Infineon Technologies IPP60R180P7XKSA1
- Part Number:
- IPP60R180P7XKSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2484382-IPP60R180P7XKSA1
- Description:
- MOSFET N-CH 650V 18A TO220-3
- ECAD Model:
-
- Datasheet:
- IPP60R180P7XKSA1
Infineon Technologies IPP60R180P7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP60R180P7XKSA1.
- Factory Lead Time18 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™ P7
- Published2014
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max72W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs180m Ω @ 5.6A, 10V
- Vgs(th) (Max) @ Id4V @ 280μA
- Input Capacitance (Ciss) (Max) @ Vds1081pF @ 400V
- Current - Continuous Drain (Id) @ 25°C18A Tc
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Drain to Source Voltage (Vdss)650V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain-source On Resistance-Max0.18Ohm
- Pulsed Drain Current-Max (IDM)53A
- DS Breakdown Voltage-Min600V
- Avalanche Energy Rating (Eas)56 mJ
- RoHS StatusROHS3 Compliant
IPP60R180P7XKSA1 Description
IPP60R180P7XKSA1 MOSFET is built on well-established silicon processes that provide designers with a wide selection of devices. IPP60R180P7XKSA1 power MOSFET is available in various through-hole and surface-mount packages with standard footprints for designing. Infineon Technologies IPP60R180P7XKSA1 is utilized in TV power supply, Industrial SMPS, Server, Telecom , and Lighting.
IPP60R180P7XKSA1 Features
ESD ruggedness
Integrated gate resistor
Rugged body diode
Wide portfolio in through hole
Surface mount packages
IPP60R180P7XKSA1 Applications
TV power supply
Industrial SMPS
Server
Telecom
Lighting
IPP60R180P7XKSA1 More Descriptions
Optimized power MOSFETs merging high energy efficiency with ease-of-use, PG-TO220-3, RoHSInfineon SCT
N-Channel 650 V 180 mOhm 25 nC CoolMOS Power Mosfet - TO-220
MOSFET, N-CH, 600V, 18A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.145ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Po
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
N-Channel 650 V 180 mOhm 25 nC CoolMOS Power Mosfet - TO-220
MOSFET, N-CH, 600V, 18A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.145ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Po
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
The three parts on the right have similar specifications to IPP60R180P7XKSA1.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountMax Operating TemperatureMin Operating TemperatureSubcategoryPin CountQualification StatusPower DissipationTurn On Delay TimeHalogen FreeRise TimePolarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageFET TechnologyLead FreeNumber of PinsJESD-609 CodeTerminal FinishVoltage - Rated DCCurrent RatingSupplier Device PackageInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IPP60R180P7XKSA118 WeeksThrough HoleTO-220-3NOSILICON-55°C~150°C TJTubeCoolMOS™ P72014yesActive1 (Unlimited)3EAR99MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODE72W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING180m Ω @ 5.6A, 10V4V @ 280μA1081pF @ 400V18A Tc25nC @ 10V650V10V±20VTO-220AB0.18Ohm53A600V56 mJROHS3 Compliant---------------------------- -
--TO-220------yes--3--SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODE-ENHANCEMENT MODE--SWITCHING-----600V---0.6Ohm---RoHS CompliantThrough Hole150°C-55°CFET General Purpose Power3Not Qualified63W10 nsHalogen Free8nsN-CHANNEL11 ns58 ns7.3A20V600VMETAL-OXIDE SEMICONDUCTORLead Free---------
-
12 WeeksThrough HoleTO-220-3-SILICON-55°C~150°C TJTubeCoolMOS™2007yesNot For New Designs1 (Unlimited)3-MOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIED-1SINGLE WITH BUILT-IN DIODE208W TcENHANCEMENT MODE-N-ChannelSWITCHING125m Ω @ 16A, 10V3.5V @ 1.1mA2500pF @ 100V25A Tc70nC @ 10V650V10V±20VTO-220AB-82A-708 mJROHS3 CompliantThrough Hole---3Not Qualified208W15 nsHalogen Free5ns--50 ns25A20V600V-Lead Free3e3Tin (Sn)600V25A----
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12 WeeksThrough HoleTO-220-3---55°C~150°C TJTubeCoolMOS™ P62013-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)------63W Tc--N-Channel-600mOhm @ 2.4A, 10V4.5V @ 200μA557pF @ 100V7.3A Tc12nC @ 10V600V10V±20V-----RoHS CompliantThrough Hole150°C-55°C----11 nsHalogen Free7ns-14 ns33 ns7.3A20V600V-Lead Free3----PG-TO220-3557pF540mOhm600 mΩ
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