Infineon Technologies IPW60R280P6FKSA1

Name: IPW60R280P6FKSA1
Brand: Infineon Technologies
SKU: 2484380-IPW60R280P6FKSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPW60R280P6FKSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2484380-IPW60R280P6FKSA1

Description:: MOSFET N-CH 600V TO247-3

ECAD Model:

Datasheet:: IPW60R280P6FKSA1

Specifications

Infineon Technologies IPW60R280P6FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPW60R280P6FKSA1.

Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Supplier Device Package
PG-TO247-3
Weight
38.000013g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
CoolMOS™ P6
Published
2008
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
104W Tc
Power Dissipation
104W
Turn On Delay Time
12 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
280mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 430μA
Input Capacitance (Ciss) (Max) @ Vds
1190pF @ 100V
Current - Continuous Drain (Id) @ 25°C
13.8A Tc
Gate Charge (Qg) (Max) @ Vgs
25.5nC @ 10V
Rise Time
6ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Turn-Off Delay Time
36 ns
Continuous Drain Current (ID)
13.8A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
600V
Input Capacitance
1.19nF
Drain to Source Resistance
252mOhm
Rds On Max
280 mΩ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IPW60R280P6FKSA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1190pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13.8A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 36 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 252mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 600V, it supports the maximal dual supply voltage.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IPW60R280P6FKSA1 Features
a continuous drain current (ID) of 13.8A
the turn-off delay time is 36 ns
single MOSFETs transistor is 252mOhm
a 600V drain to source voltage (Vdss)

IPW60R280P6FKSA1 Applications
There are a lot of Infineon Technologies
IPW60R280P6FKSA1 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

IPW60R280P6FKSA1 More Descriptions

MOSFET Transistor, N Channel, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
Single N-Channel 600 V 280 mOhm 25.5 nC CoolMOS Power Mosfet - TO-247-3
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHSInfineon SCT
MOSFET, N-CH, 600V, 13.8A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.252ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Product Comparison

The three parts on the right have similar specifications to IPW60R280P6FKSA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Number of Channels

Power Dissipation-Max

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

Pbfree Code

Number of Terminations

ECCN Code

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Configuration

Operating Mode

Transistor Application

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

View Compare
IPW60R280P6FKSA1

Infineon Technologies

18 Weeks

Through Hole

Through Hole

TO-247-3

3

PG-TO247-3

38.000013g

-55°C~150°C TJ

Tube

CoolMOS™ P6

2008

Active

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

1

1

104W Tc

104W

12 ns

N-Channel

280mOhm @ 5.2A, 10V

4.5V @ 430μA

1190pF @ 100V

13.8A Tc

25.5nC @ 10V

6ns

600V

10V

±20V

36 ns

13.8A

20V

600V

1.19nF

252mOhm

280 mΩ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPW60R180P7XKSA1

Infineon Technologies

18 Weeks

-

Through Hole

TO-247-3

-

-

-

-55°C~150°C TJ

Tube

CoolMOS™ P7

2017

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

1

-

72W Tc

-

-

N-Channel

180m Ω @ 5.6A, 10V

4V @ 280μA

1081pF @ 400V

18A Tc

25nC @ 10V

-

650V

10V

±20V

-

-

-

-

-

-

-

ROHS3 Compliant

-

NO

SILICON

yes

3

EAR99

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

0.18Ohm

53A

600V

56 mJ

-

-

IPW60R280P6FKSA1 vs IPW60R180P7XKSA1
IPW60R070C6

Infineon Technologies

-

-

-

TO-247

-

-

-

-

Tube-packed

-

-

-

-

-

-

-

-

-

-

-

-

N Channel

70mΩ @ 25.8A,10V

3.5V @ 1.72mA

-

-

-

-

600V

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

53A Tc

391W Tc

IPW60R280P6FKSA1 vs IPW60R070C6
IPW65R310CFDFKSA1

Infineon Technologies

-

-

Through Hole

TO-247-3

-

PG-TO247-3

-

-55°C~150°C TJ

Tube

CoolMOS™

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

104.2W Tc

-

-

N-Channel

310mOhm @ 4.4A, 10V

4.5V @ 440μA

1.1pF @ 100V

11.4A Tc

41nC @ 10V

-

650V

10V

±20V

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPW60R280P6FKSA1 vs IPW65R310CFDFKSA1

Certification

Related parts for IPW60R280P6FKSA1

IPW60R099P6XKSA1

Infineon Technologies

MOSFET N-CH 600V TO247-3
IPW65R048CFDAFKSA1

Infineon Technologies

MOSFET N-CH 650V TO-247-3
IPW60R250CP

Infineon Technologies

MOSFET N-CH 650V 12A TO-247
IPW60R180P7XKSA1

Infineon Technologies

MOSFET N-CH 650V 18A TO247-3
IPW60R280E6

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MOSFET N-CH 600V 13.8A TO247
IPW60R070C6

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MOSFET N-CH 600V 53A TO247
IPW65R190E6FKSA1

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MOSFET N-CH 650V 20.2A TO247
IPW65R310CFDFKSA1

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MOSFET N-CH 600V TO247-3
IPW60R075CP

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Part Number	Manufacturers	Description	Stock	Price
IPW60R280P6FKSA1 DISTI #32883499	Infineon Technologies AG	Trans MOSFET N-CH 600V 13.8A 3-Pin(3 Tab) TO-247 T	112320	240 $1.4612
IPW60R280P6FKSA1 DISTI #33138257	Infineon Technologies AG	Trans MOSFET N-CH 600V 13.8A 3-Pin(3 Tab) TO-247 T	477	9 $1.1367
IPW60R280P6FKSA1 DISTI #IPW60R280P6FKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V TO247-3 RoHS: Compliant	0	240 $2.02983
IPW60R280P6FKSA1 DISTI #V99:2348_06382910	Infineon Technologies AG	Trans MOSFET N-CH 600V 13.8A 3-Pin(3 Tab) TO-247 T	0	240 $1.68 2400 $1.629 24000 $1.321 120000 $1.139 240000 $1.137
IPW60R280P6FKSA1 DISTI #IPW60R280P6FKSA1	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 13.8A 3-Pin TO-247 Tub	0	302 $1.1949 604 $1.1519 906 $1.1109 1510 $1.0729 3020 $1.0539
IPW60R280P6FKSA1 DISTI #IPW60R280P6FKSA1	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 13.8A 3-Pin TO-247 Tub RoHS: Compliant	0	480 $1.29 960 $1.19 1440 $1.19 2400 $1.09 4800 $1.09
IPW60R280P6FKSA1 DISTI #SP001017086	Infineon Technologies AG	Trans MOSFET N-CH 600(Min)V 13.8A 3-Pin TO-247 Tub RoHS: Compliant	0	30 $1.5109 60 $1.2589 120 $1.1619 180 $1.0789 300 $1.0069
IPW60R280P6 DISTI #726-IPW60R280P6	Infineon Technologies AG	MOSFET N-Ch 600V 13.8A TO247-3 RoHS: Compliant	0	1 $2.67 10 $2.26 100 $1.81 500 $1.58 1000 $1.31
IPW60R280P6FKSA1 DISTI #726-IPW60R280P6FKSA1	Infineon Technologies AG	MOSFET N-Ch 600V 13.8A TO247-3 RoHS: Compliant	0	1 $2.67 10 $2.26 100 $1.81 500 $1.58 1000 $1.31 2500 $1.22 5000 $1.18
IPW60R280P6FKSA1 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor RoHS: Compliant	238	1 $1.34 25 $1.25 100 $1.2 500 $1.15 1000 $1.09
IPW60R280P6FKSA1 DISTI #IPW60R280P6FKSA1	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 600V, 13.8A, 1	224	1 $2.5 3 $2.15 10 $1.73 25 $1.5
IPW60R280P6FKSA1 DISTI #2420504	Infineon Technologies AG	MOSFET, N-CH, 600V, 13.8A, TO-247-3 RoHS: Compliant	0	1 $4.02 10 $3.41 100 $2.73 500 $2.38
IPW60R280P6FKSA1 DISTI #2420504	Infineon Technologies AG	MOSFET, N-CH, 600V, 13.8A, TO-247-3	3	1 $1.86 10 $1.39 100 $1.12 250 $1.1 500 $1.08

Infineon Technologies IPW60R280P6FKSA1

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