Infineon Technologies IPP60R099C7XKSA1

Name: IPP60R099C7XKSA1
Brand: Infineon Technologies
SKU: 2848874-IPP60R099C7XKSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPP60R099C7XKSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2848874-IPP60R099C7XKSA1

Description:: MOSFET N-CH 600V 22A TO220-3

ECAD Model:

Datasheet:: IPP60R099C7XKSA1

Specifications

Infineon Technologies IPP60R099C7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP60R099C7XKSA1.

Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
CoolMOS™ C7
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
110W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
99m Ω @ 9.7A, 10V
Vgs(th) (Max) @ Id
4V @ 490μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
1819pF @ 400V
Current - Continuous Drain (Id) @ 25°C
22A Tc
Gate Charge (Qg) (Max) @ Vgs
42nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
22A
JEDEC-95 Code
TO-220AB
Max Dual Supply Voltage
600V
Drain-source On Resistance-Max
0.099Ohm
Pulsed Drain Current-Max (IDM)
83A
Avalanche Energy Rating (Eas)
97 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IPP60R099C7XKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 97 mJ.The maximum input capacitance of this device is 1819pF @ 400V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22A.There is no pulsed drain current maximum for this device based on its rated peak drain current 83A.With its 600V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.

IPP60R099C7XKSA1 Features
the avalanche energy rating (Eas) is 97 mJ
a continuous drain current (ID) of 22A
based on its rated peak drain current 83A.

IPP60R099C7XKSA1 Applications
There are a lot of Infineon Technologies
IPP60R099C7XKSA1 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

IPP60R099C7XKSA1 More Descriptions

Single N-Channel 600 V 99 mOhm 42 nC CoolMOS Power Mosfet - TO-220-3
Trans MOSFET N-CH 600V 22A 3-Pin(3 Tab) TO-220 Tube
Mosfet, N-Ch, 600V, 22A, 150Deg C, 110W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Infineon IPP60R099C7XKSA1
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

Product Comparison

The three parts on the right have similar specifications to IPP60R099C7XKSA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

JEDEC-95 Code

Max Dual Supply Voltage

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Max Operating Temperature

Min Operating Temperature

Subcategory

Pin Count

Qualification Status

Power Dissipation

Turn On Delay Time

Rise Time

Drain to Source Voltage (Vdss)

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

FET Technology

Number of Pins

Voltage - Rated DC

Current Rating

Element Configuration

Drain Current-Max (Abs) (ID)

Height

Length

Width

View Compare
IPP60R099C7XKSA1

Infineon Technologies

18 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

CoolMOS™ C7

2008

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

110W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

99m Ω @ 9.7A, 10V

4V @ 490μA

Halogen Free

1819pF @ 400V

22A Tc

42nC @ 10V

10V

±20V

22A

TO-220AB

600V

0.099Ohm

83A

97 mJ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPP60R450E6

Infineon Technologies

-

Through Hole

-

TO-220

-

-

-

-

-

-

yes

-

-

3

-

-

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

-

ENHANCEMENT MODE

-

-

SWITCHING

-

-

Halogen Free

-

-

-

-

-

9.2A

-

600V

0.45Ohm

26A

-

RoHS Compliant

Lead Free

150°C

-55°C

FET General Purpose Power

3

Not Qualified

74W

11 ns

9ns

600V

N-CHANNEL

10 ns

70 ns

20V

METAL-OXIDE SEMICONDUCTOR

-

-

-

-

-

-

-

-

IPP60R099C7XKSA1 vs IPP60R450E6
IPP60R125CPXKSA1

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

CoolMOS™

2007

e3

yes

Not For New Designs

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

-

1

SINGLE WITH BUILT-IN DIODE

208W Tc

ENHANCEMENT MODE

-

N-Channel

SWITCHING

125m Ω @ 16A, 10V

3.5V @ 1.1mA

Halogen Free

2500pF @ 100V

25A Tc

70nC @ 10V

10V

±20V

25A

TO-220AB

600V

-

82A

708 mJ

ROHS3 Compliant

Lead Free

-

-

-

3

Not Qualified

208W

15 ns

5ns

650V

-

-

50 ns

20V

-

3

600V

25A

-

-

-

-

-

IPP60R099C7XKSA1 vs IPP60R125CPXKSA1
IPP65R660CFDAAKSA1

Infineon Technologies

16 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-40°C~150°C TJ

Tube

Automotive, AEC-Q101, CoolMOS™

2008

e3

no

Obsolete

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

-

NOT SPECIFIED

NOT SPECIFIED

-

1

-

62.5W Tc

ENHANCEMENT MODE

-

N-Channel

SWITCHING

660m Ω @ 3.2A, 10V

4.5V @ 200μA

Halogen Free

543pF @ 100V

6A Tc

20nC @ 10V

10V

±20V

6A

TO-220AB

650V

0.66Ohm

-

-

RoHS Compliant

Contains Lead

-

-

-

-

-

62.5W

9 ns

8ns

-

-

10 ns

40 ns

20V

-

3

-

-

Single

6A

15.95mm

10.36mm

4.57mm

IPP60R099C7XKSA1 vs IPP65R660CFDAAKSA1

Certification

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IPP60R099C7XKSA1 Specification

Part Number	Manufacturers	Description	Stock	Price
IPP60R099C7XKSA1 DISTI #V99:2348_06377510	Infineon Technologies AG	Trans MOSFET N-CH 600V 22A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	1500	1 $5.7035 10 $4.366 100 $3.753 250 $3.525 500 $3.138
IPP60R099C7XKSA1 DISTI #V36:1790_06377510	Infineon Technologies AG	Trans MOSFET N-CH 600V 22A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	0	500 $4.46 5000 $4.235 50000 $2.946 250000 $2.314 500000 $2.309
IPP60R099C7XKSA1 DISTI #IPP60R099C7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 22A TO220-3 RoHS: Compliant	482	1 $5.49 10 $4.928 25 $4.6588 100 $4.0375 500 $3.43702 2500 $2.75376
IPP60R099C7XKSA1 DISTI #33725814	Infineon Technologies AG	Trans MOSFET N-CH 600V 22A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	1500	3 $5.7035
IPP60R099C7XKSA1 DISTI #33925793	Infineon Technologies AG	Trans MOSFET N-CH 600V 22A 3-Pin(3 Tab) TO-220 Tub RoHS: Compliant	500	500 $4.8594
IPP60R099C7XKSA1 DISTI #IPP60R099C7XKSA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Rail/Tube RoHS: Compliant	0	500 $2.79 1000 $2.69 2000 $2.59 3000 $2.49 5000 $2.49
IPP60R099C7XKSA1 DISTI #IPP60R099C7	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: IPP60R RoHS: Compliant	0	500 $2.817 1000 $2.73875 1500 $2.66473 2500 $2.59461 5000 $2.56091 12500 $2.52808 25000 $2.49608
IPP60R099C7XKSA1 DISTI #SP001298000	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: SP0012 RoHS: Compliant	0	1 $2.89 10 $2.69 25 $2.59 50 $2.49 100 $2.39 500 $2.29 1000 $2.09
IPP60R099C7XKSA1 DISTI #13AC9081	Infineon Technologies AG	MOSFET, N-CH, 600V, 22A, TO-220-3, Transistor Pol	0	1 $5.27 10 $4.47 25 $4.28 50 $4.08 100 $3.88 250 $3.68 500 $3.3
IPP60R099C7XKSA1 DISTI #	Infineon Technologies AG	Single N-Channel 600 V 99 mOhm 42 nC CoolMOS Power RoHS: Compliant	500	5 $4.96 25 $4.02 50 $3.84 100 $3.67 250 $3.46
IPP60R099C7XKSA1 DISTI #726-IPP60R099C7XKSA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	479	1 $5.22 10 $4.43 100 $3.84 250 $3.64 500 $3.27
IPP60R099C7XKSA1 DISTI #2726067	Infineon Technologies AG	MOSFET, N-CH, 600V, 22A, TO-220-3 RoHS: Compliant	0	1 $8.27 10 $7.43 25 $7.03 100 $6.09 500 $5.18 2500 $4.17
IPP60R099C7XKSA1 DISTI #2726067	Infineon Technologies AG	MOSFET, N-CH, 600V, 22A, TO-220-3	1490	1 $4.46 10 $3.41 100 $2.96 250 $2.81 500 $2.52
IPP60R099C7XKSA1 DISTI #XSFP00000050344	Infineon Technologies AG	RoHS: Compliant	1000	500 $7.09 1000 $6.61
IPP60R099C7XKSA1 DISTI #IPP60R099C7	Infineon Technologies AG	N-Ch 600V 22A 110W 0,099R TO220 RoHS: Compliant	0	1 $6.81 10 $3.81 50 $2.81 100 $2.58

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Infineon Technologies IPP60R099C7XKSA1

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