Infineon Technologies IPU05N03LA G

IPU05N03LA G Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 300 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3110pF @ 15V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 50A.Peak drain current is 350A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 25V.For this transistor to work, a voltage 25V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

IPU05N03LA G Features
the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 350A.
a 25V drain to source voltage (Vdss)


IPU05N03LA G Applications
There are a lot of Infineon Technologies
IPU05N03LA G applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies