Infineon Technologies IPW50R190CE

Name: IPW50R190CE
Brand: Infineon Technologies
SKU: 2483141-IPW50R190CE
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPW50R190CE

Manufacturer:: Infineon Technologies

Ventron No:: 2483141-IPW50R190CE

Description:: MOSFET N-CH 500V 18.5A TO247

ECAD Model:

Datasheet:: IPW50R190CE

Specifications

Infineon Technologies IPW50R190CE technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPW50R190CE.

Vgs(th) (Max) @ Id:
3.5V @ 510µA
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
PG-TO247-3
Series:
CoolMOS™
Rds On (Max) @ Id, Vgs:
190 mOhm @ 6.2A, 13V
Power Dissipation (Max):
127W (Tc)
Packaging:
Tube
Package / Case:
TO-247-3
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Input Capacitance (Ciss) (Max) @ Vds:
1137pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:
47.2nC @ 10V
FET Type:
N-Channel
FET Feature:
Super Junction
Drive Voltage (Max Rds On, Min Rds On):
13V
Drain to Source Voltage (Vdss):
500V
Current - Continuous Drain (Id) @ 25°C:
18.5A (Tc)

Description

The IPW50R190CE is MOSFET N-CH 500V 18.5A TO247 , it is part of CoolMOS™ series. they are designed to work as Transistors - FETs, MOSFETs - Single.IPW50R190CE with pin details manufactured by International Rectifier (Infineon Technologies). The IPW50R190CE is available in PG-TO247-3 Package,it is part of the electronic component Chips.that includes CoolMOS™ Series. they are designed to operate as Transistors - FETs, MOSFETs - Single.it is with Operating Temperature -55°C ~ 150°C (TJ).IPW50R190CE with original stock manufactured by International Rectifier (Infineon Technologies). The IPW50R190CE is available in PG-TO247-3 Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of IPW50R190CEis designed to work in TO-247-3, it's Operating Temperature is -55°C ~ 150°C (TJ).The IPW50R190CE is available in TO-247-3 Package, is part of the Transistors - FETs, MOSFETs - Single and belong to Discrete Semiconductor Products.IPW50R190CE with EDA / CAD Models manufactured by International Rectifier (Infineon Technologies). The IPW50R190CE is available in PG-TO247-3Package, is part of the Discrete Semiconductor Products.The IPW50R190CE is Transistors - FETs, MOSFETs - Single with package TO-247-3 manufactured by International Rectifier (Infineon Technologies). The IPW50R190CE is available in PG-TO247-3 Package, is part of the MOSFET N-CH 500V 18.5A TO247.

IPW50R190CE More Descriptions

MOSFET Transistor, N Channel, 18.5 A, 500 V, 0.17 ohm, 13 V, 3 V
Transistor MOSFET N-CH 550V 24.8A 3-Pin TO-247 Tube
Trans MOSFET N-CH 500V 18.5A 3-Pin(3 Tab) TO-247 Tube

Product Comparison

The three parts on the right have similar specifications to IPW50R190CE.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

View Compare
IPW50R190CE

Infineon Technologies

3.5V @ 510µA

±20V

MOSFET (Metal Oxide)

PG-TO247-3

CoolMOS™

190 mOhm @ 6.2A, 13V

127W (Tc)

Tube

TO-247-3

-55°C ~ 150°C (TJ)

Through Hole

1137pF @ 100V

47.2nC @ 10V

N-Channel

Super Junction

13V

500V

18.5A (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPW50R199CPFKSA1

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

TO-247-3

PG-TO247-3

-55°C~150°C TJ

Tube

CoolMOS™

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

139W Tc

N-Channel

199mOhm @ 9.9A, 10V

3.5V @ 660μA

1.8pF @ 100V

17A Tc

45nC @ 10V

550V

10V

±20V

ROHS3 Compliant

IPW50R190CE vs IPW50R199CPFKSA1
IPW50R350CPFKSA1

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

TO-247-3

PG-TO247-3

-55°C~150°C TJ

Tube

CoolMOS™

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

89W Tc

N-Channel

350mOhm @ 5.6A, 10V

3.5V @ 370μA

1.02pF @ 100V

10A Tc

25nC @ 10V

550V

10V

±20V

ROHS3 Compliant

IPW50R190CE vs IPW50R350CPFKSA1
IPW50R250CP

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

PG-TO247-3

-

-

Tube-packed

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

IPW50R190CE vs IPW50R250CP

Certification

Related parts for IPW50R190CE

IPW50R399CPFKSA1

Infineon Technologies

MOSFET N-CH 560V 9A TO-247
IPW50R199CPFKSA1

Infineon Technologies

MOSFET N-CH 550V 17A TO-247
IPW50R350CPFKSA1

Infineon Technologies

MOSFET N-CH 550V 10A TO247-3
IPW50R190CE

Infineon Technologies

MOSFET N-CH 500V 18.5A TO247
IPW50R250CP

Infineon Technologies

MOSFET N-CH 500V 13A TO-247

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Part Number	Manufacturers	Description	Stock	Price
IPW50R190CEFKSA1 DISTI #31672692	Infineon Technologies AG	Trans MOSFET N-CH 500V 18.5A 3-Pin(3 Tab) TO-247 T RoHS: Compliant	480	240 $1.3824 500 $1.2096 1000 $1.008 2500 $0.9331 5000 $0.8986 10000 $0.864
IPW50R190CEFKSA1 DISTI #IPW50R190CEFKSA1-ND	Infineon Technologies AG	MOSFET N-CH 500V 18.5A TO247 RoHS: Compliant	0
IPW50R190CE DISTI #IPW50R190CE	Infineon Technologies AG	Transistor MOSFET N-CH 550V 24.8A 3-Pin TO-247 Tub	0	379 $0.9509 381 $0.9159 760 $0.8829 1895 $0.8529 3790 $0.8379
IPW50R190CEFKSA1 DISTI #IPW50R190CEFKSA1	Infineon Technologies AG	Trans MOSFET N-CH 550V 18.5A 3-Pin TO-247 Tube - B	0	379 $0.9509 381 $0.9159 760 $0.8829 1895 $0.8529 3790 $0.8379
IPW50R190CEFKSA1 DISTI #50Y2084	Infineon Technologies AG	MOSFET Transistor, N Channel, 18.5 A, 500 V, 0.17	0
IPW50R190CE DISTI #726-IPW50R190CE	Infineon Technologies AG	MOSFET N-Ch 500V 63A TO247-3 RoHS: Compliant	956	1 $2.11 10 $1.79 100 $1.43 500 $1.25 1000 $1.04
IPW50R190CEFKSA1 DISTI #726-IPW50R190CEFKSA1	Infineon Technologies AG	MOSFET N-Ch 500V 63A TO247-3 RoHS: Compliant	1	1 $2.11 10 $1.79 100 $1.43 500 $1.25 1000 $1.04
IPW50R190CE DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 500V, 0.19ohm, 1-El RoHS: Compliant	1350	1 $1.07 25 $0.99 100 $0.95 500 $0.91 1000 $0.87
IPW50R190CEFKSA1 DISTI #	Infineon Technologies AG	Power Field-Effect Transistor, 500V, 0.19ohm, 1-El RoHS: Compliant	64744	1 $1.07 25 $0.99 100 $0.95 500 $0.91 1000 $0.87
IPW50R190CEFKSA1 DISTI #9140236	Infineon Technologies AG	MOSFET NCHANNEL 500V 18.5A COOLMOS TO247, PK	150	6 $1.46 12 $1.235 60 $1.112 120 $0.998 300 $0.975
IPW50R190CEFKSA1 DISTI #2480873	Infineon Technologies AG	MOSFET, N-CH, 500V, 18.5A, TO-247-3 RoHS: Compliant	0	1 $3.18 10 $2.7 100 $2.16 500 $1.88 1000 $1.57

Infineon Technologies IPW50R190CE

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