Infineon Technologies IPI16CN10N G

Name: IPI16CN10N G
Brand: Infineon Technologies
SKU: 2854189-IPI16CN10N G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPI16CN10N G

Manufacturer:: Infineon Technologies

Ventron No:: 2854189-IPI16CN10N G

Description:: MOSFET N-CH 100V 53A TO262-3

ECAD Model:

Datasheet:: IPI16CN10N G

Specifications

Infineon Technologies IPI16CN10N G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPI16CN10N G.

Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
OptiMOS™
Published
2008
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSIP-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
100W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16.2m Ω @ 53A, 10V
Vgs(th) (Max) @ Id
4V @ 61μA
Input Capacitance (Ciss) (Max) @ Vds
3220pF @ 50V
Current - Continuous Drain (Id) @ 25°C
53A Tc
Gate Charge (Qg) (Max) @ Vgs
48nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
53A
Drain-source On Resistance-Max
0.0162Ohm
Pulsed Drain Current-Max (IDM)
212A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
107 mJ
RoHS Status
RoHS Compliant

Description

IPI16CN10N G Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 107 mJ.A device's maximal input capacitance is 3220pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 53A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 212A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IPI16CN10N G Features
the avalanche energy rating (Eas) is 107 mJ
based on its rated peak drain current 212A.
a 100V drain to source voltage (Vdss)

IPI16CN10N G Applications
There are a lot of Infineon Technologies
IPI16CN10N G applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

Product Comparison

The three parts on the right have similar specifications to IPI16CN10N G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Pbfree Code

Mount

Additional Feature

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Lead Free

View Compare
IPI16CN10N G

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

NO

SILICON

-55°C~175°C TJ

Tube

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

compliant

NOT SPECIFIED

3

R-PSIP-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

100W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

16.2m Ω @ 53A, 10V

4V @ 61μA

3220pF @ 50V

53A Tc

48nC @ 10V

100V

10V

±20V

53A

0.0162Ohm

212A

100V

107 mJ

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IPI16CNE8N G

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

NO

SILICON

-55°C~175°C TJ

Tube

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

260

compliant

40

3

R-PSIP-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

100W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

16.5m Ω @ 53A, 10V

4V @ 61μA

3230pF @ 40V

53A Tc

48nC @ 10V

85V

10V

±20V

53A

0.0165Ohm

212A

85V

107 mJ

RoHS Compliant

yes

-

-

-

-

-

-

-

-

-

-

-

-

-

IPI16CN10N G vs IPI16CNE8N G
IPI11N03LA

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

SILICON

-55°C~175°C TJ

Tube

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

-

NOT SPECIFIED

-

NOT SPECIFIED

3

R-PSIP-T3

Not Qualified

1

-

52W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

11.5m Ω @ 30A, 10V

2V @ 20μA

1358pF @ 15V

30A Tc

11nC @ 5V

-

4.5V 10V

±20V

-

0.0115Ohm

210A

-

80 mJ

RoHS Compliant

-

Through Hole

LOGIC LEVEL COMPATIBLE

25V

30A

Single

52W

43ns

2.8 ns

20 ns

30A

20V

25V

Lead Free

IPI16CN10N G vs IPI11N03LA
IPI12CN10N G

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

NO

SILICON

-55°C~175°C TJ

Tube

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

3

EAR99

MATTE TIN

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

260

compliant

40

3

R-PSIP-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

125W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

12.9m Ω @ 67A, 10V

4V @ 83μA

4320pF @ 50V

67A Tc

65nC @ 10V

100V

10V

±20V

67A

0.0129Ohm

268A

100V

154 mJ

RoHS Compliant

-

-

FAST SWITCHING

-

-

-

-

-

-

-

-

-

-

-

IPI16CN10N G vs IPI12CN10N G