Infineon Technologies IPP110N20NA
- Part Number:
- IPP110N20NA
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479165-IPP110N20NA
- Description:
- MOSFET N-CH 200V 88A TO220-3
- ECAD Model:
-
- Datasheet:
- IPP110N20NA
Infineon Technologies IPP110N20NA technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPP110N20NA.
- Surface MountNO
- Number of Terminals3
- Transistor Element MaterialSILICON
- JESD-609 Codee3
- Pbfree Codeicon-pbfree no
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Terminal PositionSINGLE
- Terminal FormTHROUGH-HOLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Operating Temperature (Max)175°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeN-CHANNEL
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)88A
- Drain-source On Resistance-Max0.011Ohm
- Pulsed Drain Current-Max (IDM)352A
- DS Breakdown Voltage-Min200V
- Avalanche Energy Rating (Eas)560 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)300W
- RoHS StatusRoHS Compliant
IPP110N20NA Description
The IPP110N20NA is an N-channel Power MOSFET with performance-leading OptiMOS? benchmark technology. The Infineon IPP110N20NA is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS), and inverters. The operating and storage temperature is between -55 and 175??. The Infineon IPP110N20NA is in the TO-220-3 package with 300w.
IPP110N20NA Features
Lowest Qg and Qgd
World's lowest FOM, MSL 1 rated
Highest efficiency
Highest power density
Lowest board space consumption
Minimal device paralleling required
Environmentally friendly
Easy-to-design-in products
IPP110N20NA Applications
Synchronous rectification for AC-DC SMPS
Motor control for 48V¨C110V systems
Isolated DC-DC converters
Lighting for 110V AC networks
HID lamps
Class D audio amplifiers
Uninterruptable power supplies (UPS)
LED lighting power supply
The IPP110N20NA is an N-channel Power MOSFET with performance-leading OptiMOS? benchmark technology. The Infineon IPP110N20NA is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS), and inverters. The operating and storage temperature is between -55 and 175??. The Infineon IPP110N20NA is in the TO-220-3 package with 300w.
IPP110N20NA Features
Lowest Qg and Qgd
World's lowest FOM, MSL 1 rated
Highest efficiency
Highest power density
Lowest board space consumption
Minimal device paralleling required
Environmentally friendly
Easy-to-design-in products
IPP110N20NA Applications
Synchronous rectification for AC-DC SMPS
Motor control for 48V¨C110V systems
Isolated DC-DC converters
Lighting for 110V AC networks
HID lamps
Class D audio amplifiers
Uninterruptable power supplies (UPS)
LED lighting power supply
The three parts on the right have similar specifications to IPP110N20NA.
-
ImagePart NumberManufacturerSurface MountNumber of TerminalsTransistor Element MaterialJESD-609 CodePbfree CodeECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeOperating Temperature (Max)Number of ElementsConfigurationOperating ModeTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyPower Dissipation-Max (Abs)RoHS StatusMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyQualification StatusPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)MountNumber of PinsElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageSupplier Device PackageView Compare
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IPP110N20NANO3SILICONe3icon-pbfree noEAR99Matte Tin (Sn)FET General Purpose PowerSINGLETHROUGH-HOLENOT SPECIFIEDcompliantNOT SPECIFIED3R-PSFM-T3175°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHINGN-CHANNELTO-220AB88A0.011Ohm352A200V560 mJMETAL-OXIDE SEMICONDUCTOR300WRoHS Compliant---------------------------------- -
NO-SILICONe3-EAR99MATTE TINFET General Purpose PowerSINGLE-NOT SPECIFIEDcompliantNOT SPECIFIED3R-PSFM-T3-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING-TO-220AB50A0.0099Ohm200A30V57 mJ--RoHS CompliantThrough HoleTO-220-3-55°C~175°C TJTubeOptiMOS™2008Obsolete1 (Unlimited)3LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)Not Qualified58W TcN-Channel9.9m Ω @ 50A, 10V2V @ 20μA1639pF @ 15V50A Tc13nC @ 5V30V4.5V 10V±20V-----------
-
-----EAR99-------3--1------------RoHS CompliantThrough HoleTO-220-3-55°C~175°C TJTubeOptiMOS™2007Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-200W TcP-Channel4.3m Ω @ 80A, 10V2.1V @ 475μA9300pF @ 25V100A Tc200nC @ 10V30V4.5V 10V5V, -16VThrough Hole3Single200W45ns180 ns200 ns100A5V-30V-
-
-----------------------------ROHS3 CompliantThrough HoleTO-220-3-55°C~175°C TJTubeOptiMOS™-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-167W TcN-Channel3.2mOhm @ 100A, 10V4V @ 120μA13.15pF @ 25V120A Tc160nC @ 10V60V10V±20V----------PG-TO220-3-1
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