Infineon Technologies IPT059N15N3ATMA1

Name: IPT059N15N3ATMA1
Brand: Infineon Technologies
SKU: 3586178-IPT059N15N3ATMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPT059N15N3ATMA1

Manufacturer:: Infineon Technologies

Ventron No:: 3586178-IPT059N15N3ATMA1

Description:: MOSFET N-CH 150V 155A 8HSOF

ECAD Model:

Datasheet:: IPT059N15N3ATMA1

Specifications

Infineon Technologies IPT059N15N3ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPT059N15N3ATMA1.

Factory Lead Time
18 Weeks
Mounting Type
Surface Mount
Package / Case
8-PowerSFN
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2012
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-F2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
375W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.9m Ω @ 150A, 10V
Vgs(th) (Max) @ Id
4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds
7200pF @ 75V
Current - Continuous Drain (Id) @ 25°C
155A Tc
Gate Charge (Qg) (Max) @ Vgs
92nC @ 10V
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
8V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
155A
Drain-source On Resistance-Max
0.0059Ohm
Pulsed Drain Current-Max (IDM)
620A
DS Breakdown Voltage-Min
150V
Avalanche Energy Rating (Eas)
520 mJ
RoHS Status
ROHS3 Compliant

Description

IPT059N15N3ATMA1 Description
The IPT059N15N3 is an N-channel Power MOSFET optimized for high-current applications. This new package is a perfect solution for high-power applications where the highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor IPT059N15N3 is in the HSOF-8 package with 375W power dissipation.

IPT059N15N3ATMA1 Features
N-channel, normal level
Excellent gate charge xRDS(on) product(FOM)
Very low on-resistance RDS(on)
175°C operating temperature
Pb-free lead plating; RoH Compliant
Qualified according to JEDEC1) for a target application
Ideal for high-frequency switching and synchronous rectification

IPT059N15N3ATMA1 Applications
Forklift
Light electric vehicles (LEV) e.g. e-scooter, e-bikes or μ-car
Point-of-load (POL)
Telecom
efuse

IPT059N15N3ATMA1 More Descriptions

Single N-Channel 150 V 5.9 mOhm 69 nC OptiMOS Power Mosfet - HSOF-8-1
MOSFET, N-CH, 150V, 115A, HSOF-8; Transistor Polarity:N Channel; Continuous Drain Current Id:115A; Source Voltage Vds:150V; On Resistance
Infineon's TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom, PG-HSOF-8, RoHSInfineon SCT
MOSFET, N-CH, 150V, 115A, HSOF-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 115A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.005ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 375W; Transistor Case Style: HSOF; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The new TO-Leadless package is optimized for high current applications such as forklift, light electric vehicles (LEV), POL (point-of-load) and telecom. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. | Summary of Features: Industrys lowest R DS(on); Highest current capability up to 300A; Very low package parasitics and inductances | Benefits: Less paralleling and cooling required; Highest system reliability; System cost reduction; Enabling very compact design | Target Applications: Forklift; Light electric vehicles (LEV) e.g. e-scooter, e-bikes or -car; Point-of-load (POL); Telecom; efuse

Product Comparison

The three parts on the right have similar specifications to IPT059N15N3ATMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Manufacturer Package Identifier

Additional Feature

Number of Channels

Power Dissipation

Turn On Delay Time

Halogen Free

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Height

Lead Free

View Compare
IPT059N15N3ATMA1

Infineon Technologies

18 Weeks

Surface Mount

8-PowerSFN

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2012

e3

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

FLAT

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-F2

1

SINGLE WITH BUILT-IN DIODE

375W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

5.9m Ω @ 150A, 10V

4V @ 270μA

7200pF @ 75V

155A Tc

92nC @ 10V

150V

8V 10V

±20V

155A

0.0059Ohm

620A

150V

520 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPT020N10N3ATMA1

Infineon Technologies

18 Weeks

Surface Mount

8-PowerSFN

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2012

e3

Active

1 (Unlimited)

8

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

FLAT

260

not_compliant

40

-

1

SINGLE WITH BUILT-IN DIODE

375W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

-

2m Ω @ 150A, 10V

3.5V @ 272μA

11200pF @ 50V

300A Tc

156nC @ 10V

-

6V 10V

±20V

-

0.02Ohm

-

-

-

ROHS3 Compliant

Surface Mount

8

PG-HSOF-8

ULTRA LOW RESISTANCE

1

375W

34 ns

Halogen Free

84 ns

300A

2V

20V

100V

100V

175°C

2.4mm

Contains Lead

IPT059N15N3ATMA1 vs IPT020N10N3ATMA1
IPT043N15N5ATMA1

Infineon Technologies

26 Weeks

-

-

-

-

-

Tape & Reel (TR)

-

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IPT059N15N3ATMA1 vs IPT043N15N5ATMA1
IPT007N06NATMA1

Infineon Technologies

18 Weeks

Surface Mount

8-PowerSFN

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2012

e3

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

FLAT

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-F2

1

SINGLE WITH BUILT-IN DIODE

375W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

-

0.75m Ω @ 150A, 10V

3.3V @ 280μA

16000pF @ 30V

300A Tc

287nC @ 10V

-

6V 10V

±20V

52A

0.00075Ohm

-

-

-

ROHS3 Compliant

Surface Mount

8

-

-

-

375W

-

Halogen Free

-

300A

-

20V

60V

-

-

-

Contains Lead

IPT059N15N3ATMA1 vs IPT007N06NATMA1

Certification

Related parts for IPT059N15N3ATMA1

IPT059N15N3ATMA1

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IPT012N08N5ATMA1

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IPT020N10N3ATMA1

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MOSFET N-CH 100V 300A 8HSOF
IPT043N15N5ATMA1

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IPT007N06NATMA1

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IPT059N15N3ATMA1 Specification

Part Number	Manufacturers	Description	Price
IPT059N15N3ATMA1 DISTI #V36:1790_06377616	Infineon Technologies AG	Trans MOSFET N-CH 150V 155A Automotive 9-Pin(8 Tab RoHS: Compliant	2000 $4.602 20000 $4.554 200000 $4.265 1000000 $4.088 2000000 $4.086
IPT059N15N3ATMA1 DISTI #V72:2272_06377616	Infineon Technologies AG	Trans MOSFET N-CH 150V 155A Automotive 9-Pin(8 Tab RoHS: Compliant
IPT059N15N3ATMA1 DISTI #IPT059N15N3ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 150V 155A 8HSOF RoHS: Compliant	2000 $3.8347
IPT059N15N3ATMA1 DISTI #IPT059N15N3ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 150V 155A 8HSOF RoHS: Compliant	1 $7.23 10 $6.532 100 $5.4081 500 $4.7093 1000 $4.10165
IPT059N15N3ATMA1 DISTI #IPT059N15N3ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 155A 8HSOF RoHS: Compliant	1 $7.23 10 $6.532 100 $5.4081 500 $4.7093 1000 $4.10165
IPT059N15N3ATMA1 DISTI #IPT059N15N3ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 150V 155A 8-Pin HSOF T/R - Tape RoHS: Compliant	2000 $3.99 4000 $3.89 8000 $3.69 12000 $3.59 20000 $3.49
IPT059N15N3ATMA1 DISTI #IPT059N15N3	Infineon Technologies AG	Trans MOSFET N-CH 150V 155A 8-Pin HSOF T/R (Alt: I RoHS: Compliant	2000 $4.01329 4000 $3.90181 6000 $3.79635 10000 $3.69645 20000 $3.64844 50000 $3.60167 100000 $3.55608
IPT059N15N3ATMA1 DISTI #SP001100162	Infineon Technologies AG	Trans MOSFET N-CH 150V 155A 8-Pin HSOF T/R (Alt: S RoHS: Compliant	2000 $3.79 4000 $3.59 8000 $3.49 12000 $3.19 20000 $2.99
IPT059N15N3ATMA1 DISTI #50Y2080	Infineon Technologies AG	MOSFET, N-CH, 150V, 115A, 175DEG C, 375W, Transis	1 $6.75 10 $6.1 25 $5.82 50 $5.43 100 $5.05 250 $4.82 500 $4.39 1000 $3.83
IPT059N15N3 DISTI #726-IPT059N15N3	Infineon Technologies AG	MOSFET MV POWER MOS RoHS: Compliant	1 $6.68 10 $6.04 25 $5.76 100 $5 250 $4.77 500 $4.35 1000 $3.79 2000 $3.65
IPT059N15N3ATMA1 DISTI #726-IPT059N15N3ATMA1	Infineon Technologies AG	MOSFET MV POWER MOS RoHS: Compliant	1 $6.68 10 $6.04 25 $5.76 100 $5 250 $4.77 500 $4.35 1000 $3.79 2000 $3.65
IPT059N15N3ATMA1 DISTI #2480870RL	Infineon Technologies AG	MOSFET, N-CH, 150V, 115A, HSOF-8 RoHS: Compliant	1 $10.9 10 $9.85 100 $8.15
IPT059N15N3ATMA1 DISTI #2480870	Infineon Technologies AG	MOSFET, N-CH, 150V, 115A, HSOF-8 RoHS: Compliant	1 $10.9 10 $9.85 100 $8.15
IPT059N15N3ATMA1 DISTI #2480870	Infineon Technologies AG	MOSFET, N-CH, 150V, 115A, HSOF-8	1 $6.64 10 $5.22 100 $4.54

IPT059N~~(3)~~
IPT059~~(3)~~
IPT05~~(3)~~
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Infineon Technologies IPT059N15N3ATMA1

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