Infineon Technologies IPW60R041C6

Name: IPW60R041C6
Brand: Infineon Technologies
SKU: 2479090-IPW60R041C6
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPW60R041C6

Manufacturer:: Infineon Technologies

Ventron No:: 2479090-IPW60R041C6

Description:: MOSFET N-CH 600V 77.5A TO 247-3

ECAD Model:

Datasheet:: IPW60R041C6

Specifications

Infineon Technologies IPW60R041C6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPW60R041C6.

Vgs(th) (Max) @ Id:
3.5V @ 2.96mA
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
PG-TO247-3
Series:
CoolMOS™
Rds On (Max) @ Id, Vgs:
41 mOhm @ 44.4A, 10V
Power Dissipation (Max):
481W (Tc)
Packaging:
Tube
Package / Case:
TO-247-3
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Input Capacitance (Ciss) (Max) @ Vds:
6530pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
290nC @ 10V
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
77.5A (Tc)

Description

part No. IPW60R041C6 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.

IPW60R041C6 More Descriptions

Power Field-Effect Transistor, 77.5A I(D), 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Product Comparison

The three parts on the right have similar specifications to IPW60R041C6.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Package / Case

Packaging

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

RoHS Status

Factory Lead Time

Mount

Mounting Type

Number of Pins

Supplier Device Package

Operating Temperature

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Power Dissipation-Max

Turn On Delay Time

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Lead Free

View Compare
IPW60R041C6

Infineon Technologies

3.5V @ 2.96mA

±20V

MOSFET (Metal Oxide)

PG-TO247-3

CoolMOS™

41 mOhm @ 44.4A, 10V

481W (Tc)

Tube

TO-247-3

-55°C ~ 150°C (TJ)

Through Hole

6530pF @ 10V

290nC @ 10V

N-Channel

-

10V

600V

77.5A (Tc)

-

-

-

-

-

-

-

-

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-
IPW60R070C6

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TO-247

Tube-packed

N Channel

70mΩ @ 25.8A,10V

3.5V @ 1.72mA

600V

53A Tc

391W Tc

RoHS Compliant

-

-

-

-

-

-

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-

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IPW60R041C6 vs IPW60R070C6
IPW60R160P6FKSA1

Infineon Technologies

-

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-

-

-

-

-

-

-

-

-

-

-

-

-

TO-247-3

Tube

N-Channel

160mOhm @ 9A, 10V

4.5V @ 750μA

600V

-

-

ROHS3 Compliant

18 Weeks

Through Hole

Through Hole

3

PG-TO247-3

-55°C~150°C TJ

CoolMOS™ P6

2008

Active

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

176W Tc

12.5 ns

2080pF @ 100V

23.8A Tc

44nC @ 10V

7.6ns

10V

±20V

5.8 ns

40 ns

23.8A

20V

600V

2.08nF

144mOhm

160 mΩ

Lead Free

IPW60R041C6 vs IPW60R160P6FKSA1
IPW60R075CP

Infineon Technologies

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PG-TO247-3

Tube-packed

-

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-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

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IPW60R041C6 vs IPW60R075CP