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IPP60R099CPAAKSA1

Infineon Technologies IPP60R099CPAAKSA1

Part Number:
IPP60R099CPAAKSA1
Manufacturer:
Infineon Technologies
Ventron No:
2488407-IPP60R099CPAAKSA1
Description:
MOSFET N-CH 600V 31A TO-220
ECAD Model:
Datasheet:
IPP60R099CPAAKSA1

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Specifications
Infineon Technologies IPP60R099CPAAKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP60R099CPAAKSA1.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -40°C~150°C TJ
  • Packaging
    Tube
  • Series
    CoolMOS™
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    255W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    105m Ω @ 18A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 1.2mA
  • Input Capacitance (Ciss) (Max) @ Vds
    2800pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    31A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    80nC @ 10V
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    TO-220AB
  • Drain Current-Max (Abs) (ID)
    31A
  • Drain-source On Resistance-Max
    0.105Ohm
  • Pulsed Drain Current-Max (IDM)
    93A
  • DS Breakdown Voltage-Min
    600V
  • Avalanche Energy Rating (Eas)
    800 mJ
  • RoHS Status
    ROHS3 Compliant
Description
IPP60R099CPAAKSA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 800 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2800pF @ 100V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 31A.Peak drain current is 93A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 600V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPP60R099CPAAKSA1 Features
the avalanche energy rating (Eas) is 800 mJ
based on its rated peak drain current 93A.
a 600V drain to source voltage (Vdss)


IPP60R099CPAAKSA1 Applications
There are a lot of Infineon Technologies
IPP60R099CPAAKSA1 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IPP60R099CPAAKSA1 More Descriptions
Trans MOSFET N-CH 600V 31A Automotive 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:600V; Cont Current Id:31A; On State Resistance:0.099ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:3V; Case Style:TO-220; ;RoHS Compliant: Yes
Summary of Features: Worldwide best R ds,on in TO220; Ultra low gate charge; Extreme dv/dt rated; High peak current capability; Automotive AEC Q101 qualified; Green package (RoHS compliant); CoolMOS CPA is specially designed for:; DC/DC converters for Automotive Application
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(on):99mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:255W; Operating Temperature Range:-40°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:31A; Package / Case:TO-220; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IPP60R099CPAAKSA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Max Operating Temperature
    Min Operating Temperature
    Subcategory
    Power Dissipation
    Turn On Delay Time
    Halogen Free
    Rise Time
    Polarity/Channel Type
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    FET Technology
    Lead Free
    Number of Pins
    Supplier Device Package
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IPP60R099CPAAKSA1
    IPP60R099CPAAKSA1
    Infineon Technologies
    12 Weeks
    Through Hole
    TO-220-3
    NO
    SILICON
    -40°C~150°C TJ
    Tube
    CoolMOS™
    2009
    e3
    no
    Not For New Designs
    1 (Unlimited)
    3
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    3
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    255W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    105m Ω @ 18A, 10V
    3.5V @ 1.2mA
    2800pF @ 100V
    31A Tc
    80nC @ 10V
    600V
    10V
    ±20V
    TO-220AB
    31A
    0.105Ohm
    93A
    600V
    800 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPP60R099CPXKSA1
    IPP60R099CPXKSA1
    Infineon Technologies
    12 Weeks
    Through Hole
    TO-220-3
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    CoolMOS™
    2007
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    3
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    255W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    99m Ω @ 18A, 10V
    3.5V @ 1.2mA
    2800pF @ 100V
    31A Tc
    80nC @ 10V
    650V
    10V
    ±20V
    TO-220AB
    31A
    0.099Ohm
    93A
    600V
    800 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IPP60R099CPAAKSA1 vs IPP60R099CPXKSA1
  • IPP60R600E6
    IPP60R600E6
    Infineon Technologies
    -
    -
    TO-220
    -
    -
    -
    -
    -
    -
    -
    yes
    -
    -
    3
    -
    -
    SINGLE
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    -
    ENHANCEMENT MODE
    -
    SWITCHING
    -
    -
    -
    -
    -
    600V
    -
    -
    -
    -
    0.6Ohm
    -
    -
    -
    RoHS Compliant
    Through Hole
    150°C
    -55°C
    FET General Purpose Power
    63W
    10 ns
    Halogen Free
    8ns
    N-CHANNEL
    11 ns
    58 ns
    7.3A
    20V
    600V
    METAL-OXIDE SEMICONDUCTOR
    Lead Free
    -
    -
    -
    -
    -
    IPP60R099CPAAKSA1 vs IPP60R600E6
  • IPP65R125C7XKSA1
    IPP65R125C7XKSA1
    Infineon Technologies
    18 Weeks
    Through Hole
    TO-220-3
    -
    -
    -55°C~150°C TJ
    Tube
    CoolMOS™ C7
    2008
    -
    -
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    101W Tc
    -
    N-Channel
    -
    125mOhm @ 8.9A, 10V
    4V @ 440μA
    1670pF @ 400V
    18A Tc
    35nC @ 10V
    650V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Through Hole
    150°C
    -55°C
    -
    -
    14 ns
    Halogen Free
    15ns
    -
    8 ns
    71 ns
    18A
    20V
    650V
    -
    Lead Free
    3
    PG-TO220-3
    1.67nF
    110mOhm
    125 mΩ
    IPP60R099CPAAKSA1 vs IPP65R125C7XKSA1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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