Infineon Technologies IPW60R280C6
- Part Number:
- IPW60R280C6
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2481067-IPW60R280C6
- Description:
- MOSFET N-CH 600V 13.8A TO247
- Datasheet:
- IPW60R280C6
Infineon Technologies IPW60R280C6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPW60R280C6.
- Vgs(th) (Max) @ Id:3.5V @ 430µA
- Vgs (Max):±20V
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-TO247-3
- Series:CoolMOS™
- Rds On (Max) @ Id, Vgs:280 mOhm @ 6.5A, 10V
- Power Dissipation (Max):104W (Tc)
- Packaging:Tube
- Package / Case:TO-247-3
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Input Capacitance (Ciss) (Max) @ Vds:950pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs:43nC @ 10V
- FET Type:N-Channel
- FET Feature:-
- Drive Voltage (Max Rds On, Min Rds On):10V
- Drain to Source Voltage (Vdss):600V
- Current - Continuous Drain (Id) @ 25°C:13.8A (Tc)
We can supply International Rectifier (Infineon Technologies) IPW60R280C6, use the request quote form to request IPW60R280C6 pirce, International Rectifier (Infineon Technologies) Datasheet PDF and lead time.ventronchip.com is a professional electronic components distributor. With 3 Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPW60R280C6.The price and lead time for IPW60R280C6 depending on the quantity required, availability and warehouse location.
The three parts on the right have similar specifications to IPW60R280C6.
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ImagePart NumberManufacturerVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:Factory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyTerminal PositionPin CountJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Radiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)Continuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)View Compare
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IPW60R280C63.5V @ 430µA±20VMOSFET (Metal Oxide)PG-TO247-3CoolMOS™280 mOhm @ 6.5A, 10V104W (Tc)TubeTO-247-3-55°C ~ 150°C (TJ)Through Hole950pF @ 100V43nC @ 10VN-Channel-10V600V13.8A (Tc)------------------------------------------------
-
------------------18 WeeksThrough HoleThrough HoleTO-247-3SILICON-40°C~150°C TJTubeAutomotive, AEC-Q101, CoolMOS™2008yesActive1 (Unlimited)3HIGH RELIABILITYMOSFET (Metal Oxide)SINGLE3R-PSFM-T31SINGLE WITH BUILT-IN DIODE500W TcENHANCEMENT MODE500W22 nsN-ChannelSWITCHING48m Ω @ 29.4A, 10V4.5V @ 2.9mA7440pF @ 100V63.3A Tc270nC @ 10V10ns10V±20V4 ns85 ns63.3A20V650V0.048Ohm228ANoROHS3 CompliantLead Free---
-
---------------------TO-247--Tube-packed-----------------N Channel-70mΩ @ 25.8A,10V3.5V @ 1.72mA--------------RoHS Compliant-600V53A Tc391W Tc
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---------------------PG-TO247-3--Tube-packed-----------------------------------RoHS Compliant----
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