Infineon Technologies IPS13N03LA G
- Part Number:
- IPS13N03LA G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586859-IPS13N03LA G
- Description:
- MOSFET N-CH 25V 30A IPAK
- Datasheet:
- IPx13N03LA G
Infineon Technologies IPS13N03LA G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPS13N03LA G.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Stub Leads, IPak
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesOptiMOS™
- Published2008
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max46W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs12.8m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id2V @ 20μA
- Input Capacitance (Ciss) (Max) @ Vds1043pF @ 15V
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs8.3nC @ 5V
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)30A
- Drain-source On Resistance-Max0.0128Ohm
- Pulsed Drain Current-Max (IDM)210A
- DS Breakdown Voltage-Min25V
- Avalanche Energy Rating (Eas)60 mJ
- RoHS StatusRoHS Compliant
IPS13N03LA G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 60 mJ.A device's maximum input capacitance is 1043pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 30A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 210A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 25V.To operate this transistor, you need to apply a 25V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IPS13N03LA G Features
the avalanche energy rating (Eas) is 60 mJ
based on its rated peak drain current 210A.
a 25V drain to source voltage (Vdss)
IPS13N03LA G Applications
There are a lot of Infineon Technologies
IPS13N03LA G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 60 mJ.A device's maximum input capacitance is 1043pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 30A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 210A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 25V.To operate this transistor, you need to apply a 25V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IPS13N03LA G Features
the avalanche energy rating (Eas) is 60 mJ
based on its rated peak drain current 210A.
a 25V drain to source voltage (Vdss)
IPS13N03LA G Applications
There are a lot of Infineon Technologies
IPS13N03LA G applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IPS13N03LA G More Descriptions
Multilayer Ceramic Capacitors MLCC - SMD/SMT 390pF 100Volts C0G 0.02
MOSFET N-CH 25V 30A TO251-3
MOSFET N-CH 25V 30A TO251-3
The three parts on the right have similar specifications to IPS13N03LA G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSupplier Device PackagePbfree CodeHTS CodeMountNumber of PinsHalogen FreeContinuous Drain Current (ID)Max Dual Supply VoltageLead FreeView Compare
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IPS13N03LA GThrough HoleTO-251-3 Stub Leads, IPakNOSILICON-55°C~175°C TJTubeOptiMOS™2008e3Obsolete3 (168 Hours)3EAR99MATTE TINLOGIC LEVEL COMPATIBLEFET General Purpose PowerMOSFET (Metal Oxide)SINGLENOT SPECIFIEDcompliantNOT SPECIFIED3R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE46W TcENHANCEMENT MODEN-ChannelSWITCHING12.8m Ω @ 30A, 10V2V @ 20μA1043pF @ 15V30A Tc8.3nC @ 5V25V4.5V 10V±20V30A0.0128Ohm210A25V60 mJRoHS Compliant----------
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Through HoleTO-251-3 Stub Leads, IPak---55°C~175°C TJTubeOptiMOS™--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)---------38W Tc-N-Channel-10.5mOhm @ 30A, 10V2.2V @ 250μA1.5pF @ 15V35A Tc14nC @ 10V30V4.5V 10V±20V-----ROHS3 CompliantPG-TO251-3--------
-
Through HoleTO-251-3 Stub Leads, IPakNOSILICON-55°C~175°C TJTubeOptiMOS™2010-Obsolete1 (Unlimited)3EAR99-AVALANCHE RATED, LOGIC LEVEL COMPATIBLE-MOSFET (Metal Oxide)SINGLENOT SPECIFIEDcompliantNOT SPECIFIED3R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE31W TcENHANCEMENT MODEN-ChannelSWITCHING13.5m Ω @ 30A, 10V2.2V @ 250μA1000pF @ 15V30A Tc10nC @ 10V30V4.5V 10V±20V30A0.0135Ohm210A30V20 mJRoHS Compliant-no8541.29.00.95------
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Through HoleTO-251-3 Stub Leads, IPak-SILICON-55°C~175°C TJTubeOptiMOS™2008e3Obsolete1 (Unlimited)3EAR99Tin (Sn)--MOSFET (Metal Oxide)SINGLE---4-Not Qualified1SINGLE WITH BUILT-IN DIODE136W TcENHANCEMENT MODEN-ChannelSWITCHING11m Ω @ 75A, 10V4V @ 83μA4310pF @ 60V75A Tc65nC @ 10V-10V±20V-0.011Ohm--120 mJRoHS Compliant-no-Through Hole3Not Halogen Free75A120VContains Lead
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