IPW60R280C6

Infineon Technologies IPW60R280C6

Part Number:
IPW60R280C6
Manufacturer:
Infineon Technologies
Ventron No:
2481067-IPW60R280C6
Description:
MOSFET N-CH 600V 13.8A TO247
ECAD Model:
Datasheet:
IPW60R280C6

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Specifications
Infineon Technologies IPW60R280C6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPW60R280C6.
  • Vgs(th) (Max) @ Id:
    3.5V @ 430µA
  • Vgs (Max):
    ±20V
  • Technology:
    MOSFET (Metal Oxide)
  • Supplier Device Package:
    PG-TO247-3
  • Series:
    CoolMOS™
  • Rds On (Max) @ Id, Vgs:
    280 mOhm @ 6.5A, 10V
  • Power Dissipation (Max):
    104W (Tc)
  • Packaging:
    Tube
  • Package / Case:
    TO-247-3
  • Operating Temperature:
    -55°C ~ 150°C (TJ)
  • Mounting Type:
    Through Hole
  • Input Capacitance (Ciss) (Max) @ Vds:
    950pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs:
    43nC @ 10V
  • FET Type:
    N-Channel
  • FET Feature:
    -
  • Drive Voltage (Max Rds On, Min Rds On):
    10V
  • Drain to Source Voltage (Vdss):
    600V
  • Current - Continuous Drain (Id) @ 25°C:
    13.8A (Tc)
Description
We can supply International Rectifier (Infineon Technologies) IPW60R280C6, use the request quote form to request IPW60R280C6 pirce,  International Rectifier (Infineon Technologies) Datasheet PDF and lead time.ventronchip.com is a professional electronic components distributor. With 3 Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPW60R280C6.The price and lead time for IPW60R280C6 depending on the quantity required, availability and warehouse location.
Product Comparison
The three parts on the right have similar specifications to IPW60R280C6.
  • Image
    Part Number
    Manufacturer
    Vgs(th) (Max) @ Id:
    Vgs (Max):
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drive Voltage (Max Rds On, Min Rds On):
    Drain to Source Voltage (Vdss):
    Current - Continuous Drain (Id) @ 25°C:
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Additional Feature
    Technology
    Terminal Position
    Pin Count
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (Id) @ 25°C
    Power Dissipation-Max (Ta=25°C)
    View Compare
  • IPW60R280C6
    IPW60R280C6
    3.5V @ 430µA
    ±20V
    MOSFET (Metal Oxide)
    PG-TO247-3
    CoolMOS™
    280 mOhm @ 6.5A, 10V
    104W (Tc)
    Tube
    TO-247-3
    -55°C ~ 150°C (TJ)
    Through Hole
    950pF @ 100V
    43nC @ 10V
    N-Channel
    -
    10V
    600V
    13.8A (Tc)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPW65R048CFDAFKSA1
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    18 Weeks
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -40°C~150°C TJ
    Tube
    Automotive, AEC-Q101, CoolMOS™
    2008
    yes
    Active
    1 (Unlimited)
    3
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    SINGLE
    3
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    500W Tc
    ENHANCEMENT MODE
    500W
    22 ns
    N-Channel
    SWITCHING
    48m Ω @ 29.4A, 10V
    4.5V @ 2.9mA
    7440pF @ 100V
    63.3A Tc
    270nC @ 10V
    10ns
    10V
    ±20V
    4 ns
    85 ns
    63.3A
    20V
    650V
    0.048Ohm
    228A
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
  • IPW60R070C6
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-247
    -
    -
    Tube-packed
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N Channel
    -
    70mΩ @ 25.8A,10V
    3.5V @ 1.72mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    600V
    53A Tc
    391W Tc
  • IPW60R075CP
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PG-TO247-3
    -
    -
    Tube-packed
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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