Infineon Technologies IPW65R070C6

Name: IPW65R070C6
Brand: Infineon Technologies
SKU: 3070267-IPW65R070C6
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPW65R070C6

Manufacturer:: Infineon Technologies

Ventron No:: 3070267-IPW65R070C6

Description:: MOSFET N-CH 650V 53.5A TO247

ECAD Model:

Datasheet:: IPW65R070C6

Specifications

Infineon Technologies IPW65R070C6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPW65R070C6.

Package / Case
PG-TO247-3
Packaging
Tube-packed
FET Type
N Channel
Rds On (Max) @ Id, Vgs
70mΩ @ 17.6A,10V
Vgs(th) (Max) @ Id
3.5V @ 1.76mA
Drain to Source Voltage (Vdss)
650V
Continuous Drain Current (Id) @ 25°C
53.5A Tc
Power Dissipation-Max (Ta=25°C)
391W Tc
RoHS Status
RoHS Compliant

Description

IPW65R070C6 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPW65R070C6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPW65R070C6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to IPW65R070C6.

Image

Part Number

Manufacturer

Package / Case

Packaging

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

RoHS Status

Factory Lead Time

Mount

Mounting Type

Transistor Element Material

Operating Temperature

Series

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Additional Feature

Technology

Terminal Position

Pin Count

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Turn On Delay Time

Transistor Application

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Radiation Hardening

Lead Free

Supplier Device Package

View Compare
IPW65R070C6

Infineon Technologies

PG-TO247-3

Tube-packed

N Channel

70mΩ @ 17.6A,10V

3.5V @ 1.76mA

650V

53.5A Tc

391W Tc

RoHS Compliant

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-
IPW65R048CFDAFKSA1

Infineon Technologies

TO-247-3

Tube

N-Channel

48m Ω @ 29.4A, 10V

4.5V @ 2.9mA

-

-

-

ROHS3 Compliant

18 Weeks

Through Hole

Through Hole

SILICON

-40°C~150°C TJ

Automotive, AEC-Q101, CoolMOS™

2008

yes

Active

1 (Unlimited)

3

HIGH RELIABILITY

MOSFET (Metal Oxide)

SINGLE

3

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

500W Tc

ENHANCEMENT MODE

500W

22 ns

SWITCHING

7440pF @ 100V

63.3A Tc

270nC @ 10V

10ns

10V

±20V

4 ns

85 ns

63.3A

20V

650V

0.048Ohm

228A

No

Lead Free

-

IPW65R070C6 vs IPW65R048CFDAFKSA1
IPW60R070C6

Infineon Technologies

TO-247

Tube-packed

N Channel

70mΩ @ 25.8A,10V

3.5V @ 1.72mA

600V

53A Tc

391W Tc

RoHS Compliant

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IPW65R070C6 vs IPW60R070C6
IPW65R190E6FKSA1

Infineon Technologies

TO-247-3

Tube

N-Channel

190mOhm @ 7.3A, 10V

3.5V @ 730μA

650V

-

-

ROHS3 Compliant

-

-

Through Hole

-

-55°C~150°C TJ

CoolMOS™

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

151W Tc

-

-

-

-

1.62pF @ 100V

20.2A Tc

73nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

PG-TO247-3

IPW65R070C6 vs IPW65R190E6FKSA1