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IPP60R125P6XKSA1

Infineon Technologies IPP60R125P6XKSA1

Part Number:
IPP60R125P6XKSA1
Manufacturer:
Infineon Technologies
Ventron No:
2849237-IPP60R125P6XKSA1
Description:
MOSFET N-CH 600V TO220-3
ECAD Model:
Datasheet:
IPP60R125P6XKSA1

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Specifications
Infineon Technologies IPP60R125P6XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP60R125P6XKSA1.
  • Factory Lead Time
    18 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    CoolMOS™ P6
  • Published
    2014
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    219W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    125m Ω @ 11.6A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 960μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    2660pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    30A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    56nC @ 10V
  • Rise Time
    9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    5 ns
  • Turn-Off Delay Time
    44 ns
  • Continuous Drain Current (ID)
    30A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Max Dual Supply Voltage
    600V
  • Drain-source On Resistance-Max
    0.125Ohm
  • Pulsed Drain Current-Max (IDM)
    87A
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IPP60R125P6XKSA1 Overview
A device's maximum input capacitance is 2660pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 44 ns.Its maximum pulsed drain current is 87A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Powered by 600V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.

IPP60R125P6XKSA1 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 44 ns
based on its rated peak drain current 87A.


IPP60R125P6XKSA1 Applications
There are a lot of Infineon Technologies
IPP60R125P6XKSA1 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IPP60R125P6XKSA1 More Descriptions
Single N-Channel 600 V 125 mOhm 56 nC CoolMOS™ Power Mosfet - TO-220-3
Trans MOSFET N-CH 650V 30A 3-Pin TO-220 Tube - Rail/Tube
Mosfet, N-Ch, 600V, 30A, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.113Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes |Infineon IPP60R125P6XKSA1
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHSInfineon SCT
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Product Comparison
The three parts on the right have similar specifications to IPP60R125P6XKSA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    RoHS Status
    Lead Free
    Surface Mount
    Pin Count
    JESD-30 Code
    Qualification Status
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Power Dissipation
    View Compare
  • IPP60R125P6XKSA1
    IPP60R125P6XKSA1
    Infineon Technologies
    18 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™ P6
    2014
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    1
    SINGLE WITH BUILT-IN DIODE
    219W Tc
    ENHANCEMENT MODE
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    125m Ω @ 11.6A, 10V
    4.5V @ 960μA
    Halogen Free
    2660pF @ 100V
    30A Tc
    56nC @ 10V
    9ns
    10V
    ±20V
    5 ns
    44 ns
    30A
    TO-220AB
    30V
    600V
    0.125Ohm
    87A
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPP60R099CPXKSA1
    IPP60R099CPXKSA1
    Infineon Technologies
    12 Weeks
    -
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2007
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    3
    -
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    1
    SINGLE WITH BUILT-IN DIODE
    255W Tc
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    99m Ω @ 18A, 10V
    3.5V @ 1.2mA
    -
    2800pF @ 100V
    31A Tc
    80nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    TO-220AB
    -
    -
    0.099Ohm
    93A
    ROHS3 Compliant
    -
    NO
    3
    R-PSFM-T3
    Not Qualified
    650V
    31A
    600V
    800 mJ
    -
    -
    -
    -
    -
    -
    -
    IPP60R125P6XKSA1 vs IPP60R099CPXKSA1
  • IPP65R125C7XKSA1
    IPP65R125C7XKSA1
    Infineon Technologies
    18 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~150°C TJ
    Tube
    CoolMOS™ C7
    2008
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    101W Tc
    -
    -
    14 ns
    N-Channel
    -
    125mOhm @ 8.9A, 10V
    4V @ 440μA
    Halogen Free
    1670pF @ 400V
    18A Tc
    35nC @ 10V
    15ns
    10V
    ±20V
    8 ns
    71 ns
    18A
    -
    20V
    650V
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    650V
    -
    -
    -
    PG-TO220-3
    150°C
    -55°C
    1.67nF
    110mOhm
    125 mΩ
    -
    IPP60R125P6XKSA1 vs IPP65R125C7XKSA1
  • IPP65R280C6XKSA1
    IPP65R280C6XKSA1
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2008
    -
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    1
    SINGLE WITH BUILT-IN DIODE
    104W Tc
    ENHANCEMENT MODE
    -
    13 ns
    N-Channel
    SWITCHING
    280m Ω @ 4.4A, 10V
    3.5V @ 440μA
    Halogen Free
    950pF @ 100V
    13.8A Tc
    45nC @ 10V
    11ns
    10V
    ±20V
    12 ns
    105 ns
    13.8A
    TO-220AB
    20V
    650V
    0.28Ohm
    39A
    RoHS Compliant
    Lead Free
    -
    3
    R-PSFM-T3
    Not Qualified
    -
    -
    -
    290 mJ
    -
    -
    -
    -
    -
    -
    104W
    IPP60R125P6XKSA1 vs IPP65R280C6XKSA1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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