Infineon Technologies IPW65R150CFDAFKSA1
- Part Number:
- IPW65R150CFDAFKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2488635-IPW65R150CFDAFKSA1
- Description:
- MOSFET N-CH 650V TO247
- Datasheet:
- IPW65R150CFDAFKSA1
Infineon Technologies IPW65R150CFDAFKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPW65R150CFDAFKSA1.
- Factory Lead Time18 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- SeriesAutomotive, AEC-Q101, CoolMOS™
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Number of Elements1
- Power Dissipation-Max195.3W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time12.4 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs150m Ω @ 9.3A, 10V
- Vgs(th) (Max) @ Id4.5V @ 900μA
- Input Capacitance (Ciss) (Max) @ Vds2340pF @ 100V
- Current - Continuous Drain (Id) @ 25°C22.4A Tc
- Gate Charge (Qg) (Max) @ Vgs86nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Turn-Off Delay Time52.8 ns
- Continuous Drain Current (ID)22.4A
- Gate to Source Voltage (Vgs)30V
- Max Dual Supply Voltage650V
- Drain-source On Resistance-Max0.15Ohm
- Pulsed Drain Current-Max (IDM)72A
- Avalanche Energy Rating (Eas)614 mJ
- Height21.1mm
- Length16.03mm
- Width5.16mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IPW65R150CFDAFKSA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 614 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2340pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22.4A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 52.8 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 72A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12.4 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Powered by 650V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPW65R150CFDAFKSA1 Features
the avalanche energy rating (Eas) is 614 mJ
a continuous drain current (ID) of 22.4A
the turn-off delay time is 52.8 ns
based on its rated peak drain current 72A.
IPW65R150CFDAFKSA1 Applications
There are a lot of Infineon Technologies
IPW65R150CFDAFKSA1 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 614 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2340pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22.4A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 52.8 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 72A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12.4 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Powered by 650V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPW65R150CFDAFKSA1 Features
the avalanche energy rating (Eas) is 614 mJ
a continuous drain current (ID) of 22.4A
the turn-off delay time is 52.8 ns
based on its rated peak drain current 72A.
IPW65R150CFDAFKSA1 Applications
There are a lot of Infineon Technologies
IPW65R150CFDAFKSA1 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IPW65R150CFDAFKSA1 More Descriptions
Single N-Channel 650 V 150 mOhm 86 nC CoolMOS Power Mosfet - TO247-3
Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(3 Tab) TO-247 Tube
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO247-3, RoHSInfineon SCT
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(3 Tab) TO-247 Tube
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO247-3, RoHSInfineon SCT
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
The three parts on the right have similar specifications to IPW65R150CFDAFKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthRoHS StatusLead FreeDrain to Source Voltage (Vdss)Continuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)Supplier Device PackageView Compare
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IPW65R150CFDAFKSA118 WeeksThrough HoleThrough HoleTO-247-33SILICON-40°C~150°C TJTubeAutomotive, AEC-Q101, CoolMOS™2008e3yesActive1 (Unlimited)3Tin (Sn)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED31195.3W TcSingleENHANCEMENT MODE12.4 nsN-ChannelSWITCHING150m Ω @ 9.3A, 10V4.5V @ 900μA2340pF @ 100V22.4A Tc86nC @ 10V10V±20V52.8 ns22.4A30V650V0.15Ohm72A614 mJ21.1mm16.03mm5.16mmROHS3 CompliantLead Free-----
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---TO-247---Tube-packed-------------------N Channel-70mΩ @ 25.8A,10V3.5V @ 1.72mA---------------RoHS Compliant-600V53A Tc391W Tc-
-
--Through HoleTO-247-3---55°C~150°C TJTubeCoolMOS™---Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----151W Tc---N-Channel-190mOhm @ 7.3A, 10V3.5V @ 730μA1.62pF @ 100V20.2A Tc73nC @ 10V10V±20V----------ROHS3 Compliant-650V--PG-TO247-3
-
---PG-TO247-3---Tube-packed--------------------------------------RoHS Compliant-----
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