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Infineon Technologies IPW60R037P7XKSA1
- Part Number:
- IPW60R037P7XKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2482711-IPW60R037P7XKSA1
- Description:
- MOSFET N-CH 650V 76A TO247-3
- ECAD Model:
-
- Datasheet:
- IPW60R037P7XKSA1
Infineon Technologies IPW60R037P7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPW60R037P7XKSA1.
- Factory Lead Time18 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™ P7
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max255W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation255W
- Case ConnectionDRAIN
- Turn On Delay Time22 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs37m Ω @ 29.5A, 10V
- Vgs(th) (Max) @ Id4V @ 1.48mA
- Input Capacitance (Ciss) (Max) @ Vds5243pF @ 400V
- Current - Continuous Drain (Id) @ 25°C76A Tc
- Gate Charge (Qg) (Max) @ Vgs121nC @ 10V
- Drain to Source Voltage (Vdss)650V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Turn-Off Delay Time90 ns
- Continuous Drain Current (ID)76A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.037Ohm
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)280A
- Avalanche Energy Rating (Eas)295 mJ
- Max Junction Temperature (Tj)150°C
- Height25.4mm
- RoHS StatusROHS3 Compliant
IPW60R037P7XKSA1 Description
The IPW60R037P7XKSA1 is appropriate for managing modest amounts of electricity in portable electronic devices.
IPW60R037P7XKSA1 Features
?An important reduction in switching and conduction losses has been achieved.
?High-performance trench technology is employed for extremely low RDS (ON)
IPW60R037P7XKSA1 Applications
Switching applications
The IPW60R037P7XKSA1 is appropriate for managing modest amounts of electricity in portable electronic devices.
IPW60R037P7XKSA1 Features
?An important reduction in switching and conduction losses has been achieved.
?High-performance trench technology is employed for extremely low RDS (ON)
IPW60R037P7XKSA1 Applications
Switching applications
IPW60R037P7XKSA1 More Descriptions
Single N-Channel 600V 37 mOhm 121 nC CoolMOS Power Mosfet - TO-247-3
Power Field-Effect Transistor, 76A I(D), 600V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Mosfet, N-Ch, 600V, 76A, To-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon IPW60R037P7XKSA1
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
Power Field-Effect Transistor, 76A I(D), 600V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Mosfet, N-Ch, 600V, 76A, To-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon IPW60R037P7XKSA1
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
The three parts on the right have similar specifications to IPW60R037P7XKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Max Junction Temperature (Tj)HeightRoHS StatusContinuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)View Compare
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IPW60R037P7XKSA118 WeeksThrough HoleTO-247-3NOSILICON-55°C~150°C TJTubeCoolMOS™ P72014e3yesActive1 (Unlimited)3EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODE1255W TcENHANCEMENT MODE255WDRAIN22 nsN-ChannelSWITCHING37m Ω @ 29.5A, 10V4V @ 1.48mA5243pF @ 400V76A Tc121nC @ 10V650V10V±20V90 ns76A20V0.037Ohm600V280A295 mJ150°C25.4mmROHS3 Compliant--- -
--PG-TO247-3---Tube-packed-----------------------------------------RoHS Compliant--
-
--TO-247---Tube-packed----------------------N Channel-70mΩ @ 25.8A,10V3.5V @ 1.72mA---600V-----------RoHS Compliant53A Tc391W Tc
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--PG-TO247-3---Tube-packed-----------------------------------------RoHS Compliant--
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