Infineon Technologies IPP65R150CFDXKSA1

Name: IPP65R150CFDXKSA1
Brand: Infineon Technologies
SKU: 2484903-IPP65R150CFDXKSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPP65R150CFDXKSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2484903-IPP65R150CFDXKSA1

Description:: MOSFET N-CH 650V 22.4A TO220

ECAD Model:

Datasheet:: IPP65R150CFDXKSA1

Specifications

Infineon Technologies IPP65R150CFDXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP65R150CFDXKSA1.

Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
CoolMOS™
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
195.3W Tc
Operating Mode
ENHANCEMENT MODE
Turn On Delay Time
12.4 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
150m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 900μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
2340pF @ 100V
Current - Continuous Drain (Id) @ 25°C
22.4A Tc
Gate Charge (Qg) (Max) @ Vgs
86nC @ 10V
Rise Time
7.6ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
5.6 ns
Turn-Off Delay Time
52.8 ns
Continuous Drain Current (ID)
22.4A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Max Dual Supply Voltage
650V
Pulsed Drain Current-Max (IDM)
72A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IPP65R150CFDXKSA1 Description
A high-voltage MOSFET (metal-oxide semiconductor field-effect transistor) made by Infineon Technologies is designated for use in power electronics applications. It is a member of the very reliable, high-performance CoolMOS series of power MOSFETs made by Infineon. The 650V voltage rating of the IPP65R150CFDXKSA1 MOSFET allows it to handle large current and power levels. In order to reduce power losses and increase overall efficiency, it has a low on-state resistance (RDS(on)) of 150m. Also, the device is built with a quick switching rate that enables high-frequency operation in power conversion applications.

IPP65R150CFDXKSA1 Features
Compact package
High voltage rating
Fast switching speed
Low on-state resistance
Robust protection features
High current handling capability

IPP65R150CFDXKSA1 Applications
Motor drives
Solar inverters
Power supplies
Audio amplifiers
Lighting systems
Uninterruptible power supplies (UPS)

IPP65R150CFDXKSA1 More Descriptions

Trans MOSFET N-CH 650V 22.4A Automotive 3-Pin(3 Tab) TO-220 Tube
IPP65R150CFD Series 650 V 22.4A CoolMOS CFD2 Power Transistor - TO-220-3
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHSInfineon SCT
Mosfet, N-Ch, 650V, 22.4A, To-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon IPP65R150CFDXKSA1
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

Product Comparison

The three parts on the right have similar specifications to IPP65R150CFDXKSA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Pulsed Drain Current-Max (IDM)

RoHS Status

Lead Free

Max Operating Temperature

Min Operating Temperature

Subcategory

Qualification Status

Power Dissipation

Drain to Source Voltage (Vdss)

Polarity/Channel Type

Drain-source On Resistance-Max

FET Technology

Surface Mount

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Number of Pins

Supplier Device Package

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IPP65R150CFDXKSA1

Infineon Technologies

18 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

CoolMOS™

2008

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

195.3W Tc

ENHANCEMENT MODE

12.4 ns

N-Channel

SWITCHING

150m Ω @ 9.3A, 10V

4.5V @ 900μA

Halogen Free

2340pF @ 100V

22.4A Tc

86nC @ 10V

7.6ns

10V

±20V

5.6 ns

52.8 ns

22.4A

TO-220AB

30V

650V

72A

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPP60R450E6

Infineon Technologies

-

Through Hole

-

TO-220

-

-

-

-

-

-

yes

-

-

3

-

-

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

-

ENHANCEMENT MODE

11 ns

-

SWITCHING

-

-

Halogen Free

-

-

-

9ns

-

-

10 ns

70 ns

9.2A

-

20V

600V

26A

RoHS Compliant

Lead Free

150°C

-55°C

FET General Purpose Power

Not Qualified

74W

600V

N-CHANNEL

0.45Ohm

METAL-OXIDE SEMICONDUCTOR

-

-

-

-

-

-

-

-

-

IPP65R150CFDXKSA1 vs IPP60R450E6
IPP60R099CPXKSA1

Infineon Technologies

12 Weeks

-

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

CoolMOS™

2007

e3

yes

Not For New Designs

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

255W Tc

ENHANCEMENT MODE

-

N-Channel

SWITCHING

99m Ω @ 18A, 10V

3.5V @ 1.2mA

-

2800pF @ 100V

31A Tc

80nC @ 10V

-

10V

±20V

-

-

-

TO-220AB

-

-

93A

ROHS3 Compliant

-

-

-

-

Not Qualified

-

650V

-

0.099Ohm

-

NO

31A

600V

800 mJ

-

-

-

-

-

IPP65R150CFDXKSA1 vs IPP60R099CPXKSA1
IPP65R125C7XKSA1

Infineon Technologies

18 Weeks

Through Hole

Through Hole

TO-220-3

-

-55°C~150°C TJ

Tube

CoolMOS™ C7

2008

-

-

Active

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

101W Tc

-

14 ns

N-Channel

-

125mOhm @ 8.9A, 10V

4V @ 440μA

Halogen Free

1670pF @ 400V

18A Tc

35nC @ 10V

15ns

10V

±20V

8 ns

71 ns

18A

-

20V

650V

-

ROHS3 Compliant

Lead Free

150°C

-55°C

-

-

-

650V

-

-

-

-

-

-

-

3

PG-TO220-3

1.67nF

110mOhm

125 mΩ

IPP65R150CFDXKSA1 vs IPP65R125C7XKSA1

Certification

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IPP65R1~~(17)~~
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Part Number	Manufacturers	Description	Stock	Price
IPP65R150CFDXKSA1 DISTI #V36:1790_06378609	Infineon Technologies AG	Trans MOSFET N-CH 650V 22.4A 3-Pin(3 Tab) TO-220 T RoHS: Compliant	0
IPP65R150CFDXKSA1 DISTI #V99:2348_06378609	Infineon Technologies AG	Trans MOSFET N-CH 650V 22.4A 3-Pin(3 Tab) TO-220 T RoHS: Compliant	0
IPP65R150CFDXKSA1 DISTI #IPP65R150CFDXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 22.4A TO220 RoHS: Compliant	0	1 $3.86 10 $3.467 25 $3.2772 100 $2.8404 500 $2.41798 2500 $1.9373 5000 $1.86447
IPP65R150CFDXKSA1 DISTI #IPP65R150CFDXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 22.4A 3-Pin TO-220 Tube - R RoHS: Compliant	0	500 $1.89 1000 $1.79 2000 $1.69 3000 $1.69 5000 $1.59
IPP65R150CFDXKSA1 DISTI #SP000907024	Infineon Technologies AG	Trans MOSFET N-CH 700V 22.4A 3-Pin TO-220 Tube (Al RoHS: Compliant	0	1 $2.29 10 $1.89 25 $1.69 50 $1.69 100 $1.59 500 $1.49 1000 $1.49
IPP65R150CFDXKSA1 DISTI #726-IPP65R150CFDXKSA	Infineon Technologies AG	MOSFET N-Ch 700V 22.4A TO220-3 RoHS: Compliant	0	1 $3.5 10 $2.98 100 $2.58 250 $2.45 500 $2.19 1000 $1.85 2500 $1.76
IPP65R150CFD DISTI #726-IPP65R150CFD	Infineon Technologies AG	MOSFET N-Ch 700V 22.4A TO220-3 RoHS: Compliant	0	1 $3.5 10 $2.98 100 $2.58 250 $2.45 500 $2.19
IPP65R150CFDXKSA1 DISTI #8977598P	Infineon Technologies AG	MOSFET N-CH 650V 22.4A COOLMOS TO220, TU	622	20 $2.038 40 $1.935
IPP65R150CFDXKSA1 DISTI #2726072	Infineon Technologies AG	MOSFET, N-CH, 650V, 22.4A, TO-220-3 RoHS: Compliant	0	1 $6.19 10 $5.52 100 $4.53 500 $3.68 1000 $3.1
IPP65R150CFDXKSA1 DISTI #2726072	Infineon Technologies AG	MOSFET, N-CH, 650V, 22.4A, TO-220-3	0	1 $3.03 10 $2.29 100 $1.99 250 $1.89 500 $1.69

Infineon Technologies IPP65R150CFDXKSA1

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