65R150CFDFKSA1 Description
CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS TM CFD2 series combines the experience of the leading SJ MOSFET supplier with high-class innovation. The IPW65R150CFDFKSA1 provides all benefits of a fast-switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation, and conduction losses together with the highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler.

IPW65R150CFDFKSA1 Features
Ultra-fast body diode Very high commutation ruggedness Extremely low losses due to very low FOM Rdson*Qg and Ross Easy to use/drive Qualified for industrial-grade applications according to JEDEC(J-STD20 and JESD22) Pb-free plating, Halogen free for mold compound

IPW65R150CFDFKSA1 Applications
PC Silverbox LCD TV Lighting Server Telecom Solar

IPW65R150CFDFKSA1 More Descriptions

Single N-Channel 650 V 150 mOhm 86 nC CoolMOS Power Mosfet - TO-247-3
Mosfet, N-Ch, 650V, 22.4A, To-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon IPW65R150CFDFKSA1
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

Product Comparison

The three parts on the right have similar specifications to IPW65R150CFDFKSA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

Number of Pins

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IPW65R150CFDFKSA1

Infineon Technologies

18 Weeks

Through Hole

Through Hole

TO-247-3

SILICON

-55°C~150°C TJ

Tube

CoolMOS™

2011

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

1

195.3W Tc

Single

ENHANCEMENT MODE

195.3W

12.4 ns

N-Channel

SWITCHING

150m Ω @ 9.3A, 10V

4.5V @ 900μA

2340pF @ 100V

22.4A Tc

86nC @ 10V

7.6ns

10V

±20V

5.6 ns

52.8 ns

22.4A

20V

650V

700V

72A

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
IPW60R070C6

Infineon Technologies

-

-

-

TO-247

-

-

Tube-packed

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N Channel

-

70mΩ @ 25.8A,10V

3.5V @ 1.72mA

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

600V

53A Tc

391W Tc

-

-

-

-

-

-

-

IPW65R150CFDFKSA1 vs IPW60R070C6
IPW60R160P6FKSA1

Infineon Technologies

18 Weeks

Through Hole

Through Hole

TO-247-3

-

-55°C~150°C TJ

Tube

CoolMOS™ P6

2008

-

-

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

176W Tc

-

-

-

12.5 ns

N-Channel

-

160mOhm @ 9A, 10V

4.5V @ 750μA

2080pF @ 100V

23.8A Tc

44nC @ 10V

7.6ns

10V

±20V

5.8 ns

40 ns

23.8A

20V

600V

-

-

ROHS3 Compliant

Lead Free

600V

-

-

3

PG-TO247-3

150°C

-55°C

2.08nF

144mOhm

160 mΩ

IPW65R150CFDFKSA1 vs IPW60R160P6FKSA1
IPW60R075CP

Infineon Technologies

-

-

-

PG-TO247-3

-

-

Tube-packed

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

IPW65R150CFDFKSA1 vs IPW60R075CP

Certification

Related parts for IPW65R150CFDFKSA1

IPW60R099P6XKSA1

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IPW65R048CFDAFKSA1

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IPW60R180P7XKSA1

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MOSFET N-CH 650V 18A TO247-3
IPW60R280E6

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MOSFET N-CH 600V 13.8A TO247
IPW60R070C6

Infineon Technologies

MOSFET N-CH 600V 53A TO247
IPW65R190E6FKSA1

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MOSFET N-CH 650V 20.2A TO247
IPW65R310CFDFKSA1

Infineon Technologies

MOSFET N-CH 650V 11.4A TO247
IPW60R160P6FKSA1

Infineon Technologies

MOSFET N-CH 600V TO247-3
IPW60R075CP

Infineon Technologies

MOSFET N-CH 650V 39A TO-247

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IPW65R1~~(13)~~
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IPW6~~(69)~~
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Part Number	Manufacturers	Description	Stock	Price
IPW65R150CFDFKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 650V 22.4A 3-Pin(3 Tab) TO-247 T RoHS: Compliant	240	1 $3.608 10 $3.1509 100 $2.662
IPW65R150CFDFKSA1 DISTI #	Infineon Technologies AG	MOSFET N-CH 650V TO247 RoHS: Compliant	1200	1 $4.93 10 $4.428 240 $3.68242 720 $3.03629 1200 $2.60555
IPW65R150CFDFKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 650V 22.4A 3-Pin(3 Tab) TO-247 T RoHS: Compliant	240	4 $3.608 10 $3.1509 100 $2.662
IPW65R150CFDFKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 650V 22.4A 3-Pin(3 Tab) TO-247 T RoHS: Compliant	240	30 $1.8882
IPW65R150CFDFKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 700V 22.4A 3-Pin TO-247 Tube (Al RoHS: Compliant	480	1 $2.19 10 $1.99 25 $1.99 50 $1.89 100 $1.79 500 $1.69 1000 $1.59
IPW65R150CFDFKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 700V 22.4A 3-Pin TO-247 Tube - R RoHS: Compliant	0	240 $2.09 480 $1.99 960 $1.99 1440 $1.89 2400 $1.89
IPW65R150CFDFKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 700V 22.4A 3-Pin TO-247 Tube (Al RoHS: Compliant	0
IPW65R150CFDFKSA1 DISTI #	Infineon Technologies AG	MOSFET, N-CH, 650V, 22.4A, TO-247-3, Transistor P	0	1 $4.83 10 $4.16 25 $3.99 50 $3.83 100 $3.66
IPW65R150CFD DISTI #	Infineon Technologies AG	MOSFET N-Ch 700V 22.4A TO247-3 RoHS: Compliant	1129	1 $3.99 10 $3.39 100 $2.94
IPW65R150CFDFKSA1 DISTI #	Infineon Technologies AG	MOSFET N-Ch 700V 22.4A TO247-3 RoHS: Compliant	441	1 $3.99 10 $3.39 100 $2.94
IPW65R150CFDFKSA1 DISTI #	Infineon Technologies AG	MOSFET, N-CH, 650V, 22.4A, TO-247-3 RoHS: Compliant	0	1 $4.55 10 $4.26 100 $3.77
IPW65R150CFDFKSA1 DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 650V 22.4A 3-Pin(3 Tab) TO-247 T RoHS: Compliant	240	240 $3.22
IPW65R150CFDFKSA1 DISTI #	Infineon Technologies AG	MOSFET, N-CH, 650V, 22.4A, TO-247-3 RoHS: Compliant	240	1 $3.41 10 $2.59 100 $2.25 250 $2.18 500 $2.1

Infineon Technologies IPW65R150CFDFKSA1

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